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Nano Letters, ISSN 1530-6984, 05/2013, Volume 13, Issue 5, pp. 2182 - 2188
We report the manufacture of novel graphene diode sensors (GDS), which are composed of monolayer graphene on silicon substrates, allowing exposure to liquids and gases... 
chemical sensor | chemical doping of graphene | Graphene Schottky diode | Schottky barrier height | ideality factor | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | TRANSISTORS | TRANSPORT | GAS | Platforms | Liquids | Graphene | Silicon substrates | Sensors | Charge transfer | Diodes | Tuning | Letter
Journal Article
Journal of applied physics, ISSN 1089-7550, 2016, Volume 119, Issue 10, p. 103102
.... Current-voltage characteristics of the diodes did not indicate avalanche breakdown, which excludes carrier multiplication by impact ionization as the source for gain... 
PHYSICS, APPLIED | Diodes, Schottky-barrier | Research | Photoconductivity | Gallium compounds | Optical properties | Electric properties | SOLAR ENERGY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 10/2004, Volume 85, Issue 15, pp. 3107 - 3109
Pt Schottky diodes were formed on single ZnO nanowires grown by site-selective molecular-beam epitaxy and then transferred to SiO2-coated Si substrates... 
ZNO NANORODS | OXIDE NANOWIRES | PHYSICS, APPLIED | INDIUM | GROWTH | INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY | ILLUMINANCE | ELECTRONS | ULTRAVIOLET RADIATION | SUBSTRATES | PLATINUM | QUANTUM WIRES | CHARGED-PARTICLE TRANSPORT | ELECTRIC POTENTIAL | MOLECULAR BEAM EPITAXY | SCHOTTKY BARRIER DIODES | SILICON OXIDES | ZINC OXIDES
Journal Article
Applied physics letters, ISSN 1077-3118, 2016, Volume 109, Issue 2, p. 023507
Journal Article
IEEE transactions on nanotechnology, ISSN 1941-0085, 2018, Volume 17, Issue 6, pp. 1133 - 1137
Journal Article
Applied physics letters, ISSN 1077-3118, 2014, Volume 104, Issue 5, p. 052105
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2014, Volume 104, Issue 7, p. 72103
The hydrogen detection characteristics of semipolar (112¯2) plane GaN Schottky diodes were investigated and compared to c-plane Ga- and N-polar and nonpolar a-plane (112¯0) GaN diodes... 
Schottky diodes | Polarity | Current voltage characteristics | Nitrogen | Hydrogen | Gallium nitrides | HYDROGEN | ELECTRIC CURRENTS | NITROGEN | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | COMPARATIVE EVALUATIONS | ELECTRIC CONDUCTIVITY | SENSORS | SCHOTTKY BARRIER DIODES | GALLIUM NITRIDES | SURFACES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2014, Volume 105, Issue 7, p. 73103
The Schottky diodes based on graphene/GaN interface are fabricated and demonstrated for the dual-wavelength photodetection of ultraviolet (UV) and green lights... 
DEVICES | PHYSICS, APPLIED | HIGH-SPEED | GAN | FIELD-EFFECT TRANSISTORS | SCHOTTKY-BARRIER | ILLUMINANCE | ULTRAVIOLET RADIATION | WAVELENGTHS | DIFFUSION BARRIERS | ELECTRODES | GRAPHENE | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | PHOTODETECTORS | PHOTOEMISSION | INTERFACES | SCHOTTKY BARRIER DIODES | VISIBLE RADIATION | GALLIUM NITRIDES
Journal Article
Applied Physics Letters, ISSN 0003-6951, 12/2009, Volume 95, Issue 22, pp. 222103 - 222103-3
...), or 4H-silicon carbide (4H-SiC). Near room temperature, the forward-bias diode characteristics are well described by thermionic emission, and the extracted barrier heights, which are confirmed by capacitance voltage measurements... 
thermionic emission | gallium arsenide | Schottky diodes | electrodes | PHYSICS, APPLIED | semiconductor-metal boundaries | Schottky barriers | GRAPHENE | graphite | elemental semiconductors | silicon | silicon compounds | wide band gap semiconductors | capacitance measurement | III-V semiconductors | OHMIC CONTACT
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 10/2013, Volume 48, Issue 10, pp. 2296 - 2308
Schottky-barrier diodes (SBD's) fabricated in CMOS without process modification are shown to be suitable for active THz imaging applications... 
Multiplexing | Schottky diodes | Noise | lens-less | image sensor | on-chip patch antenna | responsivity | CMOS | terahertz | Imaging | Detectors | NEP | CMOS integrated circuits | Arrays | Schottky barrier diode | detector | imaging | NOISE | RADIATION | ENGINEERING, ELECTRICAL & ELECTRONIC | FOCAL-PLANE ARRAY | WAVE DETECTION | TECHNOLOGY | Modulation | Diodes | Pixels | Lenses
Journal Article
Advanced functional materials, ISSN 1616-301X, 2016, Volume 26, Issue 31, pp. 5741 - 5747
Journal Article
physica status solidi (a), ISSN 1862-6300, 05/2018, Volume 215, Issue 9, pp. 1700645 - n/a
Journal Article
Diamond and related materials, ISSN 0925-9635, 2015, Volume 57, pp. 32 - 36
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 09/2016, Volume 31, Issue 11, p. 115007
...: PSS/ZnO Schottky barrier diodes (SBDs) grown on glass substrates. To understand the current conduction mechanism, the current-voltage-temperature characteristics of PEDOT... 
thermionic emission | Schottky barrier diodes | zinc oxide | PEDOT:PSS | PHYSICS, CONDENSED MATTER | SOLAR-CELLS | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRICAL-PROPERTIES | ELECTRODES | SERIES RESISTANCE | PEDOT: PSS | ENGINEERING, ELECTRICAL & ELECTRONIC | TRANSISTORS | EXTRACTION | FREQUENCY | ZNO
Journal Article