Optica Pura y Aplicada, ISSN 0030-3917, 2015, Volume 48, Issue 4, pp. 283 - 289
Journal Article
Optical Engineering, ISSN 0091-3286, 11/2004, Volume 43, Issue 11, pp. 2495 - 2496
Journal Article
01/2006, Halbleiter-Elektronik, ISBN 3540234373, Volume Bd23, 1
Das Buch beschreibt die Konzepte siliziumbasierter MOS-Bauelemente für Logikanwendungen (CMOS), Speicheranwendungen (DRAM, SRAM, EEPROM) und...
Silicon-on-insulator technology | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors
Silicon-on-insulator technology | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors
eBook
2005, 1. Aufl., Halbleiter-Elektronik, ISBN 3540234373, Volume 23, 442
Das Buch beschreibt die Konzepte siliziumbasierter MOS-Bauelemente für Logikanwendungen (CMOS), Speicheranwendungen (DRAM, SRAM, EEPROM) und...
Silicon-on-insulator technology | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors | Electronics and Microelectronics, Instrumentation | Optical and Electronic Materials | Engineering | Computer Hardware
Silicon-on-insulator technology | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors | Electronics and Microelectronics, Instrumentation | Optical and Electronic Materials | Engineering | Computer Hardware
eBook
Die vorliegende Arbeit behandelt integrierte Hochvolt-Schaltungen für die Ansteuerung elektrostatisch arbeitender Mikroaktoren und Mikroaktorarrays. Im...
Hochvolt-Elektronik | Silicon On Insulator | Ansteuerung | Mikroaktorarray | Hysteresis Puls Width Modulation | Torsionsspiegel | Aktor | Puls Width Modulation | Level-Shifter | Integrierte Schaltung | Systemintegration | Hochvolt-Verstärker | ddc:620
Hochvolt-Elektronik | Silicon On Insulator | Ansteuerung | Mikroaktorarray | Hysteresis Puls Width Modulation | Torsionsspiegel | Aktor | Puls Width Modulation | Level-Shifter | Integrierte Schaltung | Systemintegration | Hochvolt-Verstärker | ddc:620
Dissertation
In dieser Arbeit wird eine neue Methode und ein neuartiges FET -Sensorelement zum Nachweis von Flüssigkeitsbewegungen vorgestellt, das zudem bei Bedarf auch...
Tropfenkoaleszenz | ISFET | rvk:ZN 4870 | Feldeffekttransistor | hydrophobe Oberflächen | Emulsions | SOI | Emulsionen | Mikrofluidik | FET | Silicon-on-Insulator | Field-Effect-Transistor | Lab on a Chip | hydrophobic surfaces | ddc:530 | Microfluidics | Droplet Coalescence | Sensor
Tropfenkoaleszenz | ISFET | rvk:ZN 4870 | Feldeffekttransistor | hydrophobe Oberflächen | Emulsions | SOI | Emulsionen | Mikrofluidik | FET | Silicon-on-Insulator | Field-Effect-Transistor | Lab on a Chip | hydrophobic surfaces | ddc:530 | Microfluidics | Droplet Coalescence | Sensor
Dissertation
Esta pesquisa engloba o estudo e desenvolvimento de novas heteroestruturas semicondutoras, tomando como base as estruturas SOI (Silicon-On-Insulator - sil cio...
Ion implantation | Materiais | "Smart-cut" technology | Heteroestruturas semicondutoras | Thermal annealed | Microeletr nica | Plasma enhanced chemical vapor deposition (PECVD) | SiCOI (Silicon Carbide-On-Insulator) semiconductor heterostructures | SOI (Silicon-On-Insulator) structures | Silicon carbide (SiC)
Ion implantation | Materiais | "Smart-cut" technology | Heteroestruturas semicondutoras | Thermal annealed | Microeletr nica | Plasma enhanced chemical vapor deposition (PECVD) | SiCOI (Silicon Carbide-On-Insulator) semiconductor heterostructures | SOI (Silicon-On-Insulator) structures | Silicon carbide (SiC)
Dissertation
Journal of Lightwave Technology, ISSN 0733-8724, 02/2017, Volume 35, Issue 4, pp. 639 - 649
The high index contrast silicon-on-insulator platform is the dominant CMOS compatible platform for photonic integration. The successful use of silicon photonic...
Silicon compounds | Absorption | silicon-on-insulator | silicon nitride | Photonic integration | Silicon photonics | Indexes | Optical waveguides | silicon photonics | ON-INSULATOR PLATFORM | OPTICAL COHERENCE TOMOGRAPHY | CONCAVE GRATING DEMULTIPLEXER | VISIBLE WAVELENGTHS | NANOPHOTONIC WAVE-GUIDES | SUPERCONTINUUM GENERATION | FREQUENCY COMB GENERATION | TELECOMMUNICATIONS | MICRORING RESONATORS | ENGINEERING, ELECTRICAL & ELECTRONIC | silicon-on insulator | I-N PHOTODETECTOR | EVANESCENT EXCITATION | OPTICS
Silicon compounds | Absorption | silicon-on-insulator | silicon nitride | Photonic integration | Silicon photonics | Indexes | Optical waveguides | silicon photonics | ON-INSULATOR PLATFORM | OPTICAL COHERENCE TOMOGRAPHY | CONCAVE GRATING DEMULTIPLEXER | VISIBLE WAVELENGTHS | NANOPHOTONIC WAVE-GUIDES | SUPERCONTINUUM GENERATION | FREQUENCY COMB GENERATION | TELECOMMUNICATIONS | MICRORING RESONATORS | ENGINEERING, ELECTRICAL & ELECTRONIC | silicon-on insulator | I-N PHOTODETECTOR | EVANESCENT EXCITATION | OPTICS
Journal Article
Proceedings of the IEEE, ISSN 0018-9219, 06/2017, Volume 105, Issue 6, pp. 1087 - 1104
This paper reviews the technology requirements of future 100-300-GHz millimeter-wave (mm-wave) systems-on-chip (SOI) for high data rate wireless and sensor...
transimpedance amplifier (TIA) | MOSFET | Millimeter wave devices | partially depleted silicon-on-insulator (PD-SOI) | radio transceiver | benchmark circuit | VCO | Terahertz materials | Electronics | Silicon germanium | SiGe heterojunction bipolar transistor (HBT) | Radio frequency | fiber-optic transceiver | metal-oxide-semiconductor field-effect transistor (MOSFET) | Heterojunction bipolar transistors | Optical fiber devices | Silicon-on-insulator | Analog-to-digital converter (ADC) | digital-to-analog converter (DAC) | fully depleted silicon-on-insulator (FD-SOI) | noise figure | driver | ultrathin body and bulk (UTBB) FD-SOI | power added efficiency (PAE) | Logic gates | millimeter wave (mm-wave) | silicon-on-insulator complementary metal-oxide-semiconductor (SOI-CMOS) | track and hold amplifier (THA) | Noise figure | Fiber-optic transceiver | Driver | Track and hold amplifier (THA) | Benchmark circuit | Millimeter wave (mm-wave) | Ultrathin body and bulk (UTBB) FD-SOI | Metal-oxide-semiconductor field-effect transistor (MOSFET) | Silicon-on-insulator complementary metal-oxide-semiconductor (SOI-CMOS) | Partially depleted silicon-on-insulator (PD-SOI) | Power added efficiency (PAE) | Transimpedance amplifier (TIA) | Fully depleted silicon-on-insulator (FD-SOI) | Radio transceiver | Digital-to-analog converter (DAC) | metal oxide semiconductor field-effect transistor (MOSFET) | ENGINEERING, ELECTRICAL & ELECTRONIC | silicon-on-insulator complementary metal oxide semiconductor (SOI-CMOS) | Optical fibers | Digital to analog conversion | Bipolar transistors | Semiconductor devices | Computer simulation | Field effect transistors | Analog circuits | Benchmarks | Fiber optics | Digital to analog converters | CMOS | Wireless communications | Terahertz frequencies | Power amplifiers | Bandwidth | Scaling | Silicon | Transistors | Computer aided design | Energy conversion efficiency
transimpedance amplifier (TIA) | MOSFET | Millimeter wave devices | partially depleted silicon-on-insulator (PD-SOI) | radio transceiver | benchmark circuit | VCO | Terahertz materials | Electronics | Silicon germanium | SiGe heterojunction bipolar transistor (HBT) | Radio frequency | fiber-optic transceiver | metal-oxide-semiconductor field-effect transistor (MOSFET) | Heterojunction bipolar transistors | Optical fiber devices | Silicon-on-insulator | Analog-to-digital converter (ADC) | digital-to-analog converter (DAC) | fully depleted silicon-on-insulator (FD-SOI) | noise figure | driver | ultrathin body and bulk (UTBB) FD-SOI | power added efficiency (PAE) | Logic gates | millimeter wave (mm-wave) | silicon-on-insulator complementary metal-oxide-semiconductor (SOI-CMOS) | track and hold amplifier (THA) | Noise figure | Fiber-optic transceiver | Driver | Track and hold amplifier (THA) | Benchmark circuit | Millimeter wave (mm-wave) | Ultrathin body and bulk (UTBB) FD-SOI | Metal-oxide-semiconductor field-effect transistor (MOSFET) | Silicon-on-insulator complementary metal-oxide-semiconductor (SOI-CMOS) | Partially depleted silicon-on-insulator (PD-SOI) | Power added efficiency (PAE) | Transimpedance amplifier (TIA) | Fully depleted silicon-on-insulator (FD-SOI) | Radio transceiver | Digital-to-analog converter (DAC) | metal oxide semiconductor field-effect transistor (MOSFET) | ENGINEERING, ELECTRICAL & ELECTRONIC | silicon-on-insulator complementary metal oxide semiconductor (SOI-CMOS) | Optical fibers | Digital to analog conversion | Bipolar transistors | Semiconductor devices | Computer simulation | Field effect transistors | Analog circuits | Benchmarks | Fiber optics | Digital to analog converters | CMOS | Wireless communications | Terahertz frequencies | Power amplifiers | Bandwidth | Scaling | Silicon | Transistors | Computer aided design | Energy conversion efficiency
Journal Article
2002, EMIS processing series, ISBN 0852960395, Volume no. 27, xxv, 149
Book
Laser & Photonics Reviews, ISSN 1863-8880, 11/2014, Volume 8, Issue 6, pp. L93 - L97
Grating couplers are key elements enabling the coupling of light between planar waveguide circuits and optical fibers. In this work, it is demonstrated using...
Integrated optics | fiber–chip grating coupler | subwavelength grating (SWG) | silicon‐on‐insulator (SOI) | Silicon-on-insulator (SOI) | Fiber-chip grating coupler | Subwavelength grating (SWG) | fiber-chip grating coupler | FIBER | COMPACT | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SILICON-ON-INSULATOR | OPTICS | silicon-on-insulator (SOI)
Integrated optics | fiber–chip grating coupler | subwavelength grating (SWG) | silicon‐on‐insulator (SOI) | Silicon-on-insulator (SOI) | Fiber-chip grating coupler | Subwavelength grating (SWG) | fiber-chip grating coupler | FIBER | COMPACT | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SILICON-ON-INSULATOR | OPTICS | silicon-on-insulator (SOI)
Journal Article
12.
Full Text
Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2008, Volume 55, Issue 1, pp. 21 - 39
An effective way to reduce supply voltage and resulting power consumption without losing the circuit performance of CMOS is to use CMOS structures using high...
Performance evaluation | Power demand | mobility | III-V semiconductor | Materials | effective mass | surface orientation | subband engineering | velocity | multigate MOSFET | strained Si | MOSFETs | Ge-on-insulator (GOI) | uniaxial strain | Logic gates | supply voltage | Silicon | Density-of-states (DOS) | CMOS integrated circuits | Multigate MOSFET | Supply voltage | Surface orientation | Mobility | Uniaxial strain | Strained Si | Subband engineering | Effective mass | Velocity | PHYSICS, APPLIED | density-of-states (DOS) | ELECTRON-MOBILITY ENHANCEMENT | GE-CONDENSATION TECHNIQUE | FIELD-EFFECT TRANSISTORS | INVERSION-LAYER CAPACITANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | ON-INSULATOR PMOSFETS | STRAINED-SILICON | TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS | MONTE-CARLO SIMULATION | Ge-on-insulator (GOT) | QUASI-BALLISTIC TRANSPORT | SI MOSFETS | Measurement | Metal oxide semiconductor field effect transistors | Analysis | Voltage | Design and construction | Scaling laws (Statistical physics) | Comparative analysis | Semiconductors | CMOS | Electric potential | Devices | Carrier density | Channels | Silicon germanides
Performance evaluation | Power demand | mobility | III-V semiconductor | Materials | effective mass | surface orientation | subband engineering | velocity | multigate MOSFET | strained Si | MOSFETs | Ge-on-insulator (GOI) | uniaxial strain | Logic gates | supply voltage | Silicon | Density-of-states (DOS) | CMOS integrated circuits | Multigate MOSFET | Supply voltage | Surface orientation | Mobility | Uniaxial strain | Strained Si | Subband engineering | Effective mass | Velocity | PHYSICS, APPLIED | density-of-states (DOS) | ELECTRON-MOBILITY ENHANCEMENT | GE-CONDENSATION TECHNIQUE | FIELD-EFFECT TRANSISTORS | INVERSION-LAYER CAPACITANCE | ENGINEERING, ELECTRICAL & ELECTRONIC | ON-INSULATOR PMOSFETS | STRAINED-SILICON | TECHNOLOGICALLY SIGNIFICANT SEMICONDUCTORS | MONTE-CARLO SIMULATION | Ge-on-insulator (GOT) | QUASI-BALLISTIC TRANSPORT | SI MOSFETS | Measurement | Metal oxide semiconductor field effect transistors | Analysis | Voltage | Design and construction | Scaling laws (Statistical physics) | Comparative analysis | Semiconductors | CMOS | Electric potential | Devices | Carrier density | Channels | Silicon germanides
Journal Article
1995, Electronic materials : science and technology, ISBN 9780792395485, Volume SECS 305., xiv, 381
Book
2000, Selected topics in electronics and systems, ISBN 9810242808, Volume 15., ix, 176
Book
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 286 - 291
Feedback field-effect transistor (FBFET), an alternative switching device, has received attention due to its ideal steep switching feature. By utilizing the...
Performance evaluation | Field effect transistors | Silicon-on-insulator | Switches | Logic gates | feedback field-effect transistor (FBFET) | Channel length variation | Threshold voltage | gate switching and margin rate | Energy barrier | silicon on insulator (SOI) | VOLTAGE | PHYSICS, APPLIED | OPERATION | gate switching and margin rate silicon on insulator (SOI) | FINFET | NEGATIVE CAPACITANCE | feedback fieldeffect transistor (FBFET) | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | Semiconductor devices | Silicon | Transistors | Positive feedback | Switching
Performance evaluation | Field effect transistors | Silicon-on-insulator | Switches | Logic gates | feedback field-effect transistor (FBFET) | Channel length variation | Threshold voltage | gate switching and margin rate | Energy barrier | silicon on insulator (SOI) | VOLTAGE | PHYSICS, APPLIED | OPERATION | gate switching and margin rate silicon on insulator (SOI) | FINFET | NEGATIVE CAPACITANCE | feedback fieldeffect transistor (FBFET) | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS | Semiconductor devices | Silicon | Transistors | Positive feedback | Switching
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 02/2008, Volume 20, Issue 4, pp. 309 - 311
We present measurement results of an ultracompact four-channel silicon-on-insulator planar concave grating demultiplexer fabricated in a complimentary...
diffraction | Crosstalk | Etching | Optical waveguides | silicon-on-insulator (SOI) | Optical arrays | Bragg gratings | Silicon on insulator technology | Demultiplexing | grating | Insertion loss | Optical materials | Distributed Bragg reflectors | distributed Bragg reflector (DBR) | Arrayed waveguide gratings | Silicon-on-insulator (SOI) | Diffraction | Grating | Distributed Bragg reflector (DBR) | PHYSICS, APPLIED | demultiplexing | SILICON-ON-INSULATOR | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Noise levels | Bragg reflectors | Demultiplexers | Lithography | Footprints | Channels | Photonics
diffraction | Crosstalk | Etching | Optical waveguides | silicon-on-insulator (SOI) | Optical arrays | Bragg gratings | Silicon on insulator technology | Demultiplexing | grating | Insertion loss | Optical materials | Distributed Bragg reflectors | distributed Bragg reflector (DBR) | Arrayed waveguide gratings | Silicon-on-insulator (SOI) | Diffraction | Grating | Distributed Bragg reflector (DBR) | PHYSICS, APPLIED | demultiplexing | SILICON-ON-INSULATOR | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Noise levels | Bragg reflectors | Demultiplexers | Lithography | Footprints | Channels | Photonics
Journal Article
IEEE Microwave and Wireless Components Letters, ISSN 1531-1309, 07/2018, Volume 28, Issue 7, pp. 597 - 599
We present a charge-based compact model for induced gate thermal noise for a fully depleted silicon-on-insulator transistor. The model uses front- and...
Computational modeling | high frequency | induced gate noise | Silicon-on-insulator | fully depleted silicon on insulator (FDSOI) | ultrathin body with thin box (UTBB) | Semiconductor device modeling | Analytical models | power spectral density (PSD) | ultrathin body silicon on insulator | Logic gates | noise | Data models | Thermal noise | Compact model | TRANSISTORS | SOI MOSFETS | CHANNEL NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC
Computational modeling | high frequency | induced gate noise | Silicon-on-insulator | fully depleted silicon on insulator (FDSOI) | ultrathin body with thin box (UTBB) | Semiconductor device modeling | Analytical models | power spectral density (PSD) | ultrathin body silicon on insulator | Logic gates | noise | Data models | Thermal noise | Compact model | TRANSISTORS | SOI MOSFETS | CHANNEL NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 03/2019, Volume 66, Issue 3, pp. 1145 - 1152
Leakage phenomena are increasingly affecting the performance of nanoelectronic devices, and therefore, advanced device simulators need to include them in an...
Electric potential | double-gate silicon on insulator (DGSOI) | multissubband ensemble Monte Carlo (MS-EMC) | gate leakage current | Silicon-on-insulator | FinFET | fully depleted silicon on insulator (FDSOI) | direct source-to-drain tunneling (S/D tunneling) | Electron traps | Monte Carlo methods | Tunneling | Logic gates | FinFETs | Band-to-band tunneling (BTBT) | TRANSISTORS | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Computer simulation | Current leakage | Nanotechnology devices | Silicon | Simulators | Devices | Gates | Nanoelectronics
Electric potential | double-gate silicon on insulator (DGSOI) | multissubband ensemble Monte Carlo (MS-EMC) | gate leakage current | Silicon-on-insulator | FinFET | fully depleted silicon on insulator (FDSOI) | direct source-to-drain tunneling (S/D tunneling) | Electron traps | Monte Carlo methods | Tunneling | Logic gates | FinFETs | Band-to-band tunneling (BTBT) | TRANSISTORS | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Computer simulation | Current leakage | Nanotechnology devices | Silicon | Simulators | Devices | Gates | Nanoelectronics
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2018, Volume 65, Issue 9, pp. 3862 - 3868
Collector-emitter voltage ( {V}_{\textsf {CE}} ) plateau of the 500-V deep-oxide trench...
Insulated gate bipolar transistors | Electric potential | vertical field plate | Breakdown voltage (BV) | silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) | Silicon-on-insulator | US Department of Transportation | Integrated circuit modeling | Load modeling | Periodic structures | deep-oxide trench (DOT) | E off)">turn-off loss (E off) | silicon-on-insulator lateral insulated gate | Silicon | Stability | Depletion | Emitters
Insulated gate bipolar transistors | Electric potential | vertical field plate | Breakdown voltage (BV) | silicon-on-insulator lateral insulated gate bipolar transistor (SOI-LIGBT) | Silicon-on-insulator | US Department of Transportation | Integrated circuit modeling | Load modeling | Periodic structures | deep-oxide trench (DOT) | E off)">turn-off loss (
Journal Article
Journal of Lightwave Technology, ISSN 0733-8724, 12/2011, Volume 29, Issue 24, pp. 3693 - 3704
A major issue in the fabrication of integrated Bragg grating (IBG) filters in highly confined waveguides is the average effective index fluctuations caused by...
Integrated optics | Optical filters | Silicon on insulator technology | Bragg gratings | weak grating approximation | silicon-on-insulator | Bragg grating | Surface roughness | photonic wires | optical filter | sidewall roughness | integrated optics | ON-INSULATOR | MODEL | SURFACE-ROUGHNESS | ENGINEERING, ELECTRICAL & ELECTRONIC | REDUCTION | WAVE-GUIDES | LINE-EDGE ROUGHNESS | FABRICATION | OPTICS | Studies | Gratings (spectra) | Spectral response | Roughness | Diffraction gratings | Mathematical models | Cost analysis | Cost engineering
Integrated optics | Optical filters | Silicon on insulator technology | Bragg gratings | weak grating approximation | silicon-on-insulator | Bragg grating | Surface roughness | photonic wires | optical filter | sidewall roughness | integrated optics | ON-INSULATOR | MODEL | SURFACE-ROUGHNESS | ENGINEERING, ELECTRICAL & ELECTRONIC | REDUCTION | WAVE-GUIDES | LINE-EDGE ROUGHNESS | FABRICATION | OPTICS | Studies | Gratings (spectra) | Spectral response | Roughness | Diffraction gratings | Mathematical models | Cost analysis | Cost engineering
Journal Article
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