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ELECTROCHEMISTRY, ISSN 1344-3542, 08/2004, Volume 72, Issue 8, pp. 569 - 576
In current Cu/low-k damascene processing, post-CMP cleaning poses much more difficulty than in early processes, due to variation in the kinds of slurry and cleaning solutions developed for low-k materials... 
ELECTROCHEMISTRY | cyclic voltammetry | CMP | AFM | FT-IR | QCM | post-cleaning | slurry
Journal Article
Japanese journal of applied physics. Pt. 1, Regular papers & short notes, ISSN 0021-4922, 03/2002, Volume 41, Issue 3 A, pp. 1305 - 1310
The purpose of this study was to investigate the effect of organic acids in alumina-based slurry on the stability of slurry particles and particle... 
Oxalic acid | Succinic acid | Post Cu CMP cleaning | Slurry stability | Citric acid | Cu CMP slurry | Organic acids | Post CuCMP cleaning | slurry stability | PHYSICS, APPLIED | CuCMP slurry | citric acid | succinic acid | CITRIC-ACID | oxalic acid | organic acids | ALUMINA
Journal Article
2001, SOLID STATE PHENOMENA, Volume 76-77, 4
Dilute HF or derivatives are still frequently used in post Cu Chemical Mechanical Polishing (CMP) cleaning... 
PHYSICS, CONDENSED MATTER | corrosion | PHYSICS, APPLIED | post CuCMP cleaning | MATERIALS SCIENCE, MULTIDISCIPLINARY | PHOTOCORROSION | COPPER
Book Chapter
2001, SOLID STATE PHENOMENA, Volume 76-77, 4
One of the main tasks of the post Chemical Mechanical Planarization (CMP) cleaning step is to remove slurry residues left on the surface after the polishing process... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | post CuCMP cleaning | MATERIALS SCIENCE, MULTIDISCIPLINARY | megasonics
Book Chapter
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