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Applied Physics Letters, ISSN 0003-6951, 01/2016, Volume 108, Issue 3, p. 33502
Low-temperature atomic layer deposition (ALD) was employed to deposit Al2O3 as a gate dielectric in amorphous In–Ga–Zn–O thin-film transistors fabricated at... 
NBTI DEGRADATION | ATOMIC LAYER DEPOSITION | PHYSICS, APPLIED
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 02/2018, Volume 81, pp. 244 - 251
In spite of 50 years of history, there is still no consensus on the basic physics of Negative Bias Temperature Instability. Two competing models,... 
HYDROGEN | PHYSICS, APPLIED | SUPERIOR NBTI | NBTI DEGRADATION | KINETICS | NANOSCIENCE & NANOTECHNOLOGY | GENERATION | MODEL | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2018, Volume 39, Issue 2, pp. 172 - 175
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 90, Issue 25, p. 253508
Generation lifetimes and interface state densities of n-type 4H-SiC metal oxide semiconductor (MOS) capacitors are characterized by using the pulsed MOS... 
NBTI DEGRADATION | PHYSICS, APPLIED
Journal Article
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2010, Volume 31, Issue 5, pp. 411 - 413
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 2008, Volume 55, Issue 11, pp. 3175 - 3183
Journal Article
IEEE TRANSACTIONS ON ELECTRON DEVICES, ISSN 0018-9383, 11/2018, Volume 65, Issue 11, pp. 4846 - 4853
A Monte Carlo SPICE framework is proposed to evaluate the impact of negative bias temperature instability (NBTI) variability on performance and static power... 
negative bias temperature instability (NBTI) variability | static power | BSIM-CMG | PHYSICS, APPLIED | static random access memory (SRAM) | FinFET | SPICE | DEGRADATION | time zero variability-NBTI correlation | subthreshold slope degradation | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Vacuum, ISSN 0042-207X, 10/2019, Volume 168, p. 108862
NbTi-(NbTi)C Fe-based composites are fabricated by diffusion reaction. The locally reinforced (NbTi)C cermet layer formed by carrying out the reaction of... 
Metal matrix composites | High hardness | (NbTi)C | Microstructure
Journal Article
Solid-State Electronics, ISSN 0038-1101, 12/2015, Volume 114, pp. 115 - 120
In this paper, the positive and negative bias temperature instability (P/NBTI) of complementary metal-oxide-semiconductor (CMOS) low-temperature poly-Si... 
PBTI | HfO 2 | LTPS-TFTs | Reliability | NBTI
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 08/2018, Volume 87, pp. 286 - 320
It is well-established that oxide defects adversely affect functionality and reliability of a wide range of microelectronic devices. In semiconductor-insulator... 
PBTI | DFT | Bias temperature instability | Charge transfer reactions | Charge trapping | RTN | NBTI | THIN-FILMS | PHYSICS, APPLIED | SUPERIOR NBTI | MOLECULAR-HYDROGEN | NANOSCIENCE & NANOTECHNOLOGY | FRANCK-CONDON FACTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | ELECTRON-TRANSFER | AMORPHOUS SILICA | 1ST-PRINCIPLES CALCULATIONS | OXYGEN VACANCIES | RANDOM TELEGRAPH SIGNALS
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 08/2008, Volume 104, Issue 4, p. 44512
A significant difference in the magnitude of the threshold voltage (V,) reduction achieved by lanthanum oxide (La2O3) incorporation in ultra-thin dielectrics... 
NBTI | PHYSICS, APPLIED | FILMS
Journal Article
SUPERLATTICES AND MICROSTRUCTURES, ISSN 0749-6036, 08/2018, Volume 120, pp. 561 - 568
Hydrogen atom dissociations at the gate/dielectric interface is known to be a degrading process in MOSFET devices. In this work we use molecular dynamics and... 
PHYSICS, CONDENSED MATTER | MOLECULAR-DYNAMICS | MOSFET aging | SILICON | REACTIVE FORCE-FIELD | ENERGETICS | NBTI | INFREQUENT EVENTS | RADIATION | HCI | NBTI DEGRADATION | SYSTEMS | SIMULATIONS | Proton diffusion | WATER
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2013, Volume 60, Issue 11, pp. 3645 - 3654
Journal Article
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