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Journal of Applied Physics, ISSN 0021-8979, 04/2013, Volume 113, Issue 16, p. 164507
The resistive switching behaviors in the sandwiched Ti/HfO2/Pt devices with different doping condition were systematically investigated. We show that,... 
RESISTANCE | PHYSICS, APPLIED | RERAM
Journal Article
Nano Letters, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode–one resistor (1D–1R) nanopillar device architecture for SiO x -based ReRAM fabricated using nanosphere lithography... 
SiO | 1D-1R | ReRAM | Nanosphere Lithography | nanopillar
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 08/2019, Volume 58, Issue 8, p. 86503
This study aimed to fabricate a synapse-mimicking device as resistive memory with a repair function. We fabricated a structure in which Ta2O5 and MnO2 were... 
PHYSICS, APPLIED | RERAM | PLASTICITY
Journal Article
IEEE Access, ISSN 2169-3536, 11/2019, pp. 1 - 1
This paper reports an approach for monitoring aging and integrity of CMOS circuits through additively manufactured Resistive Random-Access Memory (ReRAM) based... 
Aging | ReRAM | Monitoring | Integrity
Journal Article
IEEE Computer Architecture Letters, ISSN 1556-6056, 11/2019, pp. 1 - 1
Memristors are emerging Non-Volatile Memories (NVMs) that are promising for building future memory systems. Unlike DRAM, memristors are non-volatile, i.e.,... 
ReRAM | security | Crossbar memory
Journal Article
JAPANESE JOURNAL OF APPLIED PHYSICS, ISSN 0021-4922, 04/2017, Volume 56, Issue 4
A TiOx/TiOxNy resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting... 
PHYSICS, APPLIED | RERAM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2017, Volume 110, Issue 10, p. 102902
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is... 
PHYSICS, APPLIED | OXIDES | MEMORY | CHANNEL | RERAM
Journal Article
IEEE Transactions on Circuits and Systems II: Express Briefs, ISSN 1549-7747, 08/2015, Volume 62, Issue 8, pp. 786 - 790
Journal Article
NATURE COMMUNICATIONS, ISSN 2041-1723, 09/2013, Volume 4, Issue 1, p. 2382
Electrically induced resistive switching in metal insulator-metal structures is a subject of increasing scientific interest because it is one of the... 
DEFECTS | MECHANISM | NANOFILAMENTS | TRANSITION-METAL OXIDES | MULTIDISCIPLINARY SCIENCES | RESISTIVE SWITCHING MEMORIES | DEVICE | 1ST PRINCIPLES | RERAM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2014, Volume 105, Issue 12, p. 123506
Local heat produced by an electrical path inside the memory was detected and imaged by the method "Thermal Analysis." It turned out that the visualized heat... 
OXYGEN | RESISTANCE | PHYSICS, APPLIED | RERAM
Journal Article
by Jiang, R and Du, XH and Han, ZY and Sun, WD
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 04/2015, Volume 106, Issue 17, p. 173509
Resistive switching (RS) of Ti/HfO2/Pt memory devices was studied using X-ray photoelectron spectroscopy. Hf4+ monotonously decreases with depth increasing... 
ELECTROLYTE-BASED RERAM | CONDUCTIVE FILAMENTS | PHYSICS, APPLIED
Journal Article
Mathematical and Computer Modelling, ISSN 0895-7177, 07/2013, Volume 58, Issue 1-2, pp. 275 - 281
First principles density functional theory calculations were employed to study the band structure of reduced rutile TiO and the implications of oxygen vacancy... 
Oxygen vacancy filament | Density functional theory | [formula omitted] ReRAM | ReRAM | TiO | MATHEMATICS, APPLIED | 1ST-PRINCIPLES CALCULATIONS | TiO2 ReRAM
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2014, Volume 35, Issue 1, pp. 39 - 41
Journal Article
Thin Solid Films, ISSN 0040-6090, 04/2013, Volume 533, pp. 24 - 28
In this work, cells based on TiN/TaO /TiN metal–insulator–metal structure, fabricated in a 65 nm complementary metal oxide semiconductor technology, are... 
MTP | ReRAM | Tantalum oxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2015, Volume 107, Issue 7, p. 73503
The position of the conductive filament (CF) and the heating behaviour during a switching process in nonpolar and bipolar resistive random access memories... 
RESISTANCE | PHYSICS, APPLIED | RRAM | NANOFILAMENTS | RERAM
Journal Article
Journal of Nanoscience and Nanotechnology, ISSN 1533-4880, 10/2015, Volume 15, Issue 10, pp. 7569 - 7572
Journal Article
by Chen, C and Song, C and Yang, J and Zeng, F and Pan, F
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 06/2012, Volume 100, Issue 25, p. 253509
We investigate the resistive switching mechanism and the thermal stability in room temperature-fabricated nonvolatile memory consisting of W/TaOx/Pt. By... 
PHYSICS, APPLIED | MECHANISM | GROWTH | BOTTOM | MEMORY DEVICES | CHALLENGES | RERAM
Journal Article
by Son, M and Lee, J and Park, J and Shin, J and Choi, G and Jung, S and Lee, W and Kim, S and Park, S and Hwang, H
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 11/2011, Volume 32, Issue 11, pp. 1579 - 1581
We herein present a nanoscale vanadium oxide (VO2) device with excellent selector characteristics such as a high ON/ OFF ratio (> 50), fast switching speed (<... 
vanadium oxide (VO2) | selection device | resistive random access memory (ReRAM) | Nanoscale device | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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