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IEEE Transactions on Nuclear Science, ISSN 0018-9499, 11/2019, pp. 1 - 1
This paper proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP... 
proton-induced SEU | electron-induced SEU | heavy ion-induced SEU | Single Event Upset | DDR SRAM
Journal Article
1967, Studien zur Geschichte und Kultur des Altertums, Bd. 4, Heft 1, 43
Book
1894, Cambridge Antiquarian Society (Cambridge, England) Octavo publications, Volume 27, viii, 216
Book
by Jin, XM and Chen, W and Li, JL and Qi, C and Guo, XQ and Li, RB and Liu, Y
CHINESE PHYSICS B, ISSN 1674-1056, 09/2019, Volume 28, Issue 10, p. 104212
This paper presents new neutron-induced single event upset (SEU) data on the SRAM devices with the technology nodes from 40 nm to 500 nm due to spallation,... 
SEU | PHYSICS, MULTIDISCIPLINARY | cross-section | INDUCED SEU | neutron SRAM | SIMULATIONS | SRAMS
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 05/2014, Volume 61, Issue 5, pp. 2493 - 2503
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 3369 - 3380
Journal Article
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 07/2019, Volume 66, Issue 7, pp. 1427 - 1432
At the 14-/16-nm FinFET technology node, experimental heavy-ion single-event upset (SEU) cross sections have been obtained for a D flip-flop (DFF) with... 
Radiation effects | SEU | Single event upsets | FinFET | supply voltage | FinFETs | Mathematical model | sensitive area | single-event upset (SEU) cross section | Integrated circuit modeling | Flip-flops | NUCLEAR SCIENCE & TECHNOLOGY | PLANAR | SRAMS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
1997, Cultura (Catalonia (Spain). Departament de Cultura). Patrimoni arquitectònic, ISBN 8439944139, 119
Book
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