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Advanced Materials, ISSN 0935-9648, 03/2011, Volume 23, Issue 10, pp. 1277 - 1281
Journal Article
1984, ISBN 0442208731, xv, 759
Book
IEEE Electron Device Letters, ISSN 0741-3106, 08/2002, Volume 23, Issue 8, pp. 473 - 475
For the first time, we have successfully demonstrated the feasibility of integrating a high-permittivity (/kappa/) gate dielectric material zirconium oxide... 
High-permittivity dielectric | Germanium | Zirconium oxide | Surface passivation | MOS devices | Metal oxide semiconductors | Equivalence | Capacitors | Zirconium oxides | Oxides | Dielectrics | Devices | Gates
Journal Article
SAE technical paper series, Volume 2000-01-3652.
This paper describes a ultra high power IGBT inverter. This inverter is the core component of a power supply intended to charge a 6.66 μF capacitor to 30kV... 
Semiconductors | Engines
eJournal
Journal of Power Sources, ISSN 0378-7753, 09/2016, Volume 327, pp. 297 - 318
Journal Article
Electrochimica Acta, ISSN 0013-4686, 09/2014, Volume 141, pp. 203 - 211
Journal Article
Journal of Materials Chemistry A, ISSN 2050-7488, 05/2015, Volume 3, Issue 19, pp. 10519 - 10525
Although the NiO nanostructures potentially hold outstanding electrochemical activity in theory, dual enhancements in both electrical conductivity and... 
SUPERCAPACITORS | ENERGY & FUELS | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | ELECTRODES | CHEMISTRY, PHYSICAL | NANOWIRE ARRAYS | HIGH-POWER | NIO | GROWTH | ENERGY-STORAGE | OXIDE-FILMS | 3D GRAPHENE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2019, Volume 66, Issue 9, pp. 3967 - 3972
Journal Article