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Microelectronics Reliability, ISSN 0026-2714, 09/2018, Volume 88-90, pp. 965 - 968
.... In this work, Single-Event Transient effects on a dynamic comparator in 28 nm FDSOI CMOS technology are investigated... 
Dynamic comparator | Reliability analysis | Single-event transient | 28 nm FDSOI | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | 28 nm FDSOI | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Microelectronics Reliability, ISSN 0026-2714, 05/2018, Volume 84, pp. 20 - 25
... nm CMOS process ESD protection. We also conducted detailed studies on the mechanisms and geometry effects of this newly proposed structure via TCAD simulations and experimental validations... 
28 nm technology | Double snapback SCR | Electrostatic discharge | 28 nm technology | VOLTAGE | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Microwave Theory and Techniques, ISSN 0018-9480, 10/2013, Volume 61, Issue 10, pp. 3763 - 3773
An envelope-tracking (ET) CMOS power amplifier (PA) is fabricated using a 0.18- μm CMOS process. The module containing the supply modulator, the PA, and the output transformer is implemented on a printed circuit board... 
linear | efficient | power amplifier (PA) | Harmonic analysis | envelope tracking (ET) | CMOS | Linearity | Logic gates | handset | Capacitance | CMOS integrated circuits | Transistors | long-term evolution (LTE) | Periodic structures | NM CMOS | SUPPLY MODULATOR | ELIMINATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Research | Analysis | Power amplifiers | Complementary metal oxide semiconductors | Gates (Electronics)
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 06/2012, Volume 47, Issue 6, pp. 1394 - 1407
Journal Article
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, 09/2016, Volume 831, pp. 265 - 268
.... After exposure to 3 MeV protons till 1 Grad dose, the 65 nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents... 
3 MeV protons | Heavy ions | Total ionizing dose effect | 65 nm CMOS technology | INSTRUMENTS & INSTRUMENTATION | 3 MeV protons | SPECTROSCOPY | NUCLEAR SCIENCE & TECHNOLOGY | 65 nm CMOS technology | DEVICES | OXIDES | PHYSICS, PARTICLES & FIELDS
Journal Article
Optics express, ISSN 1094-4087, 2017, Volume 25, Issue 15, pp. 18165 - 18174
.... The highest Q value was 2.3 million, which represents a record for a nanocavity fabricated by complementary metal-oxide-semiconductor (CMOS... 
VISUALIZATION | WAFER | NM IMMERSION LITHOGRAPHY | PHOTOLITHOGRAPHY | DEFECT | MEMS | LEAKY COMPONENTS | OPTICS | DROP FILTER | RECEIVER
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 10/2010, Volume 45, Issue 10, pp. 2003 - 2007
This paper presents an ultra-low-loss 50-70 GHz single-pole double-throw (SPDT) switch built using a standard 90 nm CMOS process... 
Radio frequency | 90 nm CMOS | Switches | Insertion loss | Transmission line measurements | CMOS integrated circuits | SPDT switch | Transistors | millimeter-wave | Switching circuits | TRANSMITTER | DESIGN | RECEIVER | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | Noise levels | Transmission lines | Circuits | Inductors | Standards | Shunts
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 10/2012, Volume 47, Issue 10, pp. 2372 - 2384
We present a 2.4-GHz asymmetric multilevel outphasing (AMO) power amplifier (PA) with class-E branch amplifiers and discrete supply modulators integrated in a 65-nm CMOS process... 
Digital predistortion | Phase measurement | power amplifier (PA) | Modulation | Linearity | discrete supply modulator | Vectors | CMOS integrated circuits | Distortion measurement | Power generation | linear amplification with nonlinear components (LINC) | outphasing | NM CMOS | EFFICIENCY | ENGINEERING, ELECTRICAL & ELECTRONIC | Envelopes | CMOS | Asymmetry | Power amplifiers | Multilevel | Amplifiers | Modulators
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2008, Volume 55, Issue 1, pp. 96 - 130
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 07/2016, Volume 51, Issue 7, pp. 1547 - 1565
Journal Article
Progress in Electromagnetics Research, ISSN 1070-4698, 2018, Volume 161, pp. 57 - 85
This paper reviews recent advances in the design of low noise amplifier (LNA) in complementary metal oxide semiconductor (CMOS... 
TRANSCEIVER | NM CMOS | PHYSICS, APPLIED | ENHANCEMENT | OPTIMIZATION | GAIN LNA | TELECOMMUNICATIONS | LINEARITY | TECHNOLOGY | FEEDBACK | RECEIVER FRONT-END | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Analog Integrated Circuits and Signal Processing, ISSN 0925-1030, 1/2019, Volume 98, Issue 1, pp. 155 - 167
Journal Article
IEEE journal of solid-state circuits, ISSN 1558-173X, 2018, Volume 53, Issue 8, pp. 2151 - 2163
Journal Article
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