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ACS Nano, ISSN 1936-0851, 01/2012, Volume 6, Issue 1, pp. 74 - 80
Journal Article
Nano Letters, ISSN 1530-6984, 07/2012, Volume 12, Issue 7, pp. 3695 - 3700
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2017, Volume 110, Issue 26, p. 261109
Scalable fabrication of two-dimensional materials-based devices with consistent characteristics remains a significant impediment in the field. Here, we report... 
PHOTOTRANSISTORS | PHYSICS, APPLIED | FIELD
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2017, Volume 111, Issue 15, p. 153105
We investigated the induction heating effect on device characteristics of flexible molybdenum disulfide (MoS2) field-effect transistors (FETs). A polyimide... 
LAYER MOS2 | PHOTOTRANSISTORS | PHYSICS, APPLIED
Journal Article
Nature Photonics, ISSN 1749-4885, 03/2017, Volume 11, Issue 3, pp. 193 - 199
Solution-processed phototransistors can substantially advance the performance of image sensors. Phototransistors exhibit large photoconductive gain and a... 
LARGE-AREA | VISIBLE-LIGHT | PHYSICS, APPLIED | PERFORMANCE | LIGHT-EMITTING TRANSISTORS | THIN-FILM TRANSISTORS | PHOTODIODES | POLYMER PHOTOTRANSISTORS | OPTICS | ARRAYS | ELECTRONICS | BULK HETEROJUNCTION | Images | Dynamic range | Heterojunctions | Frames per second | Sensors | Irradiance | Devices | Phototransistors
Journal Article
Nature Communications, ISSN 2041-1723, 05/2014, Volume 5, Issue 1, p. 3731
Molybdenum disulphide is a layered transition metal dichalcogenide that has recently raised considerable interest due to its unique semiconducting and... 
BANDGAP | ELECTRONIC-PROPERTIES | TRANSPORT | PHOTOLUMINESCENCE | TEMPERATURE | MOS2 | PHOTOTRANSISTORS | MULTIDISCIPLINARY SCIENCES | STATIC COMPRESSION | MONOLAYER | INSULATOR-TRANSITION
Journal Article
by Li, H and Wu, JMT and Yin, ZY and Zhang, H
ACCOUNTS OF CHEMICAL RESEARCH, ISSN 0001-4842, 04/2014, Volume 47, Issue 4, pp. 1067 - 1075
CONSPECTUS: Although great progress has been achieved in the study of graphene, the small current ON/OFF ratio in graphene-based field-effect transistors... 
TRANSITION-METAL DICHALCOGENIDES | MONOLAYER MOS2 | TRANSISTORS | PHOTOLUMINESCENCE | ULTRATHIN NANOSHEETS | PHOTOTRANSISTORS | GROWTH | VALLEY POLARIZATION | FABRICATION | IDENTIFICATION | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2019, Volume 114, Issue 1, p. 11103
Nanostructured zinc oxide (ZnO) semiconductors have emerged as promising materials for high-performance photodetectors due to their natural direct bandgap and... 
TRANSISTOR | GRAPHENE | PHYSICS, APPLIED | PHOTOCURRENT GENERATION | PHOTOTRANSISTORS
Journal Article