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Journal Article
Journal of Physical Chemistry C, ISSN 1932-7447, 08/2015, Volume 119, Issue 35, pp. 20474 - 20480
Defects are inevitably present in materials and always can affect their properties. Here we perform first-principles calculations to systematically investigate... 
POINT-DEFECTS | SEMICONDUCTOR | POROUS SILICENE | MOBILITY | BUILDING-BLOCKS | MEMBRANE | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | TRANSISTORS | NANOTUBES | LAYER BLACK PHOSPHORUS
Journal Article
Physical Chemistry Chemical Physics, ISSN 1463-9076, 4/2015, Volume 17, Issue 15, pp. 14 - 113
In the present work, thin ZnO layers were synthesized by the sol-gel method with subsequent spin-coating on Si(100). We show that the detailed analysis of... 
POINT-DEFECTS | SOLAR-CELLS | CHEMISORPTION | CHEMICAL-VAPOR-DEPOSITION | SEMICONDUCTORS | PHYSICS, ATOMIC, MOLECULAR & CHEMICAL | CHEMISTRY, PHYSICAL | ZNO | NANOROD ARRAYS | TRANSPARENT | ELECTRONIC-STRUCTURE | WORK-FUNCTION | Solar cells | Thin films | Crystal defects | Energy levels | Photovoltaic cells | Photoemission | Zinc oxide | Carrier density
Journal Article
Science, ISSN 0036-8075, 12/1999, Volume 286, Issue 5446, pp. 1957 - 1959
Journal Article
1981, Springer series in solid-state sciences, ISBN 9780387115153, Volume 22., xvii, 265
Book
Journal of Applied Physics, ISSN 0021-8979, 05/2016, Volume 119, Issue 18, p. 181101
Point defects affect or even completely determine physical and chemical properties of semiconductors. Characterization of point defects based on experimental... 
POINT-DEFECTS | DX CENTERS | ELECTRON | PHYSICS, APPLIED | LUMINESCENCE | GAN | 1ST-PRINCIPLES CALCULATIONS | SILICON | IDENTIFICATION | CAPTURE | GAAS | Current carriers | Organic chemistry | Point defects | Semiconductors | Electromagnetic absorption | Configuration management | Chemical properties | MATERIALS SCIENCE
Journal Article
1981, Springer series in solid-state sciences, ISBN 9780387105185, Volume 22, 35, 2 v. --
Book
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2013, Volume 113, Issue 4, p. 44501
We performed hybrid functional calculations of native point defects and dangling bonds (DBs) in alpha-Al2O3 to aid in the identification of charge-trap and... 
AL2O3 | PHYSICS, APPLIED | SILICA | Current carriers | Vacancies | Point defects | DBS | Semiconductors | Aluminum | Interstitials | Conduction band
Journal Article
Applied Physics Letters, ISSN 0003-6951, 01/2017, Volume 110, Issue 2, p. 22103
Dopant-defect reactions dominate the defect formation in mono-crystalline ZnO samples implanted with Ag and B ions. This is in contrast to most other ion... 
PHYSICS, APPLIED | SEMICONDUCTORS | STABILITY | ION-IMPLANTATION | CRYSTALS | NANOSTRUCTURES | DAMAGE | Crystal defects | Stacking faults | Point defects | Defect annealing | Dynamic annealing | Implants | Interstitials | Zinc oxide | Diffusion | Fysik | Physical Sciences | Naturvetenskap | Natural Sciences
Journal Article
1987, ISBN 0412013312, viii, 236
Book