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Nuclear Inst. and Methods in Physics Research, B, ISSN 0168-583X, 12/2015, Volume 365, pp. 168 - 170
Journal Article
by Kyaw, Z and Zhang, ZH and Liu, W and Tan, ST and Ju, ZG and Zhang, XL and Ji, Y and Hasanov, N and Zhu, BB and Lu, SP and Zhang, YP and Sun, XW and Demir, HV
OPTICS EXPRESS, ISSN 1094-4087, 01/2014, Volume 22, Issue 1, pp. 809 - 816
N-GaN/P-GaN/N-GaN/P-GaN/N-GaN (NPNPN-GaN) junctions embedded between the n-GaN region and multiple quantum wells (MQWs) are systematically studied both... 
OPTICS | EFFICIENCY DROOP | ALGAN | GROWTH | OHMIC CONTACTS | Electrodes | Indium - chemistry | Gallium - chemistry | Semiconductors | Lighting - instrumentation | Materials Testing | Equipment Design | Equipment Failure Analysis
Journal Article
Chemistry of Materials, ISSN 0897-4756, 01/2014, Volume 26, Issue 2, pp. 1243 - 1249
Porous GaN polycrystalline layers with n-type conduction characteristics were catalytically grown from Mg films formed by decomposition of a Mg2N3 precursor... 
INVERSION DOMAINS | 0001 SAPPHIRE | MATERIALS SCIENCE, MULTIDISCIPLINARY | GALLIUM NITRIDE | CHEMISTRY, PHYSICAL | ELECTRON-MICROSCOPY | NANOWIRE HETEROSTRUCTURES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2011, Volume 98, Issue 25, pp. 251111 - 251111-3
We report on the fabrication and characteristics of light-emitting diodes (LEDs) which consist of antimony (Sb) doped p -ZnO , (InGaN/GaN) multiquantum well... 
THIN-FILMS | gallium compounds | PHYSICS, APPLIED | antimony | INGAN/GAN QUANTUM-WELLS | indium compounds | annealing | light emitting diodes | II-VI semiconductors | electroluminescence | semiconductor quantum wells | zinc compounds | P-TYPE ZNO | wide band gap semiconductors | III-V semiconductors
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2014, Volume 116, Issue 24, p. 245702
Faust-Henry coefficients are ratios describing the relative influence of lattice displacements and electric field onto the electric susceptibility. They are... 
CARRIER CONCENTRATION | DOPED GAN | ELECTRONIC-PROPERTIES | PHYSICS, APPLIED | SPECTROSCOPY | III-V NITRIDE | BULK GAN | GALLIUM NITRIDE | P-TYPE GAN | PLASMON COUPLED MODES | SCATTERING | Spectra | Research | Gallium nitrate | Raman effect | Electric properties
Journal Article
Journal Article