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JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 05/2012, Volume 111, Issue 9, p. 93713
Annealing at moderate temperatures is required to activate the silicon surface passivation by Al2O3 thin films while also the thermal stability at higher... 
RECOMBINATION | PHYSICS, APPLIED | FILMS | OXIDE | SILICON SOLAR-CELLS | SURFACE PASSIVATION | SI | DEFECT PASSIVATION | ALD | DIFFUSION | LAYERS | Annealing | Microstructure | Density | Deposition | Silicon dioxide | Thermal stability | Aluminum oxide | Passivation
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 05/2018, Volume 123, Issue 17, p. 173901
The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and... 
SURFACE | PASSIVATION | PHYSICS, APPLIED
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 05/2017, Volume 25, Issue 5, pp. 376 - 383
Journal Article
Applied Physics Express, ISSN 1882-0778, 07/2009, Volume 2, Issue 7
High-pressure oxidation (HPO) of germanium (Ge) for improving electrical properties of Ge/GeO2 stacks was investigated. The capacitance-voltage (C-V)... 
SELECTION | PASSIVATION | PHYSICS, APPLIED
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 02/2015, Volume 106, Issue 5
A stress engineered three dimensional (3D) Triple T-gate (TT-gate) on lattice matched In0.17Al0.83N/GaN nano-channel (NC) Fin-High-Electron-Mobility Transistor... 
PHYSICS, APPLIED | PASSIVATION
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 05/2015, Volume 644, pp. 17 - 24
This paper reports the preparation of insulated soft magnetic powders by HNO 3 passivation process with SWAP Fe 72.8 Si 11.2 B 10.8 Cr 2.3 C 2.9 amorphous... 
Amorphous | Powders | Magnetic | Passivation
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2016, Volume 109, Issue 3, p. 31601
The dehydrogenation of intrinsic hydrogenated amorphous silicon (a-Si:H) at temperatures above approximately 300 °C degrades its ability to passivate silicon... 
CONVERSION EFFICIENCY | CONTACTS | PHYSICS, APPLIED | CRYSTALLINE SILICON | HYDROGEN PASSIVATION | passivation | surface passivation | silicon | solar cells | SOLAR ENERGY | plasma temperature
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2015, Volume 107, Issue 15, p. 151602
This article reports on the effects of aging and light induced degradation of the passivation quality of the interface formed by the crystalline silicon... 
PHYSICS, APPLIED | SURFACE PASSIVATION
Journal Article
Progress in Photovoltaics: Research and Applications, ISSN 1062-7995, 05/2012, Volume 20, Issue 3, pp. 269 - 273
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 11/2011, Volume 99, Issue 19, p. 193504
Unlike silicon and traditional III-V semiconductors, the III-nitrides exhibit high spontaneous and piezoelectric polarization charges at epitaxial polar... 
PHYSICS, APPLIED | AL2O3 | PASSIVATION | GAN | ALGAN/GAN
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2006, Volume 89, Issue 16, p. 163517
The influence of various process conditions on the structural integrity and electrical properties of Al/HfO2/p-In0.13Ga0.87As metal-oxide-semiconductor... 
PASSIVATION | PHYSICS, APPLIED | FILMS
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 06/2008, Volume 92, Issue 22
The paper demonstrates properties of metal oxide semiconductor capacitors fabricated on molecular beam epitaxial In0.53Ga0.47As wafers with the atomic layer... 
PHYSICS, APPLIED | PASSIVATION | GAAS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2014, Volume 105, Issue 20, p. 203508
Through the technique of solid phase epitaxy (SPE), an epitaxial Ge0.955Sn0.045 film was formed on a Ge substrate by depositing an amorphous GeSn film followed... 
PHYSICS, APPLIED | SURFACE PASSIVATION
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 05/2008, Volume 92, Issue 18, p. 183502
A midwave infrared camera (lambda(c)=4.2 mu m) with a 320 x 256 focal plane array (FPA) based on type-II InAs/GaSb strain layer superlattice (SLs) has been... 
PASSIVATION | PHYSICS, APPLIED
Journal Article
Applied Surface Science, ISSN 0169-4332, 02/2011, Volume 257, Issue 9, pp. 4082 - 4090
▶ (NH ) S passivation parameters investigated for optimal chemical passivation of InGaAs. ▶ XPS and AFM used to determine level of native oxide and surface... 
InGaAs | Photoemission | Sulphur passivation | Native oxide | Surface roughness | Ammonium sulphide | Chemical passivation | Atomic force microscopy | Ammonium sulfides | Oxides | Sulfur | X-ray photoelectron spectroscopy | Optimization | Passivation
Journal Article
Applied Surface Science, ISSN 0169-4332, 08/2012, Volume 258, Issue 21, pp. 8371 - 8376
We are studying the thermal stability of thick hydrogenated amorphous aluminum oxide (Al O ) layers (20-50 nm) prepared by a high-throughput plasma-enhanced... 
PECVD | Aluminum oxide | Passivation
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 01/2014, Volume 120, pp. 270 - 274
In this work passivated rear contacts are used to replace point contact passivation schemes for high-efficiency n-type crystalline silicon solar cells. Our... 
Passivated contact | Polysilicon | Interface passivation | Tunnel oxide | Fill factor | Thermal stability | PHYSICS, APPLIED | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | BIPOLAR-TRANSISTORS | Solar cells | Solar batteries | Electric properties | Tunnels | Emittance | Tunnels (transportation) | Photovoltaic cells | Oxides | Silicon | Transport | Passivation
Journal Article
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