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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, ISSN 0278-0070, 03/2018, Volume 37, Issue 3, pp. 643 - 656
Journal Article
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, ISSN 0278-0070, 05/2015, Volume 34, Issue 5, pp. 794 - 807
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2010, Volume 31, Issue 6, pp. 615 - 617
The 1/f noise of silicon nanowire (NW) biological field-effect transistors (NW FETs with exposed channels) is characterized and compared with various... 
MOSFET | Etching | Low-frequency noise (LFN) | Nanowire (NW) | low-frequency noise (LFN) | nanowire (NW) | ANALOG APPLICATIONS | FIELD-EFFECT TRANSISTORS | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | CMOS TRANSISTORS | RTS NOISE | DEVICES | SUBTHRESHOLD | LOW-FREQUENCY NOISE | SATURATION
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 06/2017, Volume 178, pp. 52 - 55
Low-frequency noise measurements were performed on high-performance InGaAs nanowire MOSFETs. 1/f noise measurements show number fluctuations, rather than... 
InGaAs | Nanowires | 1/f noise | RTS noise | Elastic tunneling | MOSFETs | PHYSICS, APPLIED | NANOSCIENCE & NANOTECHNOLOGY | OPTICS | ENGINEERING, ELECTRICAL & ELECTRONIC | Circuit components | Metal oxide semiconductor field effect transistors | Electric properties | Engineering and Technology | Nanoteknik | Teknik | Nano Technology
Journal Article
Journal of Electronic Materials, ISSN 0361-5235, 10/2019, Volume 48, Issue 10, pp. 6113 - 6117
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 05/2011, Volume 32, Issue 5, pp. 686 - 688
The behavior of I D random telegraph signal (RTS) noise of a p-MOSFET with an advanced gate stack of HfO 2 /TaN is experimentally investigated and discussed.... 
random telegraph signal (RTS) noise | Noise | Logic gates | MOSFET circuits | Time domain analysis | Dielectrics | Noise measurement | Hafnium oxide ( hbox{HfO}_{2} ) | high- k (HK) dielectric | MOSFETs | low-frequency noise | Hafnium oxide (HfO2) | AMPLITUDE | high-k (HK) dielectric | DECANANOMETER | ENGINEERING, ELECTRICAL & ELECTRONIC | Drains | Wafers | Oxides | Stacks | Devices | Gates
Journal Article
by Wu, M and Tang, Y and Gao, W and Liu, Y and Zhang, J and Wang, Z and Chen, W and Zhang, Y
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 07/2019, Volume 66, Issue 7, pp. 1820 - 1827
This paper presents our recent study progress on proton-irradiated-induced random telegraph signal (RTS) in a high-resolution CMOS active pixel sensor (APS).... 
Protons | Temperature measurement | Semiconductor device modeling | Radiation effects | Annealing | Adaptive filters | detection method | maximum transition amplitude | CMOS active pixel sensors (APS) | Real-time systems | proton irradiation | random telegraph signal (RTS)
Journal Article
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