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1. Full Text Terahertz range surface-wave bragg resonators with optimized ratio between ohmic and radiative losses
by Malkin, Andrey M and Demchenko, P and Ginzburg, N.S and Fil'Chenkov, S.E and Sergeev, A.S and Zaslavsky, V.Yu
EPJ Web of Conferences, ISSN 2101-6275, 11/2018, Volume 195, p. 6021
Ohmic
Conference Proceeding
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2. Full Text Publisher Correction: Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies
by Kotadiya, Naresh B and Lu, Hao and Mondal, Anirban and Ie, Yutaka and Andrienko, Denis and Blom, Paul W M and Wetzelaer, Gert-Jan A H
Nature materials, ISSN 1476-1122, 06/2018, Volume 17, Issue 6, pp. 563 - 563
In the html version of this Article originally published, Paul W. M. Blom and Gert-Jan A. H. Wetzelaer were incorrectly listed as Paul M. W. Blom and Gert-Jan... 
Ohmic | Organic semiconductors | Ionization
Journal Article
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3. Full Text Correction: Geobacter sulfurreducens pili support ohmic electronic conduction in aqueous solution
by Ing, Nicole L and Nusca, Tyler D and Hochbaum, Allon I
Physical Chemistry Chemical Physics : PCCP, ISSN 1463-9076, 1/2018, Volume 2, Issue 2, pp. 1294 - 1294
Correction for ' Geobacter sulfurreducens pili support ohmic electronic conduction in aqueous solution' by Nicole L. Ing et al. , Phys. Chem. Chem. Phys. ,... 
Aqueous solutions | Ohmic | Uranium
Journal Article
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4. An introduction to the event-related potential technique
by Luck, Stephen J
2005, Cognitive neuroscience, ISBN 9780262621960, x, 374
Evoked potentials (Electrophysiology)
Book
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5. Full Text Low-Resistance 2D/2D Ohmic Contacts: A Universal Approach to High-Performance WSe 2 , MoS 2 , and MoSe 2 Transistors
by Chuang, Hsun-Jen and Chamlagain, Bhim and Koehler, Michael and Perera, Meeghage Madusanka and Yan, Jiaqiang and Mandrus, David and Tománek, David and Zhou, Zhixian
Nano Letters, ISSN 1530-6984, 03/2016, Volume 16, Issue 3, pp. 1896 - 1902
MoS | MoSe | ohmic contact | two-dimensional | WSe | field-effect transistor
Journal Article
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6. ( e^sup 2^/h ) Conductance Plateau without 1D Chiral Majorana Fermions
by Wenjie Ji and Xiao-Gang Wen
Physical Review Letters, ISSN 0031-9007, 03/2018, Volume 120, Issue 10, p. 107002
We address the question about the origin of the ...(e2/h) conductance plateau observed in a recent experiment on an integer quantum Hall (IQH) film covered by... 
Resistance | Ohmic | Fermions | Electric contacts
Journal Article
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7. Full Text p -ZnO/ n -GaN heterostructure ZnO light-emitting diodes
by Hwang, Dae-Kue and Kang, Soon-Hyung and Lim, Jae-Hong and Yang, Eun-Jeong and Oh, Jin-Yong and Yang, Jin-Ho and Park, Seong-Ju
Applied Physics Letters, ISSN 0003-6951, 05/2005, Volume 86, Issue 22, pp. 222101 - 222101-3
We report on the characteristics of a ZnO light-emitting diode (LED) comprised of a heterostructure of p -ZnO/ n -GaN. The LED structure consisted of a... 
PHYSICS, APPLIED | FABRICATION | FILMS | OHMIC CONTACTS
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8. Full Text InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and f of 370 GHz
by Yuanzheng Yue and Zongyang Hu and Jia Guo and Sensale-Rodriguez, B and Guowang Li and Ronghua Wang and Faria, F and Tian Fang and Bo Song and Xiang Gao and Shiping Guo and Kosel, T and Snider, G and Fay, P and Jena, D and Huili Xing
IEEE Electron Device Letters, ISSN 0741-3106, 07/2012, Volume 33, Issue 7, pp. 988 - 990
We report 30-nm-gate-length InAlN/AlN/GaN/SiC high-electron-mobility transistors (HEMTs) with a record current gain cutoff frequency ( fT ) of 370 GHz. The... 
molecular beam epitaxy (MBE) | cutoff frequency | f_{T} | AlN | InAlN | MODFETs | Gallium nitride | Delay | high-electron-mobility transistor (HEMT) | regrown ohmic contacts | GaN | HEMTs | Logic gates | Ohmic contacts | transistor | INALN/GAN HEMTS | f(T) | ENGINEERING, ELECTRICAL & ELECTRONIC
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9. Full Text A magnesium/amorphous silicon passivating contact for n-type crystalline silicon solar cells
by Wan, Yimao and Samundsett, Chris and Yan, Di and Allen, Thomas and Peng, Jun and Cui, Jie and Zhang, Xinyu and Bullock, James and Cuevas, Andres
Applied Physics Letters, ISSN 0003-6951, 09/2016, Volume 109, Issue 11, p. 113901
Among the metals, magnesium has one of the lowest work functions, with a value of 3.7 eV. This makes it very suitable to form an electron-conductive cathode... 
PHYSICS, APPLIED | EFFICIENCY | SI | OHMIC CONTACT
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10. Full Text Low resistance high reflectance contacts to p-GaN using oxidized Ni/Au and Al or Ag
by Hibbard, D.L and Jung, S.P and Wang, C and Ullery, D and Zhao, Y.S and Lee, H.P and So, W and Liu, H
Applied Physics Letters, ISSN 0003-6951, 07/2003, Volume 83, Issue 2, pp. 311 - 313
We report on a high reflectance low resistance multilayer contact to p-GaN composed of a thin oxidized Ni/Au bilayer overcoated with a thick Al or Ag layer and... 
PHYSICS, APPLIED | OHMIC CONTACTS
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11. Erratum: “The role of contact size on the formation of Schottky barriers and ohmic contacts at nanoscale metal-semiconductor interfaces” [J. Appl. Phys. 111(6), 064302 (2012)]
by Kraya R A and Kraya L Y
Journal of Applied Physics, ISSN 0021-8979, 08/2014, Volume 116, Issue 7
Ohmic | Contact resistance
Journal Article
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12. Full Text Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p -type GaN
by Chhajed, Sameer and Lee, Wonseok and Cho, Jaehee and Schubert, E. Fred and Kim, Jong Kyu
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 7, p. 71102
We report on a self-organized nanoscale patterning method by using oblique angle deposition to enhance the light extraction in a GaInN light-emitting diode... 
OHMIC CONTACT FORMATION | SAPPHIRE | PHYSICS, APPLIED | EFFICIENCY
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13. Full Text Micron-Scale Annealing for Ohmic Contact Formation Applied in GaN HEMT Gate-First Technology
by Liu, Zhikun and Chen, Dingbo and Wan, Lijun and Li, Guoqiang
IEEE Electron Device Letters, ISSN 0741-3106, 12/2018, Volume 39, Issue 12, pp. 1896 - 1899
High-temperature thermal annealing process for ohmic contact hinders the development of monolithic integration of heterogeneous functional devices as well as... 
Electrodes | ohmic contact | Annealing | gate-first approach | Logic gates | HEMTs | Tin | Micron-scale annealing | Ohmic contacts | Gallium nitride | GaN HEMT | NITROGEN | DIFFUSION | ENGINEERING, ELECTRICAL & ELECTRONIC | Ohmic | Gallium nitrides | Current leakage | Electron mobility | Contact resistance | High temperature | Transistors | Gates
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14. Full Text AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology
by Hyung-Seok Lee and Dong Seup Lee and Palacios, T
IEEE Electron Device Letters, ISSN 0741-3106, 05/2011, Volume 32, Issue 5, pp. 623 - 625
This letter reports undoped AlGaN/GaN high-electron-mobility transistors (HEMTs) fabricated with a Si-CMOS-compatible technology based on Ti/Al/W ohmic and... 
high-electron-mobility transistor (HEMT) | ohmic contact | Gold | Metallization | recess etch | GaN | HEMTs | Ohmic contacts | Gallium nitride | MODFETs | Aluminum gallium nitride | 2-D electron gas (2DEG) | ENGINEERING, ELECTRICAL & ELECTRONIC | Electric potential | Ohmic | Semiconductor devices | Gallium nitrides | Recesses | Aluminum gallium nitrides | High electron mobility transistors
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15. Full Text Metal deposition and stripping under self-supported conditions: Experiment and simulation
by Guo, Yanjun and Yang, Minjun and Batchelor-McAuley, Christopher and Compton, Richard G
Journal of Electroanalytical Chemistry, ISSN 1572-6657, 09/2019, Volume 849, p. 113370
To what extent does the mass-transport to and from an electrochemical interface change when the dimensions of the electrode are comparable to the Debye length... 
Ohmic-drop | Stripping voltammetry | Electroneutrality | Migration
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16. Full Text Supercapacitive microbial desalination cells: New class of power generating devices for reduction of salinity content
by Santoro, Carlo and Abad, Fernando Benito and Serov, Alexey and Kodali, Mounika and Howe, Kerry J and Soavi, Francesca and Atanassov, Plamen
Applied Energy, ISSN 0306-2619, 12/2017, Volume 208, pp. 25 - 36
Supercapacitive Microbial Desalination Cell is here presented with unprecedented performances. Anode and cathode act as negative and positive electrode of an... 
Supercapacitive Microbial Desalination Cell (SC-MDC) | Power/current pulses | High power generation | Transport phenomena | Additional Electrode (AdE) | WASTE-WATER TREATMENT | ENERGY & FUELS | PERFORMANCE | FUEL-CELLS | REVERSE ELECTRODIALYSIS | NANOFILTRATION MEMBRANES | OF-THE-ART | ENGINEERING, CHEMICAL | SEAWATER DESALINATION | MEMBRANE CAPACITIVE DEIONIZATION | ENERGY RECOVERY | CATHODE CATALYST | Drug resistance in microorganisms | Capacitors | Fuel cells | Aquatic resources | Saline water conversion | Electric power production | Sea-water | Salinity | Vmax, practical voltage | current pulses | EDLC, electrochemical double layer capacitor | trest, rest time | Canode, anode capacitance | GLV, galvanostatic discharges | ΔVohmic, difference between Vmax,OC and Vmax, ohmic drop | AEM, anion exchange membrane | PGM-free, platinum group metals-free | SHE, standard hydrogen electrode | Ccathode, cathode capacitance | V+, oc, cathode potential in open circuit | RA, anodic anode ohmic resistance | Epulse, energy obtained by the pulse | tpulse, time of the pulse | CDI, capacitive deionization | OCV, open circuit voltage | DI, deionized water | Ppulse, power obtained by the pulse | RO, reverse osmosis | SC-MDC-AdE, supercapacitive microbial desalination cell with additional electrode | Cell ESR, equivalent series resistance of the cell | NaCl, sodium chloride | MDC, microbial desalination cell | ORR, oxygen reduction reaction | SC, solution conductivity | DC, desalination chamber | Vmax, OC, original maximum voltage in open circuit condition | AC, activated carbon | PTFE, polytetrafluoroethylene | SC-MDC, supercapacitive microbial desalination cell | Ccell, cell capacitance | CB, carbon black | RC, cathodeic ohmic resistance | MDC, membrane capacitive deionization | NaOAc, sodium acetate | SC-MFC, supercapacitive microbial fuel cell | V−, oc, anode potentials in open circuit | CEM, cation exchange membrane | AdE, additional electrode | Fe-AAPyr, iron aminoantypirine | MFC, microbial fuel cell | ΔVcapacitive, difference between Vmax and Vfinal (at the end of tpulse), voltage capacitive decrease drop | ΔVohmic, cathode, cathode ohmic drop | BES, bioelectrochemical system | ipulse, , current pulses | KCl, potassium chloride | KPB, potassium phosphate buffer | Power | Pmax, maximum power
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17. Full Text Eliminating degradation in solid oxide electrochemical cells by reversible operation
by Graves, Christopher and Ebbesen, Sune Dalgaard and Jensen, Søren Højgaard and Simonsen, Søren Bredmose and Mogensen, Mogens Bjerg
Nature Materials, ISSN 1476-1122, 2015, Volume 14, Issue 2, pp. 239 - 244
One promising energy storage technology is the solid oxide electrochemical cell (SOC), which can both store electricity as chemical fuels (electrolysis mode)... 
PHYSICS, CONDENSED MATTER | OXYGEN-ELECTRODE DELAMINATION | PHYSICS, APPLIED | MECHANISM | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | FUEL-CELL | SOFCS | POLARIZATION | FAILURE | Degradation | Ohmic | Electrolysis | Electricity | High current | Oxides | Density | Electrochemical cells | Energy storage
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18. Full Text Influence of Al Doping Concentration and Annealing Parameters on TiAl Based Ohmic Contacts on 4H-SiC
by Bauer, Anton and Rommel, Mathias and Erlbacher, Tobias and Kocher, Matthias
Materials Science Forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 393 - 396
TLM structures on Al-implanted regions with different implanted Al concentrations and different annealing temperatures were processed and characterized by... 
4H SiC | Ohmic contact | Ti/Al ohmic contacts | Modeling | Ti3SiC2 | Ohmic | Contact resistance
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19. Full Text Comparison of different ultrasound assisted extraction techniques for pectin from tomato processing waste
by Sengar, Animesh Singh and Rawson, Ashish and Muthiah, Manimekalai and Kumar Kalakandan, Suresh
Ultrasonics Sonochemistry, ISSN 1350-4177, 09/2019, p. 104812
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20. Full Text Dynamics of Geometric Measure of Quantum Discord of Two Qubits in Independent Reservoirs
by Liu, Longjiang and Zhang, Jiang and Cheng, Song and Tong, Dianmin
J Phys Soc Jpn, ISSN 0031-9015, 6/2013, Volume 82, Issue 6, pp. 064002 - 064002-6
We study the dynamics of geometric measure of quantum discord. The model under consideration is a physical system of two qubits coupled with two independent... 
Frozen phenomenon | Dynamics | Sub- ohmic reservoirs | Super-ohmic reservoirs | Time-invariant phenomenon | Ohmic reservoirs | Geometric measure of quantum discord | time-invariant phenomenon | dynamics | STATES | super-Ohmic reservoirs | PHYSICS, MULTIDISCIPLINARY | frozen phenomenon | geometric measure of quantum discord | sub-Ohmic reservoirs
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