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Thin Solid Films, ISSN 0040-6090, 04/2019, Volume 675, pp. 16 - 22
Effects of post deposition annealing (PDA) atmosphere, including oxygen (O ) gas and forming gas (FG), on interfacial and electrical properties of a HfO gate... 
HfO | Electrical properties | Ge interface | Post deposition annealing ambient | Metal oxide semiconductor devices | Interfacial properties | Ge
Journal Article
1982, ISBN 0470274212, vii, 186
Book
Applied Physics Letters, ISSN 0003-6951, 07/2017, Volume 111, Issue 5, p. 53501
A Ge metal-oxide-semiconductor capacitor with a composite gate dielectric composed of a ZrON/TaON multilayer and a Si passivation layer treated with fluorine... 
THIN-FILMS | ARXPS | PHYSICS, APPLIED | GERMANIUM | SURFACE PASSIVATION | OXIDE-SEMICONDUCTOR DEVICES | XPS | RELIABILITY
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 12/2011, Volume 110, Issue 11, p. 114504
Scaled layers of HfO2 on LaGeOx on Ge grown by molecular beam deposition and their electrical properties and passivation are discussed. The interfacial LaGeOx... 
INTERFACE | PHYSICS, APPLIED | OXIDE-SEMICONDUCTOR DEVICES
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2006, Volume 53, Issue 5, pp. 1010 - 1020
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1706 - 1730
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 07/2016, Volume 95, pp. 24 - 32
In this paper, an analytical model for evaluation of tunneling current density of ultra thin MOS devices is presented. The impacts of the promising high-k... 
MOS | Quantum tunneling | Tunneling probability | Image force | Tunneling resistivity | High-k | IMAGE-FORCE | PHYSICS, CONDENSED MATTER | OXIDE-SEMICONDUCTOR DEVICES | LAYER
Journal Article
Journal Article
Progress in Materials Science, ISSN 0079-6425, 2011, Volume 56, Issue 5, pp. 475 - 572
Journal Article
Journal Article
1973, [1st ed.]., ISBN 0080169686, Volume 4., xi, 285
Book
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2012, Volume 101, Issue 24, p. 241606
Capacitance-voltage measurements of Pd/atomic layer deposited Al2O3/GaN metal oxide semiconductor capacitors performed over a temperature range of 77 K-500K... 
CONTACTS | PHYSICS, APPLIED | MOS DEVICES | SCHOTTKY | BORDER TRAPS | OXIDE-SEMICONDUCTOR DEVICES | N-TYPE GAN | P-TYPE GAN | Semiconductors | Gallium nitrides | Pyroelectric effect | Palladium | Devices | Density | Aluminum oxide | Defects
Journal Article
1986, Kluwer international series in engineering and computer science. VLSI, computer architecture, and digital signal processing., ISBN 9780898382242, xv, 344
Book
IEEE transactions on electron devices, ISSN 0018-9383, 05/2016, Volume 63, Issue 5, pp. 1814 - 1820
In this paper, we show that the subthreshold current-voltage characteristic can be used for estimating the interface trap density as a function of the energy... 
TCAD simulations | fully depleted symmetric metal-oxide-semiconductor devices | subthreshold regime | high current levels | EWI-27011 | METIS-316924 | FinFET | interface trap density estimation | IR-100408 | traps | FinFETs | current | Complementary MOSFETs (CMOSFETs) | MOS devices
Journal Article