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Materials Today, ISSN 1369-7021, 06/2016, Volume 19, Issue 5, pp. 254 - 264
Non-volatile memory (NVM) will play a decisive role in the development of the next-generation of electronic products. Therefore, the development of... 
ELECTROLYTE-BASED RERAM | HFO2-BASED RRAM | INDIUM-TIN-OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | THIN-FILM TRANSISTORS | RESISTIVE SWITCHING CHARACTERISTICS | DEVICES | NONVOLATILE MEMORY | CO2 FLUID TREATMENT | CONDUCTIVE FILAMENTS | METAL-OXIDES | Electrical engineering | Energy conservation | Flash memory | Electric properties
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 12/2010, Volume 98, Issue 12, pp. 2237 - 2251
Journal Article
2014, International series on advances in solid state electronics and technology, ISBN 9789814460903, xxxiii, 274
Book
Semiconductor Science and Technology, ISSN 0268-1242, 10/2016, Volume 31, Issue 11, p. 113001
We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the... 
CBRAM | resistive memory | ionic memory | SOLID-ELECTROLYTE | PHYSICS, CONDENSED MATTER | SINGLE | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILVER | NONVOLATILE MEMORY | RESISTIVE SWITCHING MEMORY | METALLIC FILAMENT | ENGINEERING, ELECTRICAL & ELECTRONIC | FILMS | GROWTH | CHARGE-TRANSFER
Journal Article
by Pan, F and Gao, S and Chen, C and Song, C and Zeng, F
Materials Science & Engineering R, ISSN 0927-796X, 09/2014, Volume 83, Issue 1, pp. 1 - 59
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 1/2020, pp. 1 - 13
Magnetoresistive random access memory (MRAM) is regarded as a reliable persistent memory technology because of its long data retention and robust endurance.... 
Magnetic tunnel junction (MTJ) | spin-orbit torque (SOT) | magnetoresistive random access memory (MRAM) | spin-transfer torque (STT) | nonvolatile memory
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 09/2017, Volume 105, Issue 9, pp. 1770 - 1789
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2019, Volume 40, Issue 5, pp. 722 - 725
With the increase of the tunneling leakage current resulting from the downscaling of transistor size, cache memory based on semiconductor technologies, i.e.,... 
Frequency modulation | cache | Random access memory | Logic gates | Micromagnetics | Skyrmion | Current density | SRAM | Energy barrier | Magnetic tunneling | nonvolatile memory | ENGINEERING, ELECTRICAL & ELECTRONIC | Static random access memory | Energy consumption | Particle theory | Semiconductor devices | Energy dissipation | Leakage current | Transistors | Hypothetical particles
Journal Article
ACS Nano, ISSN 1936-0851, 05/2010, Volume 4, Issue 5, pp. 2655 - 2658
In this study, a NiO RRAM nanocapacitor array was fabricated on a graphene sheet, which was on a Nb-doped SrTiO3 substrate containing terraces with a regular... 
Nanocapacitor | Graphene | NiO | Resistive switching | Anodizing aluminum oxide | OXIDE | HIGH-DENSITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | nanocapacitor | NANOSCIENCE & NANOTECHNOLOGY | NONVOLATILE MEMORY | NANOSTRUCTURES | resistive switching | CHEMISTRY, MULTIDISCIPLINARY | graphene | FILMS | ANODIZATION | SRTIO3 | FABRICATION | SWITCH | anodizing aluminum oxide
Journal Article