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IEEE Electron Device Letters, ISSN 0741-3106, 02/2017, Volume 38, Issue 2, pp. 175 - 178
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 08/2015, Volume 36, Issue 8, pp. 769 - 771
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 12/2015, Volume 62, Issue 12, pp. 4029 - 4036
Journal Article
by Sun, C and Lu, S.M and Jin, F and Mo, W.Q and Song, J.L and Dong, K.F
Journal of Electronic Materials, ISSN 0361-5235, 2019
Journal Article
Thin Solid Films, ISSN 0040-6090, 2013, Volume 531, pp. 1 - 20
In the advancement of complementary metal-oxide-semiconductor device technology, SiO was used as an outstanding dielectric and has dominated the... 
Unipolar RRAM | Bipolar RRAM | Dielectric constant | Zirconium oxide | High-k | Flash memory | MIM capacitor | MOS capacitor
Journal Article
Applied Physics Letters, ISSN 0003-6951, 05/2013, Volume 102, Issue 20, p. 203507
This letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low... 
PHYSICS, APPLIED | RRAM
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 11/2019, Volume 103, p. 104614
Resistive random access memory (RRAM) devices with Au/sp -BN/p-Si sandwich structure have been successfully fabricated. Single precursor ammonia borane (NH BH... 
CVD | sp2-BN film | RRAM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 07/2013, Volume 103, Issue 3, p. 33505
A vertically integrated latch-up based n-p-n bidirectional diode, which is analogous to an open-base bipolar junction transistor, is demonstrated for bipolar... 
PHYSICS, APPLIED | RRAM
Journal Article
by Wu, MC and Wu, TH and Tseng, TY
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2012, Volume 111, Issue 1, p. 14505
The preparation and electrical properties of Ti/Co Embedded (Co-E) ZrO2/Pt resistive switching memories are investigated. The Co nano-dots are formed in ZrO2... 
PHYSICS, APPLIED | RRAM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2013, Volume 102, Issue 17, p. 172903
In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which... 
PHYSICS, APPLIED | RRAM | MEMORY | CO2 FLUID TREATMENT
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2016, Volume 27, Issue 43, pp. 435701 - 435701
The application of a NiO y /NiO x bilayer in resistive switching (RS) devices with x > y was studied for its ability to achieve reliable multilevel cell (MLC)... 
RRAM | bilayer | NiO | multibit operation
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 08/2019, Volume 216, p. 111042
Resistive Random Access Memory (RRAM) device is considered as a promising NVM device to replace flash memory device due to its simple design, small size and... 
Hard breakdown | Tomography | RRAM | TEM
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2016, Volume 31, Issue 6, p. 63002
Journal Article
Nano Letters, ISSN 1530-6984, 12/2015, Volume 15, Issue 12, pp. 7970 - 7975
Filamentary-based oxide resistive memory is considered as a disruptive technology for nonvolatile data storage and reconfigurable logic. Currently accepted... 
scalpel SPM | resistive random access memory (RRAM) | resistive switching | Conductive filament | C-AFM tomography | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MECHANISM | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | RRAM | CHEMISTRY, MULTIDISCIPLINARY | DEVICES | NANOSCALE WEAR
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2012, Volume 100, Issue 11
Resistive switching behavior of the Ti/HfO2:NiSi:HfO2/Pt memory structure is investigated. Auger electron spectroscopy analysis indicates no metal diffusion... 
PHYSICS, APPLIED | GROWTH | RRAM | LOW-POWER
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2013, Volume 34, Issue 5, pp. 677 - 679
In this letter, a double-active-layer (Zr:SiO x /C:SiO x ) resistive switching memory device with a high on/off resistance ratio and small working current... 
resistance random access memory (RRAM) | Conduction | graphene oxide | hopping | redox reaction | conduction | RRAM | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Modelling and Simulation in Materials Science and Engineering, ISSN 0965-0393, 09/2014, Volume 22, Issue 6
Journal Article
International Journal of High Speed Electronics and Systems, ISSN 0129-1564, 06/2016, Volume 25, Issue 1-2
Journal Article
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