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Nano Energy, ISSN 2211-2855, 10/2015, Volume 17, pp. 171 - 179
We present efficient perovskite solar cells using a mesoscopic TiO 2 /Al 2 O 3 /NiO/carbon structure as framework. The CH 3 NH 3 PbI 3 -based device with... 
Solar cell | Perovskite | Selective contact | Interface | P-i-N junction
Journal Article
NEW CARBON MATERIALS, ISSN 1007-8827, 10/2018, Volume 33, Issue 5, pp. 476 - 480
Carbon nanotube p-n junction diodes are expected to be the building block of next generation integrated circuits. A p-i-n junction diode was prepared from a... 
p-i-n junction diode | Locally chemical doping | MATERIALS SCIENCE, MULTIDISCIPLINARY | Rectification characteristic | SWCNT
Journal Article
by Liu, Q and Miao, J and Xu, Z.D and Meng, K.K and Xu, X.G and Wu, Y and Jiang, Y
Chemical Physics Letters, ISSN 0009-2614, 04/2019, pp. 68 - 73
All perovskite p-i-n junction La Sr MnO /PbZr Ti O /La Te MnO heterostructures were epitaxially deposited on (0 0 1) SrTiO substrates. Crystallinities and... 
Ferroelectric | Small polarons | P-i-n junction
Journal Article
Nature Photonics, ISSN 1749-4885, 05/2011, Volume 5, Issue 5, pp. 297 - 300
Efficient, low-threshold and compact semiconductor laser sources are under investigation for many applications in highspeed communications, information... 
PHYSICS, APPLIED | OPTICS | Optical interconnects | Nanocomposites | Thresholds | Lasers | P-i-n junctions | Quantum dots | Nanomaterials | Nanostructure
Journal Article
Optics Express, ISSN 1094-4087, 02/2018, Volume 26, Issue 3, pp. 3568 - 3576
Avalanche photodiodes (APDs) with thin avalanche regions have shown low excess noise characteristics and high gain-bandwidth products, so they are suited for... 
OPTICS | MULTIPLICATION NOISE | SEMICONDUCTORS | P(+)-I-N(+) DIODES
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2017, Volume 38, Issue 5, pp. 600 - 603
Journal Article
Chemical Communications, ISSN 1359-7345, 1/2019, Volume 55, Issue 9, pp. 1192 - 12
Perovskite solar cells (PSCs) reached a certified 23.7% efficiency in 2018 by boosting their surprisingly high open-circuit voltage ( V OC ) and photocurrent.... 
LARGE-AREA | P-I-N | 2-STEP DEPOSITION | TRANSPORT | MANAGEMENT | PERFORMANCE | BASE ADDUCT | CHEMISTRY, MULTIDISCIPLINARY | HIGHLY EFFICIENT | CATIONS | LAYERS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2018, Volume 39, Issue 3, pp. 401 - 404
Journal Article
Optics Express, ISSN 1094-4087, 02/2018, Volume 26, Issue 3, pp. 3037 - 3045
This paper presents the first demonstration of InGaN multiple quantum well (MQW) based micro-photodetectors (mu PD) used as the optical receiver in orthogonal... 
P-I-N | WHITE-LIGHT | TRANSMISSION | ULTRAVIOLET PHOTODETECTORS | OPTICS | HIGH-SPEED | LASER-DIODE | VLC
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2018, Volume 124, Issue 22
Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its... 
BREAKDOWN VOLTAGE | DENSITY | P-I-N | PHYSICS, APPLIED | ELECTRICAL CHARACTERIZATION | EVENT BURNOUT | EPITAXIAL-GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | SCHOTTKY-BARRIER DIODES | SEMICONDUCTOR-DEVICES | FIELD-EFFECT TRANSISTORS
Journal Article
by Liu, Q and Miao, J and Xu, X.G and Xu, Z.D and Meng, K.K and Wu, Y and Jiang, Y
Chemical Physics Letters, ISSN 0009-2614, 04/2019, Volume 721, pp. 68 - 73
All perovskite p-i-n junction La Sr MnO /PbZr Ti O /La Te MnO heterostructures were epitaxially deposited on (0 0 1) SrTiO substrates. Crystallinities and... 
Ferroelectric | Small polarons | P-i-n junction | CHEMISTRY, PHYSICAL | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2019, pp. 1 - 1
This study presents a photo-assisted method to measure the drift velocity of carriers in semiconductors, and successfully used to determine the drift velocity... 
p-i-n diode | saturation velocity | photo-assisted method | gallium nitride (GaN) | drift velocity
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 11/2019, Volume 56, Issue 1, pp. 1 - 1
We comprehensively study the characteristics of dark current for a p-i-n heterostructure photodiode. To reduce the dark current, a wide-bandgap layer (AlGaSb)... 
p-i-n diode | activation energy | room temperature | dark current | heterostructure
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2009, Volume 94, Issue 1, pp. 013102 - 013102-3
This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge)... 
elemental semiconductors | photodetectors | TRANSISTORS | PHYSICS, APPLIED | ion implantation | SILICON | p-i-n photodiodes | PHOTODIODES | germanium | printing
Journal Article
IEEE Photonics Technology Letters, ISSN 1041-1135, 2010, Volume 22, Issue 20, pp. 1530 - 1532
Journal Article
Journal of Power Sources, ISSN 0378-7753, 11/2019, p. 227488
Journal Article
Applied Surface Science, ISSN 0169-4332, 09/2013, Volume 280, pp. 138 - 143
Cu ZnSnS (CZTS) films were successfully prepared by sulfurization of Zn/Sn/Cu multilayers at different temperatures from 350-575 °C. The film sulfurized at 500... 
p-n | CZTS | Sulfurization | p-i-n | a-Si | Heterojunction
Journal Article
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