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Proceedings of the IEEE, ISSN 0018-9219, 01/2019, Volume 107, Issue 1, pp. 49 - 62
In recent years, the negative capacitance effect in ferroelectric (FE) materials has attracted significant attention from many researchers around the world.... 
Ferroelectric | Ferroelectric materials | Magnetic separation | negative capacitance | Capacitors | Switches | Capacitance | Transistors | Magnetic tunneling | transistors | MV/DECADE | FIELD | PFETS | MODEL | PROSPECTS | ENGINEERING, ELECTRICAL & ELECTRONIC | Ferroelectricity | Semiconductor devices | Dipoles | Energy dissipation | S curves | Crystal structure
Journal Article
IEEE Journal of the Electron Devices Society, ISSN 2168-6734, 2018, Volume 6, Issue 1, pp. 910 - 921
In this paper, approaches to obtain the sub- kT/q non-hysteretic operation mode in negative capacitance (NC) field-effect-transistors for a wide band of... 
MOSFET | Landau-Khalatnikov equation | Shape | Capacitance-voltage characteristics | non-hysteretic | Logic gates | NCFETs | Capacitance | Iron | capacitance matching | Negative capacitance | THICKNESS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 05/2014, Volume 2, Issue 18, pp. 6540 - 6548
In this paper we synthesize well aligned Ni-Co sulfide nanowire arrays (NWAs) with a Ni-Co molar ratio of 1 : 1 on 3D nickel foam by a facile two-step... 
IN-SITU GROWTH | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRODES | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSTRUCTURES | CATHODIC DEPOSITION | HIGH-PERFORMANCE SUPERCAPACITORS | XPS | ELECTROCHEMICAL ENERGY-STORAGE | SOL-GEL PROCESS | NANOSHEET ARRAYS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2016, Volume 63, Issue 11, pp. 4416 - 4422
We present a simulation study of the negative capacitance effect incorporating leakage through the ferroelectric (FE) negative capacitor. The dynamics of the... 
Radio frequency | negative capacitance FET (NCFET) | negative capacitance | Capacitors | Logic gates | sub-60 mV/decade | Capacitance | Iron | Ferroelectric (FE) | Mathematical model | FIELD-EFFECT TRANSISTOR | ROOM-TEMPERATURE | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Usage | Mathematical models | Research | Ferroelectric crystals
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2018, Volume 39, Issue 2, pp. 272 - 275
Journal Article
Advanced Functional Materials, ISSN 1616-301X, 12/2016, Volume 26, Issue 47, pp. 8643 - 8649
To further reduce the power dissipation in nanoscale transistors, the fundamental limit posed by the Boltzmann distribution of electrons has to be overcome.... 
hafnium oxide | ferroelectrics | negative capacitance | polycrystalline | PHYSICS, CONDENSED MATTER | VOLTAGE | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | Thin films | Perovskite | Capacitors | Analysis | Epitaxy | Integrated circuit fabrication | Dielectric films | Transistors
Journal Article
Nano Letters, ISSN 1530-6984, 07/2014, Volume 14, Issue 7, pp. 3864 - 3868
Effective negative capacitance has been postulated in ferroelectrics because there is a hysteresis in plots of polarization-electric field. Compelling... 
ferroelectric | Negative capacitance | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SUPERLATTICES | BaTiO3 | MATERIALS SCIENCE, MULTIDISCIPLINARY | SrTiO3 | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | Slopes | Ferroelectric materials | Capacitance | Stacks | Barium titanates | Nanostructure | MOSFETs | Hysteresis
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 06/2018, Volume 10, Issue 23, pp. 19812 - 19819
Negative capacitance transistors are a unique class of switches capable of operation beyond the Boltzmann limit to realize subthermionic switching. To date,... 
ferroelectric | subthreshold slope | negative capacitance | field effect transistors | tantalum oxide | solid electrolyte | zinc oxide | MATERIALS SCIENCE, MULTIDISCIPLINARY | BARRIER | NANOSCIENCE & NANOTECHNOLOGY | TAOX | MV/DECADE | INTERFACE | DIFFUSION
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2017, Volume 38, Issue 10, pp. 1500 - 1503
Correlation of gate capacitance CG with drive current IDS and transconductance G m in negative capacitance (NC) Ge pFETs is first investigated. Hysteresis-free... 
ferroelectric | Annealing | subthreshold swing | FET | Field effect transistors | Logic gates | Capacitance | germanium | Voltage control | Transconductance | transistor | Negative capacitance | Ge | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 622 - 625
We report the investigation of negative differential resistance (NDR) in negative capacitance (NC) germanium (Ge) pFETs. The NDR in NC transistors is... 
Resistance | Couplings | ferroelectric | FET | Field effect transistors | negative differential resistance | Logic gates | Capacitance | Hysteresis | Negative capacitance | PERFORMANCE IMPROVEMENT | GE PFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2017, Volume 38, Issue 9, pp. 1328 - 1330
The emergence of negative capacitance as a way to limit power dissipation in CMOS logic transistors has raised the question of response delay of ferroelectric... 
Capacitors | simulation | hafnium oxide | polarization response | Ferroelectric | negative capacitance | Logic gates | Capacitance | Delays | Hafnium compounds | Mathematical model | Transistors | kinetic inductance | HYSTERESIS | FERROELECTRIC CAPACITOR | DEVICES | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2016, Volume 63, Issue 5, pp. 2043 - 2049
In this paper, we revisit the theory of negative capacitance in: 1) a standalone ferroelectric; 2) a ferroelectric-dielectric; and 3) a... 
MOSFET | Electric potential | Ferroelectric | Gibbs free energy | negative capacitance | Capacitors | Logic gates | Capacitance | steep slope | Hysteresis | hysteresis | Metal oxide semiconductor field effect transistors | Usage | Research | Gates (Electronics)
Journal Article