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Publication Date Publication Date
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1989, ISBN 9780849347047, 234 p., [3] p. of plates
The object of this book is to review and to discuss some important applications of polymers in electronics. The first three chapters discuss the current... 
Electronics | Polymers | Materials | Polymer Science
Book
RSC advances, ISSN 2046-2069, 04/2018, Volume 8, Issue 27, pp. 1529 - 1529
Correction for 'EUV photofragmentation study of hybrid nonchemically amplified resists containing antimony as an absorption enhancer' by Cleverson Alves da... 
Amplification | Antimony | Absorption | Resists
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2009, Volume 7273
Two different pattern curing techniques were developed to stabilize first lithographic images for the single-etch double patterning process. The first method... 
Thermal cure resist | Resist stabilization | Resist curing | Resist freezing | Resist hardening | Surface curing agent | Double patterning
Conference Proceeding
2017, ISBN 1869143140, 302 pages
The cross-cultural usage of a particular cloth type called 'blueprint' is central to South African cultural history. Known locally as seshoeshoe or... 
Textile fabrics | Clothing and dress | Influence | Indigo | Indian textile fabrics | Social aspects | History | Textile printing | Chintz
Book
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2009, Volume 7273, Issue 1
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7969
This paper describes a metal oxide patternable hardmask designed for EUV lithography. The material has imaged 15-nm half-pitch by projection EUV exposure on... 
Extreme Ultraviolet Lithography | inorganic negative tone resist | EUV resist | EUVL | patternable hardmask | Metal oxides | Platforms | Absorption | Lithography | Variability | Resists | Projection | Film thickness
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2010, Volume 7641
In this paper we will demonstrate how a 3D physical patterning model can act as a forensic tool for OPC and ground-rule development. We discuss examples where... 
Resist profile | Three dimensional resist simulations | Resist model | Physical model | Resist calibration | Discontinuity | Patterning | Resists | Tools | Grounds | Cycle time | Contact | Three dimensional
Conference Proceeding
2017 IEEE Symposium on Security and Privacy (SP), ISSN 1081-6011, 05/2017, pp. 39 - 57
Neural networks provide state-of-the-art results for most machine learning tasks. Unfortunately, neural networks are vulnerable to adversarial examples: given... 
Measurement | Neural networks | Speech recognition | Resists | Robustness | Malware | Security
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2010, Volume 7636
Line edge roughness evolutions in EUV resist patterns are investigated. Three dimensional scanning electron microscopy images show the pattern sidewall... 
inorganic underlayers | 3D-SEM | ultrathin resists | EUV | resist sidewall | LER | resist-substrate interface | sidewall roughness | Platforms | Correlation | Images | Resists | Roughness | Evolution | Stacks | Film thickness
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7972
The increasing density of semiconductor devices has required the development of high resolution exposure techniques. The miniaturization of feature sizes has... 
Chemically amplified resist | Resist sensitivity | Dissociative electron attachment | 6.7 nm | EUV resist | 13.5 nm | Extreme ultraviolet resist | Multilayers | Wavelengths | Pilots | Lithography | Mathematical analysis | Resists | Miniaturization | Density
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2012, Volume 8323
To keep on with scaling down of nanoelectronic components novel lithographic approaches are required. The direct, positive-tone lithography of calixarene... 
closed loop lithography | self-developing resist | Scanning Probe Lithography | molecular resist | nanofabrication | calixarene | nanoprobe maskless lithography | SPL | Atomic force microscopy | Scanning | Nanocomposites | Calixarenes | Lithography | Resists | Nanomaterials | Nanostructure
Conference Proceeding
Jpn J Appl Phys, ISSN 0021-4922, 1/2013, Volume 52, Issue 1, pp. 010002 - 010002-14
Extreme ultraviolet (EUV) radiation, the wavelength of which is 13.5 nm, is the most promising exposure source for next-generation semiconductor lithography.... 
Physical Sciences | Physics | Science & Technology | Physics, Applied | Wavelengths | Semiconductors | Lithography | Tradeoffs | Resists | Roughness | Exposure | Ultraviolet
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7972
As resist films become thinner, so as to reduce problems of aspect ratio related pattern collapse at high-resolution, it is becoming increasingly difficult to... 
Fullerene | Molecular resist | Chemically amplified resist | Silicon | Icp etching | Electron beam lithography | Inductively coupled plasma | Resists | Fullerenes | Etching | Selectivity | Aspect ratio
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7972
Non-conventional chemically amplified (CA) negative resist for EUV lithography was studied. We have designed negative-tone EUV resist based on thiol-yne... 
EUV resist | Thiol/yne reaction | Negative resist | Poly(4-hydroxystyrene) | Non-conventional CA resist | Amplification | Carbon-carbon composites | Lithography | Resists | Bonding | Standards | Radicals | Bearing
Conference Proceeding
Jpn J Appl Phys, ISSN 0021-4922, 7/2013, Volume 52, Issue 7, pp. 076502 - 076502-6
With the approach of the realization of extreme ultraviolet (EUV) lithography, practical issues such as the defects of resist patterns have attracted... 
Lithography | Resists | Chemical reactions | Standard deviation | Stochasticity | Ultraviolet | Dissolution | Defects
Journal Article
Chemical communications (Cambridge, England), ISSN 1359-7345, 7/2010, Volume 46, Issue 31, pp. 5634 - 5652
Self-assembled monolayers (SAMs) have received increasing attention since their introduction 30 years ago. Soon it was discovered that they can be used as... 
Physical Sciences | Chemistry | Chemistry, Multidisciplinary | Science & Technology | Silanes | Self-assembled monolayers | Semiconductors | Precursors | Surface reactions | Resists | Surface chemistry | Photolithography
Journal Article
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7972
Although Extreme ultraviolet lithography (EUVL) is now well into the commercialization phase, critical challenges remain in the development of EUV resist... 
Extreme ultraviolet | Nanolithography | Lithography | Photoresist | Amplification | Meetings | Resists | Roughness | Ultraviolet | Commercialization
Conference Proceeding
Proceedings of SPIE - The International Society for Optical Engineering, ISSN 0277-786X, 2011, Volume 7972
Chemically amplified resists are critical for sub-30 nm photolithography. As feature sizes decrease, challenges continue to arise in controlling the aerial... 
Resist flow | Chemically amplified resist | Hardbake | Line width roughness | Laser spike annealing | Roughness | Amplification | Annealing | Reduction | Resists | Images | Light water reactors
Conference Proceeding
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