X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (1504) 1504
Newspaper Article (273) 273
Conference Proceeding (175) 175
Publication (61) 61
Dissertation (37) 37
Newsletter (36) 36
Book Chapter (12) 12
Book Review (6) 6
Magazine Article (4) 4
Book / eBook (2) 2
Paper (1) 1
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
physics, applied (704) 704
random access memory (540) 540
materials science, multidisciplinary (499) 499
switching (480) 480
rram (454) 454
electrodes (451) 451
engineering, electrical & electronic (349) 349
devices (338) 338
nanoscience & nanotechnology (319) 319
metal oxides (309) 309
hafnium oxide (305) 305
resistance (293) 293
memory (280) 280
resistive switching (266) 266
switches (252) 252
physics, condensed matter (248) 248
memory devices (244) 244
oxide (237) 237
thin films (195) 195
nonvolatile memory (184) 184
inventors (175) 175
oxides (167) 167
films (164) 164
filaments (142) 142
spannung (132) 132
chemistry, multidisciplinary (131) 131
electric potential (131) 131
chemistry, physical (129) 129
resistive random access memory (129) 129
thin-films (127) 127
zinc oxide (126) 126
voltage (121) 121
direktzugriffsspeicher (119) 119
elektrode (113) 113
sauerstoff (113) 113
analysis (112) 112
endurance (105) 105
oxygen (105) 105
aluminum oxide (104) 104
semiconductors (100) 100
transistors (100) 100
mechanism (96) 96
nanotechnology (96) 96
data storage (95) 95
graphene (95) 95
mechanisms (94) 94
memristors (91) 91
materials science (90) 90
electric properties (89) 89
vacancies (86) 86
physics (85) 85
memristor (83) 83
oxid (83) 83
silicon (83) 83
patents (81) 81
hafnium compounds (79) 79
indium tin oxide (79) 79
speichereinheit (78) 78
nichtflüchtiger speicher (74) 74
random-access memory (74) 74
multidisciplinary sciences (73) 73
device (72) 72
oxidation (72) 72
characterization and evaluation of materials (71) 71
dielectric films (70) 70
dünnfilm (70) 70
nanostructure (70) 70
tin (70) 70
optical and electronic materials (69) 69
titanium dioxide (68) 68
computer memory (66) 66
schaltverhalten (65) 65
temperature (65) 65
aluminum (64) 64
platinum (64) 64
resistive memory (64) 64
schaltcharakteristik (64) 64
arrays (63) 63
titanium (62) 62
complementary metal oxide semiconductors (61) 61
index medicus (61) 61
condensed matter physics (60) 60
usage (60) 60
transition (59) 59
dielectrics (58) 58
behavior (57) 57
model (57) 57
reram (57) 57
titanium oxides (56) 56
electronics (55) 55
manufacturing (55) 55
resistive switching memory (55) 55
electric fields (54) 54
computer simulation (53) 53
copper (53) 53
defects (53) 53
low resistance (53) 53
annealing (51) 51
article (50) 50
research (49) 49
more...
Language Language
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 1172 - 1182
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2012, Volume 59, Issue 4, pp. 1183 - 1188
Journal Article
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2012, Volume 59, Issue 9, pp. 2461 - 2467
Journal Article
physica status solidi (a), ISSN 1862-6300, 12/2017, Volume 214, Issue 12, pp. 1700570 - n/a
Accurate control over the various resistance states is highly desired in order to attain reliable multilevel memory performance. However, due to the inherent... 
low‐power operation | multilevel resistive switching | variability | nanocrystals | low-power operation | TAOX | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | EVOLUTION | MEMORY | HFOX | MATERIALS SCIENCE, MULTIDISCIPLINARY | Titanium oxides | Nanocrystals | Power consumption | Vacancies | Random access memory | Multilevel | Titanium dioxide
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2015, Volume 62, Issue 12, pp. 4022 - 4028
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2011, Volume 58, Issue 12, pp. 4309 - 4317
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2019, Volume 40, Issue 2, pp. 341 - 344
Journal Article
Solid State Electronics, ISSN 0038-1101, 12/2018, Volume 150, pp. 60 - 65
•RRAM using Cu/α-IGZO/p+-Si stack was fabricated and measured.•Proposed device shows the self-rectifying phenomenon.•Proposed device shows the gradual... 
Gradual switching | Resistive-switching random-access memory | Synaptic device | Self-rectification | Amorphous indium gallium zinc oxide | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | FILM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 06/2014, Volume 61, Issue 6, pp. 2158 - 2163
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2017, Volume 64, Issue 8, pp. 3145 - 3150
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2019, Volume 66, Issue 1, pp. 777 - 784
Journal Article
Journal Article
physica status solidi (a), ISSN 1862-6300, 02/2018, Volume 215, Issue 3, pp. 1700440 - n/a
The incorporation of metal nanocrystals (NCs) within TiO2‐x thin films offers great advantages for adjusting a wide range of non‐volatile memory properties,... 
oxygen ion reservoir | nanocrystals |