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1994, 3rd ed., ISBN 9781884932502, xvi, 687
This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations,... 
Metal semiconductor field-effect transistors | Gallium arsenide semiconductors | Electronics & communications engineering
Book
1989, Electronic & electrical engineering research studies. III-V compound technology series., ISBN 9780471923626, Volume 1, xiv, 218
Book
Small, ISSN 1613-6810, 03/2018, Volume 14, Issue 11, pp. 1870048 - n/a
In article number 1703044 , Sang‐Jae Kim and co‐workers demonstrate a flexible ZnO photodetector based on unique microarchitectural influences (e.g.,... 
photodetectors | Schottky barrier heights | ZnO microarchitectures | semiconductors | piezo‐phototronic effect | Laws, regulations and rules | Zinc oxide
Journal Article
NANO LETTERS, ISSN 1530-6984, 06/2014, Volume 14, Issue 6, pp. 3594 - 3601
We report the fabrication of both n-type and p-type WSe2 field-effect transistors with hexagonal boron nitride passivated channels and ionic-liquid (IL)-gated... 
WSe2 | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MoS2 | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | ionic-liquid gate | ELECTRONIC TRANSPORT | CHEMISTRY, MULTIDISCIPLINARY | graphene | TRANSITION | HYSTERESIS | field-effect transistor | MONOLAYER | Schottky barrier
Journal Article
2019, 1, IEEE Press Series on Microelectronic Systems, ISBN 9781119523536, 496
<p><b>A comprehensive reference on current JLFET methods, techniques, and research</b> <p>Advancements in transistor technology have... 
Components, Circuits, Devices and Systems | Computing and Processing | Power, Energy and Industry Applications | Metal semiconductor field-effect transistors
eBook
Science, ISSN 0036-8075, 04/2009, Volume 324, Issue 5923, pp. 63 - 66
Unidirectional electric current flow, such as that found in a diode, is essential for modern electronics. It usually occurs at asymmetric interfaces such as... 
MULTIDISCIPLINARY SCIENCES | OPTICAL RECTIFICATION | Electrical currents | Materials science | Photovoltaic cells | Semiconductors | Crystals
Journal Article
Nature, ISSN 0028-0836, 08/2003, Volume 424, Issue 6949, pp. 654 - 657
A common feature of the single-walled carbon-nanotube field-effect transistors fabricated to date has been the presence of a Schottky barrier at the... 
DEVICES | MULTIDISCIPLINARY SCIENCES | Ballistics | Transistors | Carbon | Nanotechnology
Journal Article
Journal of Physics and Chemistry of Solids, ISSN 0022-3697, 05/2017, Volume 104, pp. 281 - 285
50 nm ZnO nanowires were grown on indium tin oxide (ITO) coated poly ethylene terephthalate (PET) substrates by adapting facile aqueous growth technique using... 
ZnO nanowires | Schottky contact | Energy Harvester | Piezoelectric Potential | PHYSICS, CONDENSED MATTER | WIRES | NANOTUBE | CHEMISTRY, MULTIDISCIPLINARY | Indium | Zinc oxide | Polyethylene | Pets | Electric power production
Journal Article
ACS NANO, ISSN 1936-0851, 06/2014, Volume 8, Issue 6, pp. 5790 - 5798
Field-effect transistor (FET) devices composed of a MoS2-graphene heterostructure can combine the advantages of high carrier mobility in graphene with the... 
LIMITS | MATERIALS SCIENCE, MULTIDISCIPLINARY | GRAPHENE | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | MoS2-graphene | LAYERS | TRANSITION | TRANSISTORS | field-effect transistor devices | GROWTH | field-effect mobility | MONOLAYER | Schottky barrier modulation
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 03/2017, Volume 100, Issue 3, pp. 1037 - 1043
The impact of the (Ba + Sr)/Ti (A/B) ratio on the microwave‐tunable characteristics of diffuse phase transition ( DPT ) ferroelectric Ba 0.6 Sr 0.4 TiO 3 (0.6‐... 
microwaves | ferroelectricity/ferroelectric materials | polarization | Polarization | Ferroelectricity/ferroelectric materials | Microwaves | THIN-FILMS | SINGLE-CRYSTALS | BATIO3 | DIELECTRIC-PROPERTIES | DEPOSITION | DEVICES | BARIUM-TITANATE | GRAIN-GROWTH | MATERIALS SCIENCE, CERAMICS | Ceramics | Ceramic materials | Analysis | Electric properties | Dielectrics | Phase transitions
Journal Article
by Ma, J and Yoo, G
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, ISSN 1533-4880, 01/2020, Volume 20, Issue 1, pp. 516 - 519
We fabricate top-gate beta-Ga2O3 nanomembrane metal-semiconductor field-effect transistor (MESFET) using a mechanical exfoliation method, and investigate its... 
Gallium-Oxide | PHYSICS, CONDENSED MATTER | Top-Gate | MESFET | PHYSICS, APPLIED | Nanomembrane | MATERIALS SCIENCE, MULTIDISCIPLINARY | POWER | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | Schottky diodes | Gallium oxides | Electrical properties | Semiconductor devices | Electric contacts | Field effect transistors | Transistors | Transconductance
Journal Article
ACS Nano, ISSN 1936-0851, 10/2014, Volume 8, Issue 10, pp. 10035 - 10042
Journal Article