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SCIENTIFIC REPORTS, ISSN 2045-2322, 08/2019, Volume 9, Issue 1, pp. 11166 - 7
.... Here, we report Monolithic Optically Reconfigurable Integrated Microwave Switches (MORIMSs) built on a CMOS compatible silicon photonic chip that addresses all of the stringent requirements... 
GAAS | MULTIDISCIPLINARY SCIENCES | PHOTOCONDUCTIVE SWITCH | Silicon | Optics | Physics
Journal Article
Journal of applied physics, ISSN 1089-7550, 2014, Volume 115, Issue 13, p. 133708
Journal Article
physica status solidi (b), ISSN 0370-1972, 01/2015, Volume 252, Issue 1, pp. 105 - 111
Journal Article
Microwave and optical technology letters, ISSN 0895-2477, 2015, Volume 57, Issue 12, pp. 2768 - 2774
Journal Article
Advanced Optical Materials, ISSN 2195-1071, 02/2018, Volume 6, Issue 3, pp. 1700638 - n/a
Journal Article
Microwave and Optical Technology Letters, ISSN 0895-2477, 08/2015, Volume 57, Issue 8, pp. 1946 - 1948
ABSTRACT Silicon carbide photoconductive semiconductor switches with the good performance of breakdown voltage above 10 kV and ∼16‐Ω minimum... 
linear mode | photoconductive semiconductor switches | breakdown voltage | on‐resistance | silicon carbide | on-resistance | WIDE-BAND SOURCE | OPTICS | GAAS | ENGINEERING, ELECTRICAL & ELECTRONIC | Silicon | Silicon carbide | Electric potential | Semiconductors | Bias | Switches | Voltage | Breakdown | Microwaves | Optical pulses
Journal Article
Carbon, ISSN 0008-6223, 06/2020, Volume 162, pp. 181 - 186
We study and fabricate graphene nanowalls/silicon hybrid heterojunction photoconductive detector to provide process technology of the device and theoretical foundation for the purpose of preparation... 
Graphene nanowalls | Photoconductive | Photoresponse | Schottky barrier | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | GROWN GRAPHENE | ABSORPTION | ULTRAHIGH | SCHOTTKY JUNCTION | Integrated circuit fabrication | Silicon | Graphene | Graphite | Detectors
Journal Article
Chinese Physics B, ISSN 1674-1056, 02/2017, Volume 26, Issue 2, p. 28101
Journal Article
中国物理B:英文版, ISSN 1674-1056, 2017, Volume 26, Issue 2, pp. 473 - 476
.... In this paper, we fabricate photoconductive multi-layer graphene(MLG) photodetectors on etched silicon-on-insulator substrates... 
绝缘体 | 光电应用 | 光导 | 硅衬底 | 吸收强度 | 石墨 | 光电探测器 | 光电导效应 | PHYSICS, MULTIDISCIPLINARY | graphene photodetector | photoconductive effect
Journal Article
IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, 01/2011, Volume 17, Issue 1, pp. 17 - 21
Journal Article
Physica Scripta, ISSN 0031-8949, 07/2013, Volume 88, Issue 1, pp. 15008 - 7
This study concerns the modelling, in a dynamic regime of nonlinear operation, of a silicon on insulator (SOI... 
PHYSICS, MULTIDISCIPLINARY | PHOTOCONDUCTIVE SWITCH | Nonlinear dynamics | Electric potential | Waveguides | Nonlinearity | Insulators | Silicon | Photodiodes | Density
Journal Article
Physical review letters, ISSN 1079-7114, 2011, Volume 106, Issue 3, p. 037403
.... The design implies two potential resonance states, and the photoconductive semiconductor (silicon) settled in the critical region plays the role of intermediary for switching the resonator from mode 1 to mode 2... 
FREQUENCIES | CLOAK | PHYSICS, MULTIDISCIPLINARY | RESONATORS | LASER | METAMATERIALS | INDEX | PHASE MODULATOR
Journal Article
Journal of lightwave technology, ISSN 1558-2213, 2019, Volume 37, Issue 19, pp. 5056 - 5066
.... Recently, amorphous Silicon (a-Si) photodiodes with thin a-Si layer (~40 nm) have shown a gain-bandwidth product of over 2 THz with very low excess noise and also have been used as a gain media in a cascaded system with single photon sensitivity... 
localized states | Amorphous silicon | avalanche photodetector | energy relaxation time | Electron traps | Impact ionization | cycling excitation process | Mathematical model | Photoconductivity | high frequency gain | Electric fields | Junctions | junction modulation | STATES | LUCKY-DRIFT MODEL | EXCITATION | TELECOMMUNICATIONS | PHOTODETECTOR | WORK-FUNCTION | MOBILITIES | ENGINEERING, ELECTRICAL & ELECTRONIC | impact ionization | PHOTOCONDUCTIVE GAIN | FILMS | OPTICS | PHOTOCURRENT MULTIPLICATION
Journal Article
Advanced optical materials, ISSN 2195-1071, 2014, Volume 2, Issue 6, pp. 549 - 554
Journal Article
Journal of physics. D, Applied physics, ISSN 1361-6463, 2020, Volume 53, Issue 9, p. 095105
Carrier dynamics and photoconductivity in epitaxial-grown low-temperature GaAs on nominal and vicinal Si(1 0 0) substrates ('LT-GaAs/Si') were studied to... 
photoconductive antenna | PHYSICS, APPLIED | TERAHERTZ SPECTROSCOPY | ANGLE | GaAs on silicon | terahertz
Journal Article
Nano Letters, ISSN 1530-6984, 07/2016, Volume 16, Issue 7, pp. 4648 - 4655
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2017, Volume 64, Issue 12, pp. 4952 - 4958
In contrast to the conventional planar p-i-n photodiode and a metal-semiconductor-metal photodetector, the 3-D dual-gate photosensitive thin-film transistor... 
amorphous silicon | photoconductive gain | photosensitive TFT | Indium tin oxide | Lithography | dual-gate thin-film transistor (TFT) | Logic gates | Threshold voltage | Thin film transistors | Photonics | 3-DTFT architecture | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Gates (Electronics) | Research
Journal Article