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Thin solid films, ISSN 0040-6090, 2013, Volume 531, pp. 1 - 20
In the advancement of complementary metal-oxide-semiconductor device technology, SiO was used as an outstanding dielectric and has dominated the... 
Unipolar RRAM | Bipolar RRAM | Dielectric constant | Zirconium oxide | High-k | Flash memory | MIM capacitor | MOS capacitor
Journal Article
IEEE electron device letters, ISSN 0741-3106, 08/2015, Volume 36, Issue 8, pp. 769 - 771
Journal Article
IEEE transactions on computer-aided design of integrated circuits and systems, ISSN 0278-0070, 11/2020, pp. 1 - 1
Emerging Resistive Random Access Memory (RRAM) has shown the great potential of in-memory processing capability, and thus attracts considerable research... 
Neural Network | RRAM | Reliability
Journal Article
IEEE electron device letters, ISSN 0741-3106, 11/2020, pp. 1 - 1
We demonstrated a resistive random access memory (RRAM) based embedded non-volatile memory (e-NVM) solution integrated in the 0.13 μm partially depleted... 
PD-SOI | Irradiation-resistant | RRAM
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 2012, Volume 59, Issue 9, pp. 2468 - 2475
Journal Article
Microelectronics Journal, ISSN 0026-2692, 04/2018, Volume 74, pp. 94 - 105
RRAM as an analog-like element could be utilized in many interesting applications. Highly non-linear characteristics and fabrication related variations are the... 
Stanford RRAM models | Analog application of RRAM | RRAM | RRAM gap-length controllability | Precise RRAM state control | Engineering, Electrical & Electronic | Engineering | Science & Technology - Other Topics | Nanoscience & Nanotechnology | Technology | Science & Technology
Journal Article
2014, International series on advances in solid state electronics and technology, ISBN 9789814460903, xxxiii, 274
Book
Proceedings of the IEEE, ISSN 1558-2256, 06/2012, Volume 100, Issue 6, pp. 1951 - 1970
Journal Article
Nanotechnology, ISSN 0957-4484, 08/2016, Volume 27, Issue 36, pp. 365204 - 365204
The implementation of highly anticipated hardware neural networks (HNNs) hinges largely on the successful development of a low-power, high-density, and... 
hardware neural network | RRAM | three dimensional | electronic synapse
Journal Article
by Sun, C and Lu, S.M and Jin, F and Mo, W.Q and Song, J.L and Dong, K.F
Journal of electronic materials, ISSN 0361-5235, 2019
Journal Article
Nanotechnology, ISSN 0957-4484, 09/2016, Volume 27, Issue 43, pp. 435701 - 435701
The application of a NiO y /NiO x bilayer in resistive switching (RS) devices with x > y was studied for its ability to achieve reliable multilevel cell (MLC)... 
RRAM | bilayer | NiO | multibit operation
Journal Article
IEEE transactions on electron devices, ISSN 0018-9383, 12/2015, Volume 62, Issue 12, pp. 4029 - 4036
Journal Article
IEEE electron device letters, ISSN 0741-3106, 08/2016, Volume 37, Issue 8, pp. 994 - 997
We analyze the response of identical pulses on a filamentary resistive memory (RRAM) to implement the synapse function in neuromorphic systems. Our findings... 
Electrodes | Neuromorphic system | Neuromorphics | Neurons | potentiation | Switches | Tin | Hafnium compounds | Pattern recognition | resistive memory (RRAM) | synaptic behavior | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
Journal Article
Semiconductor science and technology, ISSN 1361-6641, 06/2016, Volume 31, Issue 6, p. 063002
Journal Article
Advanced functional materials, ISSN 1616-301X, 05/2015, Volume 25, Issue 19, pp. 2876 - 2883
Journal Article
IEEE transactions on electron devices, ISSN 1557-9646, 08/2014, Volume 61, Issue 8, pp. 2912 - 2919
Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a conductive filament (CF) across a thin insulating layer. Due to the... 
Resistance | Analytical models | Switches | random telegraph noise (RTN) | Numerical models | Hafnium compounds | Integrated circuit modeling | resistive switching memory (RRAM) | Noise fluctuations | Measurement | Monte Carlo method | Usage | Statistical models | Numerical analysis | Random access memory | Hafnium | Voltage | Design and construction | Electric properties | Models
Journal Article
Thin solid films, ISSN 0040-6090, 03/2013, Volume 531, pp. 1 - 20
Journal Article