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ACS Nano, ISSN 1936-0851, 06/2016, Volume 10, Issue 6, pp. 6392 - 6399
With the decrease of the dimensions of electronic devices, the role played by electrical contacts is ever increasing, eventually coming to dominate the overall device volume and total resistance... 
Research Support, U.S. Gov't, Non-P.H.S | ohmic contacts | Research Support, Non-U.S. Gov't | edge contacts | transition-metal dichalcogenides | heterostructure | graphene | Journal Article | TRANSPORT-PROPERTIES | MOLYBDENUM-DISULFIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | BARRIER | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MONO LAYER | TRANSISTORS | HIGH-MOBILITY | MONOLAYER | ELECTRICAL CONTACTS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 2014, Volume 29, Issue 5, p. 54006
To realize nanocarbons in general and carbon nanotube (CNT) in particular as on-chip interconnect materials, the contact resistance stemming from the metal-CNT interface must be well understood and minimized... 
metal | interface | nanotube | resistance | contact | FOCUSED ELECTRON-BEAM | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CURRENT-CARRYING CAPACITY | INTERCONNECT | OHMIC CONTACTS | ENGINEERING, ELECTRICAL & ELECTRONIC | CARBON NANOTUBE DEVICES | TRANSPORT | BEAM-INDUCED DEPOSITION | INTEGRATION
Journal Article
ACS Nano, ISSN 1936-0851, 05/2016, Volume 10, Issue 5, pp. 4895 - 4919
Journal Article
Journal of Materials Chemistry C, ISSN 2050-7526, 6/2018, Volume 6, Issue 23, pp. 6153 - 6163
Journal Article
Journal of materials chemistry. C, Materials for optical and electronic devices, ISSN 2050-7526, 2018, Volume 6, Issue 23, pp. 6153 - 6163
.... Furthermore, a lateral n-type Schottky contact is formed when contacting with Au in the a direction and Sc in both directions, while a lateral p-type Schottky contact is formed with Au in the b... 
Journal Article
Chemical Society reviews, ISSN 0306-0012, 5/2018, Volume 47, Issue 9, pp. 337 - 358
.... Contacts are the communication links between these 2D materials and the three-dimensional world for probing and harnessing their exquisite electronic properties... 
Interlayers | Layered materials | Two dimensional materials | Ohmic
Journal Article
Nano Letters, ISSN 1530-6984, 05/2018, Volume 18, Issue 5, pp. 2766 - 2771
Journal Article
Materials Today, ISSN 1369-7021, 03/2015, Volume 18, Issue 2, pp. 79 - 96
.... Recent efforts in lowering contact resistance have led to significantly improved field-effect mobility of OFETs, up to 100 times higher, as the results of careful choice of contact materials... 
HIGH-PERFORMANCE | INTERFACE DIPOLE | GRAPHENE OXIDE ELECTRODES | SELF-ASSEMBLED MONOLAYERS | HOLE-INJECTION | MATERIALS SCIENCE, MULTIDISCIPLINARY | METAL WORK FUNCTION | THIN-FILM TRANSISTORS | ENERGY-LEVEL ALIGNMENT | GATE VOLTAGE | CHARGE INJECTION | Circuit components | Field-effect transistors
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2014, Volume 104, Issue 11, p. 112101
Experimental evidence of reduction of ultrathin TiO2 by Ti is presented and its effect on Fermi level depinning and contact resistivity reduction to Si is experimentally studied... 
PHYSICS, APPLIED | Interlayers | Ohmic | Contact resistance | Insulators | Substrates | Reduction (metal working) | Reduction | Fermi level | Electrical resistivity | Correlation analysis | Barriers | Titanium | Silicon | Titanium dioxide
Journal Article
physica status solidi (a), ISSN 1862-6300, 08/2017, Volume 214, Issue 8, pp. 1600842 - n/a
Due to the ultra‐wide bandgap of Al‐rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve... 
AlN | ohmic contacts | heterostructures | band gap | AlGaN | METALLIZATIONS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | REGROWTH | MATERIALS SCIENCE, MULTIDISCIPLINARY | TI/AL/NI/AU | TI/AL/MO/AU | FET | GAN | RESISTANCE | HEMTS | Annealing | Ohmic | Aluminum | Ultrawideband | Metallizing | Contact resistance | Etching | Low resistance | Electrical resistivity | Titanium | Stacks | Nickel | Aluminum gallium nitrides | Heterostructures | MATERIALS SCIENCE
Journal Article
Journal of physical chemistry. C, ISSN 1932-7447, 04/2019, Volume 123, Issue 14, pp. 8923 - 8931
...) Bi2O2Se in contact with six metals (Sc, Ti, Ag, Au, Pd, and Pt) that cover a wide work function range by density functional theory-based band structure calculations and quantum transport simulations in a FET configuration... 
MOBILITY | SEMICONDUCTORS | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | THERMOELECTRIC PROPERTIES | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | LEVEL | SCHOTTKY BARRIERS | INITIO MOLECULAR-DYNAMICS | ARSENENE | TRANSPORT | ELECTRICAL CONTACTS
Journal Article