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Journal of the Korean Physical Society, ISSN 0374-4884, 07/2016, Volume 69, Issue 2, pp. 207 - 212
The temperature dependence of the photocurrent in Ge1−xSnx layers was measured for different Sn compositions (0.00 x 0.83%). As the Sn composition in the... 
GeSn | Photocurrent | Bowing parameter | RTCVD | 물리학
Journal Article
Sensors and actuators. A. Physical., ISSN 0924-4247, 08/2018, Volume 279, pp. 462 - 466
The SiCN/p-porous silicon/p-silicon heterojunction was developed for ultraviolet detecting applications. A refined RTCVD systemwas used to deposit the SiCN... 
Rapid thermal chemical vapor deposition (RTCVD) | Photocurrent to dark current ratio (PDCR) | Porous silicon (PS) | SiCN | Ultraviolet (UV) | THIN-FILMS | LOW-NOISE | ENGINEERING, ELECTRICAL & ELECTRONIC | SILICON-CARBON NITRIDE | POROUS SILICON | BUFFER LAYER | INSTRUMENTS & INSTRUMENTATION | PHOTODETECTORS | GAN | FABRICATION
Journal Article
Sensors and actuators. A. Physical., ISSN 0924-4247, 06/2016, Volume 244, pp. 121 - 125
•The SiCN/p-Si heterojunction was developed for UV detecting applications.•The SiCN film was deposited on p-Si substrate with RTCVD system.•The developed... 
RTCVD | SiCN | PDCR | Heterojunction | SILICON-CARBON NITRIDE | POROUS SILICON | INSTRUMENTS & INSTRUMENTATION | FILMS | GAP | FABRICATION | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Silicon | Chemical vapor deposition | Detectors | Low cost | Silicon substrates | Heterojunctions | Zinc oxide | Detection | Ultraviolet | Diodes | Carbon
Journal Article
Solid-state electronics, ISSN 0038-1101, 10/2016, Volume 124, pp. 35 - 41
We have investigated the initial stage of low temperature epitaxy (LTE) of Ge on 8″-dia. Si (100) substrate using a rapid thermal chemical vapor deposition... 
RTCVD | Ge2H6 | Ge on Si | GeH4 | LTE | Activation energy | TEM | GeH | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | SILICON | THREADING-DISLOCATION DENSITIES | ENGINEERING, ELECTRICAL & ELECTRONIC | GROWTH | LAYER
Journal Article
Solid-state electronics, ISSN 0038-1101, 12/2015, Volume 114, pp. 55 - 59
•The SiCN/PS heterojunction was developed for low cost UV detecting applications.•The SiCN film was deposited on PS substrates with RTCVD.•The PS layer... 
RTCVD | Porous silicon (PS) | SiCN | Heterojunction | Ultraviolet (UV) | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CARBON NITRIDE | ENGINEERING, ELECTRICAL & ELECTRONIC | POROUS SILICON | FILMS | GAN | SI | FABRICATION | Comparative analysis | Silicon | Silicon compounds | Chemical vapor deposition | Detectors
Journal Article
Applied surface science, ISSN 0169-4332, 10/2013, Volume 282, pp. 472 - 477
•Epitaxial growth of Si1−xGex on Si at 350°C has been achieved by RTCVD.•Si2H6 and GeF4 are used as source gases.•GeF4 can be reduced into Ge by the reductant... 
Epitaxial growth | RTCVD | GeF4 | Silicon germanium | GeF | THIN-FILMS | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | QUALITY | GE LAYERS | CHEMISTRY, PHYSICAL | CVD | SI2H6 | MATERIALS SCIENCE, COATINGS & FILMS | Chemical vapor deposition | Epitaxy | Silicon | Threading dislocations | Silicon substrates | Germanium | Crystallinity | Microstructure | Density | Optimization
Journal Article
Electronic materials letters, ISSN 1738-8090, 03/2018, Volume 14, Issue 2, pp. 207 - 213
We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as... 
GeSn | SnCl | RTCVD | HRXRD | RSM | SnCl4 | Ge2H6 | ALLOYS | MATERIALS SCIENCE, MULTIDISCIPLINARY
Journal Article
Journal of the Korean Physical Society, ISSN 0374-4884, 05/2018, Volume 72, Issue 9, pp. 1063 - 1068
The Ge1−xSn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x... 
GeSn | Photocurrent | Bowing parameter | RTCVD | 물리학
Journal Article
Journal of the Korean Physical Society, ISSN 0374-4884, 2/2014, Volume 64, Issue 3, pp. 443 - 450
Boron-doped p-type Ge layers were grown on n-type Si (100) wafers at various boron doping concentrations by using Rapid Thermal Chemical Vapor Deposition. The... 
HR-XRD | Boron | Photocurrent | RTCVD | Theoretical, Mathematical and Computational Physics | Raman | Physics, general | Physics | Particle and Nuclear Physics | CHEMICAL-VAPOR-DEPOSITION | TEMPERATURE-DEPENDENCE | PHOTODETECTORS | PHYSICS, MULTIDISCIPLINARY | GAP | 물리학
Journal Article
Journal of the Korean Physical Society, ISSN 0374-4884, 5/2014, Volume 64, Issue 10, pp. 1430 - 1436
A PIN Light Emitting Diode (LED) was fabricated from the n-Ge/i-Ge/p-Si heterojunction structure grown by using Rapid Thermal Chemical Vapor Deposition... 
Heterostructure | RTCVD | Theoretical, Mathematical and Computational Physics | Electroluminescence | Physics, general | Physics | Particle and Nuclear Physics | PIN LED | PHYSICS, MULTIDISCIPLINARY | HIGH IDEALITY FACTORS | THEORETICAL-MODEL | P-I-N | GERMANIUM | PHOTODETECTORS | PHOTODIODES | DIODES | EMISSION | GAIN | 물리학
Journal Article
Journal Article
Materials science forum, ISSN 0255-5476, 03/2008, Volume 573-574, pp. 3 - 19
The role of single wafer Rapid Thermal Processing (RTP) in semiconductor manufacturing has been steadily expanding over the last 2 decades. There are several... 
Historical review | RTCVD | High k | Silicide | Temperature control | Ultra fast ramp | RTP
Journal Article
Journal of nanoscience and nanotechnology, ISSN 1533-4880, 03/2009, Volume 9, Issue 3, pp. 2148 - 2154
Thin multi-walled carbon nanotubes (MWCNTs) were successfully synthesized by a rapid thermal chemical vapor deposition (RTCVD) method using a liquid catalyst.... 
Carbon nanotube | Thin MWCNTs | Field emission | RTCVD | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | NANOSCIENCE & NANOTECHNOLOGY | EMITTERS | CHEMISTRY, MULTIDISCIPLINARY | Field Emission | METHANE | CVD SYNTHESIS | GROWTH | Carbon Nanotube | LARGE-SCALE PRODUCTION
Journal Article
Chinese Physics B, ISSN 1674-1056, 09/2008, Volume 17, Issue 9, pp. 3448 - 3452
A new preparing technology, very high frequency plasma assisted reactive thermal chemical vapour deposition (VHFPA-RTCVD), is introduced to prepare SiGe:H thin... 
Growth rates | Plasma assisted RTCVD | Optoelectronics property | SiGe:H thin film | growth rates | GROWTH-MECHANISM | PHYSICS, MULTIDISCIPLINARY | SILICON | optoelectronics property | plasma assisted RTCVD | SiGe : H thin film
Journal Article
한국공업화학회 연구논문 초록집, 2016, Volume 2016, p. 213
Poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) is conductive polymer and promising Thermoelectric materials. We investigated taht... 
thermoelectric effect | RTCVD graphene | PEDOT:PSS
Journal Article
by Kil, YH and Kang, S and Jeong, TS and Shim, KH and Kim, DJ and Choi, YD and Kim, MJ and Kim, TS
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, ISSN 0374-4884, 05/2018, Volume 72, Issue 9, pp. 1063 - 1068
The Ge(1-x)Sn(x )layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up... 
Photocurrent | PHYSICS, MULTIDISCIPLINARY | RTCVD | ALLOYS | GeSn | Bowing parameter | ELECTROLUMINESCENCE | DEPENDENCE
Journal Article
Diamond and related materials, ISSN 0925-9635, 2003, Volume 12, Issue 3, pp. 1227 - 1230
Journal Article
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, ISSN 0374-4884, 07/2016, Volume 69, Issue 2, pp. 207 - 212
The temperature dependence of the photocurrent in Ge1-x Sn (x) layers was measured for different Sn compositions (0.00 a parts per thousand currency sign x a... 
Photocurrent | PHYSICS, MULTIDISCIPLINARY | RTCVD | ALLOYS | SI | GROWTH | GeSn | Bowing parameter | ELECTROLUMINESCENCE
Journal Article
Materials science forum, ISSN 0255-5476, 01/2005, Volume 475-479, Issue II, pp. 1231 - 1234
Various polycrystalline silicon thin films were deposited on Al2O3 ceramic substrates by RTCVD processing under different deposition conditions. The influence... 
RTCVD | Deposition processing | Poly silicon film
Journal Article
Materials science forum, ISSN 0255-5476, 05/2005, Volume 483-485, pp. 673 - 676
Thin (~10nm) Si layers have been deposited using Rapid Thermal CVD at temperatures ranging 950°C-1050°C. RTCVD deposited Si layers have been oxidized using N2O... 
O nitridation | 4H-SiC | Deposited Si | RTCVD | MOS capacitors
Journal Article
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