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2011, ISBN 9780521516846, xvii, 470
"Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in... 
Metal oxide semiconductors | Design and construction | Electron transport | Nanoelectronics
Book
Nature, ISSN 0028-0836, 11/2011, Volume 479, Issue 7373, pp. 310 - 316
For more than four decades, transistors have been shrinking exponentially in size, and therefore the number of transistors in a single microelectronic chip has... 
MOSFET | VOLTAGE | DESIGN | SOI | MULTIDISCIPLINARY SCIENCES | Metal oxide semiconductor field effect transistors | Product development | Forecasts and trends | Microelectronics | Miniature electronic equipment | Degradation | Semiconductor devices | Chips | Transistors | Packing density | Devices | MOSFETs
Journal Article
2006, 1. Aufl., ISBN 9780470855416, xxiii, 303
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As... 
Mathematical models | Metal oxide semiconductor field-effect transistors | Metal oxide semiconductors
Book
Advanced Materials, ISSN 0935-9648, 05/2009, Volume 21, Issue 20, pp. 2007 - 2022
Journal Article
2019, ISBN 3039210106
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power... 
MOSFET | n/a | total ionizing dose (TID) | low power consumption | process simulation | two-dimensional material | negative-capacitance | power consumption | technology computer aided design (TCAD) | thin-film transistors (TFTs) | band-to-band tunneling (BTBT) | nanowires | inversion channel | metal oxide semiconductor field effect transistor (MOSFET) | spike-timing-dependent plasticity (STDP) | field effect transistor | segregation | systematic variations | Sentaurus TCAD | indium selenide | nanosheets | technology computer-aided design (TCAD) | high-? dielectric | subthreshold bias range | statistical variations | fin field effect transistor (FinFET) | compact models | non-equilibrium Green’s function | etching simulation | highly miniaturized transistor structure | compact model | silicon nanowire | surface potential | Silicon-Germanium source/drain (SiGe S/D) | nanowire | plasma-aided molecular beam epitaxy (MBE) | phonon scattering | mobility | silicon-on-insulator | drain engineered | device simulation | variability | semi-floating gate | synaptic transistor | neuromorphic system | theoretical model | CMOS | ferroelectrics | tunnel field-effect transistor (TFET) | SiGe | metal gate granularity | buried channel | ON-state | bulk NMOS devices | ambipolar | piezoelectrics | tunnel field effect transistor (TFET) | FinFETs | polarization | field-effect transistor | line edge roughness | random discrete dopants | radiation hardened by design (RHBD) | low energy | flux calculation | doping incorporation | low voltage | topography simulation | MOS devices | low-frequency noise | high-k | layout | level set | process variations | subthreshold | metal gate stack | electrostatic discharge (ESD)
eBook
Journal of the American Chemical Society, ISSN 0002-7863, 07/2013, Volume 135, Issue 29, pp. 10729 - 10741
In oxide semiconductors, such as those based on indium zinc oxide (IXZO), a strong oxygen binding metal ion (“oxygen getter”), X, functions to control O... 
N-CHANNEL | THIN-FILM TRANSISTORS | OXIDE SEMICONDUCTOR A-INGAZNO4-X | SOL-GEL | HIGH-MOBILITY | CHEMISTRY, MULTIDISCIPLINARY | CARBON NANOTUBES | LATTICE ENERGIES | INDIUM OXIDE | ELECTRONIC-STRUCTURE | METAL-OXIDES | Thermal properties | Usage | Diffraction | Field-effect transistors | Innovations | X-rays | Zinc oxide | Chemical properties | Photoelectron spectroscopy | Methods
Journal Article