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Optics Express, ISSN 1094-4087, 05/2012, Volume 20, Issue 10, pp. 11316 - 11320
Electrically pumped lasing from Germanium-on-Silicon pnn heterojunction diode structures is demonstrated. Room temperature multimode laser with 1mW output... 
ROOM-TEMPERATURE | OPTICS | INTEGRATION | GAIN
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2009, Volume 95, Issue 23, pp. 232106 - 232106-3
We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 12/2012, Volume 101, Issue 25
Fully epitaxial Co2FexMn1-xSi(CFMS)/Ag/Co2FexMn1-xSi current-perpendicular-to-plane giant magnetoresistive devices with various Fe/Mn ratios x and top CFMS... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2007, Volume 90, Issue 21, p. 212507
The authors investigate the effect of electrode composition on the tunnel magnetoresistance (TMR) ratio of (CoxFe100-x)(80)B-20/MgO/(CoxFe100-x)(80)B-20... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2010, Volume 97, Issue 19, p. 192103
This paper investigates the illuminated behaviors of InGaZnO thin film transistors with and without a SiOx passivation. For the passivated device, more... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
OPTICS EXPRESS, ISSN 1094-4087, 09/2016, Volume 24, Issue 18, pp. 21081 - 21089
Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 mu m wavelength range are... 
ROOM-TEMPERATURE | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2009, Volume 95, Issue 25, pp. 252103 - 252103-3
We developed amorphous hafnium-indium-zinc oxide (HIZO) thin films as oxide semiconductors and investigated the films electrically and physically. Adding of... 
LAYER | ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
by Gao, H.-J and Guo, H and Hu, H and Huang, L and Pan, Y and Zhang, L and Du, S and Gao, M
Applied Physics Letters, ISSN 0003-6951, 01/2011, Volume 98, Issue 3, pp. 033101 - 033101-3
We report on epitaxial growth of graphene on Pt(111) surface. It was found out that the proportion of different rotational domains varies with growth... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | FILMS
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 02/2009, Volume 42, Issue 3, pp. 035106 - 035106 (5)
Thin film transistors (TFTs) with amorphous zinc tin oxide (ZTO) channel layer were fabricated by a simple and low-cost solution process. The ZTO thin films... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | SEMICONDUCTORS
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 10/2016, Volume 109, Issue 17
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown on Si substrates. The whole device structures were grown by an... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | HETEROSTRUCTURES | SILICON | DIODE
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 08/2008, Volume 93, Issue 8
The authors observed tunnel magnetoresistance (TMR) ratio of 604% at 300 K in Ta/Co20Fe60B20/MgO/Co20Fe60B20/Ta pseudo-spin-valve magnetic tunnel junction... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | JUNCTIONS | DEPENDENCE
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 01/2012, Volume 100, Issue 3
We report on GaSb-based laterally coupled distributed-feedback (DFB) diode lasers designed to operate at wavelengths near 2.05 mu m. Second-order Bragg... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
Optics Express, ISSN 1094-4087, 10/2012, Volume 20, Issue 22, pp. 24272 - 24279
A strain-balanced, AlInAs/InGaAs/InP quantum cascade laser structure, designed for light emission near 9 mu m, was grown by molecular beam epitaxy. Laser... 
ROOM-TEMPERATURE | POWER | OPTICS
Journal Article
by Park, J and Kim, S and Kim, C and Song, I and Yin, H and Kim, KK and Lee, S and Hong, K and Lee, J and Jung, J and Lee, E and Kwon, KW and Park, Y
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 08/2008, Volume 93, Issue 5, p. 53505
Amorphous-gallium-indium-zinc-oxide (a-GIZO) thin filmtransistors (TFTs) are fabricated without annealing, using processes and equipment for conventional... 
ROOM-TEMPERATURE | PHYSICS, APPLIED
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2008, Volume 93, Issue 12, pp. 123508 - 123508-3
We investigated the impact of the passivation layer on the stability of indium-gallium-zinc oxide (IGZO) thin film transistors. While the device without any... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | ELECTRONIC TRANSPORT | NANOWIRES
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 09/2008, Volume 93, Issue 11, p. 112506
A large tunnel magnetoresistance (TMR) ratio of 753% has been observed at 2 K in a magnetic tunnel junction (MTJ) using a Co2MnSi Heusler alloy electrode and a... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | DEPENDENCE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2008, Volume 92, Issue 19, pp. 192101 - 192101-3
We report stable, high performance zinc oxide thin film transistors grown by an atmospheric pressure atomic layer deposition system. With all deposition and... 
ROOM-TEMPERATURE | DISPLAYS | PHYSICS, APPLIED
Journal Article
Optics Express, ISSN 1094-4087, 04/2007, Volume 15, Issue 8, pp. 5172 - 5178
We report on efficient lasing of Pr-doped fluoride materials with cw output powers up to 600 mW in the visible spectral range. Praseodymium doped LiYF4 and... 
EMISSION | ROOM-TEMPERATURE | OPTICS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2010, Volume 96, Issue 10, p. 102107
We investigated the transfer characteristics and the gate-bias stability of amorphous indium-gallium-zinc oxide thin-film transistors when the channel layer... 
ROOM-TEMPERATURE | PHYSICS, APPLIED | TFTS
Journal Article
Physical Review Letters, 110 (20), 2013, ISSN 0031-9007, 05/2013, Volume 110, Issue 20, pp. 206601 - 206601
We report anisotropic magnetoresistance in Pt|Y3Fe5O12 bilayers. In spite of Y3Fe5O12 being a very good electrical insulator, the resistance of the Pt layer... 
ROOM-TEMPERATURE | TUNNEL-JUNCTIONS | PHYSICS, MULTIDISCIPLINARY | INSULATOR | SEMICONDUCTORS | MULTILAYERS
Journal Article
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