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Nanotechnology, ISSN 0957-4484, 09/2015, Volume 26, Issue 41, p. 415202
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2017, Volume 64, Issue 1, pp. 312 - 318
We report a monolithically integrated 3-D metal-oxide memristor crossbar circuit suitable for analog, and in particular, neuromorphic computing applications.... 
Electrodes | Fabrication | Planarization | 3-D integrated circuits | Neuromorphics | Memristors | analog processing circuits | Threshold voltage | Tuning | nonvolatile memory | memristors | CIRCUITS | PHYSICS, APPLIED | DEVICES | LOGIC | RERAM | ENGINEERING, ELECTRICAL & ELECTRONIC | Titanium oxides
Journal Article
Solid State Electronics, ISSN 0038-1101, 01/2014, Volume 91, pp. 67 - 73
50 nm HfO resistive memory cells were measured by 6 × 6 verification variations to determine the optimal method to achieve 10 endurance and yield. The... 
Program verify | ReRAM | Cycling | Endurance
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2017, Volume 56, Issue 4
A TiOx/TiOxNy resistive random access memory (ReRAM) with a sidewall bottom electrode (BE) is demonstrated for the first time. Several interesting... 
BUFFER LAYER | DEVICES | PHYSICS, APPLIED | RERAM
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2018, Volume 113, Issue 18, p. 183501
We compared the resistive switching performances of built-in graded oxygen concentration TaOx films and uniform TaOx films under the 100 μA compliance current.... 
TRANSITION | PHYSICS, APPLIED | FILMS | ELECTROLYTE-BASED RERAM | MECHANISM | CHANNEL | DEVICE | RRAM | CONDUCTIVE FILAMENTS | MEMRISTOR
Journal Article
Thin Solid Films, ISSN 0040-6090, 02/2013, Volume 529, pp. 347 - 351
Among the next generation nonvolatile memories, a resistive random access memory is promising due to its simple structure and ultra-fast speed. Pr Ca MnO is an... 
PCMO | CMO | Resistive switching | ReRAM | Bi-layer
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 2009, Volume 30, Issue 5, pp. 457 - 459
Journal Article
SCIENTIFIC REPORTS, ISSN 2045-2322, 10/2013, Volume 3, Issue 1, p. 2929
Resistive switching (RS) based on the formation and rupture of conductive filament (CF) is promising in novel memory and logic device applications.... 
DRIVEN ION MIGRATION | ELECTROLYTE-BASED RERAM | MECHANISM | STATISTICS | MULTIDISCIPLINARY SCIENCES | RESISTANCE | DEVICES | PARAMETER VARIATION | RESISTIVE-SWITCHING MEMORY | MODEL | CONDUCTIVE FILAMENTS | Conductance | Dissolution | Voltage | Rupture
Journal Article
Applied Physics Letters, ISSN 0003-6951, 02/2017, Volume 110, Issue 9, p. 93507
In this study, stable nonpolar resistive switching characteristics in Cu/Cu-dispersed ZrO2/Pt electrochemical metallization (ECM) memory devices were reported... 
COEXISTENCE | PHYSICS, APPLIED | FILMS | ELECTROLYTE-BASED RERAM | CONDUCTIVE FILAMENTS | BIPOLAR | BEHAVIORS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 06/2015, Volume 36, Issue 6, pp. 567 - 569
Journal Article
Nature Communications, ISSN 2041-1723, 10/2015, Volume 6, Issue 1, p. 8610
The demand for highly scalable, low-power devices for data storage and logic operations is strongly stimulating research into resistive switching as a novel... 
THIN-FILMS | OXYGEN | OXIDE | MULTIDISCIPLINARY SCIENCES | RESISTIVE SWITCHING MEMORIES | DATA RETENTION | SURFACE | FE-DOPED SRTIO3 | DEFECT CHEMISTRY | STRONTIUM-TITANATE | TAOX BIPOLAR-RERAM
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 12/2019, p. 153247
Journal Article
NANO LETTERS, ISSN 1530-6984, 02/2014, Volume 14, Issue 2, pp. 813 - 818
We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography... 
PHYSICS, CONDENSED MATTER | NANOCROSSBAR | PHYSICS, APPLIED | OXIDE | MATERIALS SCIENCE, MULTIDISCIPLINARY | DEVICE | CHEMISTRY, PHYSICAL | 1D-1R | NANOSCIENCE & NANOTECHNOLOGY | Nanosphere Lithography | CHEMISTRY, MULTIDISCIPLINARY | nanopillar | SiOx | ReRAM
Journal Article
Microelectronic Engineering, ISSN 0167-9317, 11/2015, Volume 147, pp. 318 - 320
In this paper, a multi-layer NbO x selector is fabricated and compared with a single-layer NbO x selector. The multi-layer NbO x selector exhibits better... 
Niobium oxide | MIT | ReRAM | Metal Insulator Transition | Niobium | Selector
Journal Article
Applied Surface Science, ISSN 0169-4332, 03/2012, Volume 258, Issue 10, pp. 4588 - 4591
► We employed ZnO film as buffer layer to improve resistive switching characteristics. ► The operation voltages were very low. ► A high-voltage forming process... 
ReRAM devices | GZO | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MEMORY | CHEMISTRY, PHYSICAL | MATERIALS SCIENCE, COATINGS & FILMS | RERAM | Zinc oxide
Journal Article
Applied Physics Letters, ISSN 0003-6951, 11/2018, Volume 113, Issue 22, p. 223503
We developed an intensity-modulated light-emitting device (LED) by integrating a p-GaN/n-ZnO heterojunction with multilevel resistive random access memory... 
GRAPHENE OXIDE | PHYSICS, APPLIED | UNIFORMITY | GROWTH | IMPROVEMENT | MOVEMENT | DEVICES | MECHANISMS | EMISSION | RESISTIVE SWITCHING MEMORY | RERAM
Journal Article
ACS Applied Materials and Interfaces, ISSN 1944-8244, 09/2018, Volume 10, Issue 35, pp. 29766 - 29778
Redox-type resistive random access memories based on transition-metal oxides are studied as adjustable two-terminal devices for integrated network applications... 
interfacial oxygen exchange | bipolar-type resistive switching | ReRAM | tunneling | switching polarity | TiO | Schottky barrier lowering
Journal Article
Applied Physics Express, ISSN 1882-0778, 05/2017, Volume 10, Issue 5, p. 54101
The forming process is a necessary and irreversible process to activate the resistance switching behavior in a resistance random access memory (RRAM) device.... 
PHYSICS, APPLIED | DEVICES | RRAM | GATE | DIODE | ARRAYS | MEMRISTOR | RERAM
Journal Article
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