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1. Full Text Light emission enhancement from Ge quantum dots with phosphorous [delta]-doped neighboring confinement structures
by Sawano, K and Nakama, T and Mizutani, K and Harada, N and Xu, X and Maruizumi, T
Journal of Crystal Growth, ISSN 0022-0248, 11/2017, Volume 477, p. 131
* Ge quantum dots were fabricated and effects of phosphorus [delta]-doping was examined. * P surface segregation was suppressed by the control of growth... 
Quantum wells
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2. Full Text Photodetachment of [Au.sup.-] ion confined in a quantum well
by Wang, De-hua and Shi, Tong and Sun, Xin-yue
Canadian Journal of Physics, ISSN 0008-4204, 09/2019, Volume 97, Issue 9, p. 974
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3. Erratum: “Effects of localization on hot carriers in InAs/AlAsxSb1−x quantum wells” [Appl. Phys. Lett. 106, 061902 (2015)]
by Tang J and Whiteside V R and Esmaielpour H and Vijeyaragunathan S and Mishima T D and Santos M B and Sellers I R
Applied Physics Letters, ISSN 0003-6951, 07/2015, Volume 107, Issue 4
Quantum wells
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4. Quantum wells, wires and dots
: theoretical and computational physics of semiconductor nanostructures
by Harrison, P. (Paul) and Valavanis, Alex
2016, Fourth edition., ISBN 9781118923368
Quantum dots | Quantum wells | Nanowires
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5. Erratum: “Terahertz quantum well photodetectors with reflection-grating couplers” [Appl. Phys. Lett. 105, 231123 (2014)]
by Zhang R and Fu Z L and Gu L L and Guo X G and Cao J C
Applied Physics Letters, ISSN 0003-6951, 01/2015, Volume 106, Issue 2
Quantum wells
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6. Full Text Stark effect in GaNAsBi/GaAs quantum wells operating at 1.55[mu]m
by Bilel, C and Habchi, M.M and Rebey, A and Jani, B. El
Thin Solid Films, ISSN 0040-6090, 04/2015, Volume 581, p. 70
The effect of an applied stationary electric field on the band structure of GaNAsBi/GaAs quantum wells has been investigated using self-consistent calculation.... 
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7. Full Text Electric-field driven photoluminescence probe of photoelectric conversion in InGaN-based photovoltaics
by Peng, Mingzeng and Zheng, Xinhe and Wei, Huiyun and He, Yingfeng and Li, Meiling and An, Yunlai and Qiu, Peng and Song, Yimeng
Optics Express, ISSN 1094-4087, 07/2018, Volume 26, Issue 14, pp. A615 - A625
The spatial distribution of electric field in photovoltaic multiple quantum wells (MQWs) is extremely important to dictate the mutual competition of... 
QUANTUM-WELLS | OPTICS
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8. Full Text Correction: Confined and interface optical phonon emission in GaN/InGaN double barrier quantum well heterostructures
by PLOS ONE Staff and PLOS ONE Staff and The PLOS ONE Staff
PloS one, ISSN 1932-6203, 2019, Volume 14, Issue 5, p. e0216630
[This corrects the article DOI: 10.1371/journal.pone.0214971.]. 
Quantum wells | Heterostructures
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9. Full Text Energy band modulation of GaAs/Al.sub.0.26Ga.sub.0.74As quantum well in 3D self-assembled nanomembranes
by Zhang, Fei and Huang, GaoShan and Nie, XiaoFei and Cao, Xin and Ma, Zhe and Ding, Fei and Di, ZengFeng and Zhen, HongLou and Mei, YongFeng
Physics Letters A, ISSN 0375-9601, 08/2019, Volume 383, Issue 24, p. 2938
In this study, we investigate the modulation of energy band in 3D self-assembled nanomembranes containing GaAs/Al.sub.0.26Ga.sub.0.74As quantum wells (QWs).... 
Quantum wells | Analysis
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10. Full Text Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN
by Cho, Chu-Young and Kim, Ki Seok and Lee, Sang-Jun and Kwon, Min-Ki and Ko, Hyungduk and Kim, Sung-Tae and Jung, Gun-Young and Park, Seong-Ju
Applied Physics Letters, ISSN 0003-6951, 07/2011, Volume 99, Issue 4, p. 41107
We report the fabrication and characterization of surface plasmon (SP)-enhanced blue light-emitting diodes (LEDs) with Ag nanoparticles and SiO2 nano-disks... 
QUANTUM-WELLS | PHYSICS, APPLIED
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11. Full Text Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles
by Cho, Chu-Young and Lee, Sang-Jun and Song, Jung-Hoon and Hong, Sang-Hyun and Lee, Song-Mae and Cho, Yong-Hoon and Park, Seong-Ju
Applied Physics Letters, ISSN 0003-6951, 02/2011, Volume 98, Issue 5, pp. 051106 - 051106-3
We demonstrate the surface plasmon (SP) enhanced green light-emitting diodes (LEDs). The Au nanoparticles were embedded in the p -GaN of LEDs. The... 
QUANTUM-WELLS | PHYSICS, APPLIED | PHOTOLUMINESCENCE
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12. Full Text Direct band gap In.sub.x Ga.sub.1- .sub.x As/Ge type II strained quantum wells for short-wave infrared p-i-n photodetector
by Harbi, N and Sfina, N and Jbeli, A and Lazzari, J.-L and Said, M
Optical Materials, ISSN 0925-3467, 08/2015, Volume 46, p. 472
* The conduction and valence band offsets In.sub.x Ga.sub.1-x As/Ge. * GaAs/Ge/In.sub.x Ga.sub.1-x As/GaAs structures designed for short-wave infrared... 
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13. Enhanced Absorption by Linewidth Narrowing in Optically Excited Type-II Semiconductor Heterostructures
by M Stein and C Lammers and M J Drexler and C Fuchs and W Stolz and M Koch
Physical Review Letters, ISSN 0031-9007, 07/2018, Volume 121, Issue 1, p. 017401
We experimentally report a surprising linewidth narrowing of the direct exitonic 1 s heavy-hole transition in a type-II quantum well system. This narrowing,... 
Absorption | Quantum wells | Heterostructures
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14. Full Text Optimization of high optical gain in type-II In.sub.0.70Ga.sub.0.30As/GaAs.sub.0.40Sb.sub.0.60 lasing nano-heterostructure for SWIR applications
by Nirmal, H.K and Yadav, Nisha and Rahman, F and Alvi, P.A
Superlattices and Microstructures, ISSN 0749-6036, 12/2015, Volume 88, p. 154
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15. Full Text Surface plasmon enhanced light emission from AlGaN-based ultraviolet light-emitting diodes grown on Si (111)
by Cho, Chu-Young and Zhang, Yinjun and Cicek, Erdem and Rahnema, Benjamin and Bai, Yanbo and McClintock, Ryan and Razeghi, Manijeh
Applied Physics Letters, ISSN 0003-6951, 2013, Volume 102, Issue 21, p. 211110
We report on the development of surface plasmon (SP) enhanced AlGaN-based multiple quantum wells (MQWs) ultraviolet (UV) light-emitting diodes (LEDs) grown on... 
QUANTUM-WELLS | PHYSICS, APPLIED | PHOTOLUMINESCENCE
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16. Erratum: “High photoresponse in room temperature quantum cascade detector based on coupled quantum well design” [Appl. Phys. Lett. 109, 261107 (2016)]
by Dougakiuchi Tatsuo and Fujita Kazuue and Hirohata Toru and Ito Akio and Hitaka Masahiro and Edamura Tadataka
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10
Well design | Quantum wells
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17. Scanning near-field microscopy of carrier lifetimes in m-plane InGaN quantum wells
by Ivanov Ruslan and Marcinkevičius Saulius and Uždavinys Tomas K and Kuritzky Leah Y and Nakamura Shuji and Speck James S
Applied Physics Letters, ISSN 0003-6951, 01/2017, Volume 110, Issue 3
Time-resolved scanning near-field photoluminescence (PL) spectroscopy was applied to map carrier lifetimes in wide m-plane InGaN/GaN quantum wells grown on... 
Quantum wells | Photoluminescence | Substrates
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18. Quantum confined laser devices
: optical gain and recombination in semiconductors
by Blood, Peter
2015, First edition., Oxford master series in physics, ISBN 9780199644513
This title takes students, final year undergraduates and graduates, and researchers, along the path to understand quantum processes in semiconductors, and to... 
Semiconductor lasers | Quantum dots | Quantum wells
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19. Full Text Oscillator strengths for the intersubband transitions in GaAs/InGa.sub.1-x As quantum wells and its strain dependence
by Msahli, Melek and Saidi, Hosni and Ahmed, Amira Ben and Ridene, Said and Bouchriha, Habib
Optik: International Journal for Light and Electron Optics, ISSN 0030-4026, 06/2016, Volume 127, Issue 11, p. 4903
The band structure, interband and oscillator strengths for valence intersubband transitions have been theoretically calculated for highly strained In.sub.x... 
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20. Full Text AlxGa1-xN-based semipolar deep ultraviolet light-emitting diodes
by Akaike, Ryota and Ichikawa, Shuhei and Funato, Mitsuru and Kawakami, Yoichi
Applied Physics Express, ISSN 1882-0778, 06/2018, Volume 11, Issue 6
Deep ultraviolet (UV) emission from AlxGa1-xN-based light-emitting diodes (LEDs) fabricated on semipolar (1 (1) over bar 02) (r-plane) AlN substrates is... 
QUANTUM-WELLS | PHYSICS, APPLIED
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