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Journal Article
RSC advances, ISSN 2046-2069, 2016, Volume 6, Issue 22, pp. 17867 - 17872
Amorphous zinc oxide (a-ZnO) based resistive random access memory (RRAM) Ag/a-ZnO/Pt devices were fabricated and their resistive switching characteristics investigated... 
EMISSION | CHEMISTRY, MULTIDISCIPLINARY | Electrodes | Silver | Platinum | Random access memory | Zinc oxide | Devices | Low resistance | Switching
Journal Article
Applied physics letters, ISSN 1077-3118, 2014, Volume 104, Issue 1, pp. 012403 - 1/3
We propose a write scheme for perpendicular spin-transfer torque magnetoresistive random-access memory that significantly reduces the required tunnel current density and write energy... 
TUNNEL-JUNCTIONS | PHYSICS, APPLIED | Computer memory | Reduction | Random access memory | Magnetoresistivity | Hall effect | Viability | Current density | Spintronics | MAGNETORESISTANCE | HALL EFFECT | SPIN | TUNNEL EFFECT | CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
Journal Article
Nanotechnology, ISSN 1361-6528, 2014, Volume 25, Issue 28, pp. 285201 - 10
Journal Article
Journal Article