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Physical Review Letters, ISSN 0031-9007, 09/2012, Volume 109, Issue 10, p. 106101
The interface between a crystalline and a vitreous phase of a thin metal supported silica film was studied by low temperature scanning tunneling microscopy.... 
TRANSMISSION ELECTRON-MICROSCOPY | TRANSITION | MOLECULAR-DYNAMICS | ATOMIC-STRUCTURE | SI-SIO2 INTERFACE | OXIDE | PHYSICS, MULTIDISCIPLINARY | IMAGES | MODEL | SIMULATION | QUARTZ
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 2007, Volume 102, Issue 8, p. 81301
Internal photoemission spectroscopy provides the most straightforward way to characterize the relative energies of electron states at interfaces of insulators... 
THIN-FILMS | ENERGY-BAND DIAGRAM | PHYSICS, APPLIED | QUANTUM-MECHANICAL TRANSMISSION | ALUMINUM-OXIDE | SI-SIO2 INTERFACE | GATE DIELECTRICS | RAY PHOTOELECTRON-SPECTROSCOPY | LAYER-DEPOSITED AL2O3 | SILICON DIOXIDE | ELECTRONIC-STRUCTURE
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2015, Volume 106, Issue 16, p. 163503
A capture cross section value is often assigned to Si-SiO2 interface defects. Using a kinetic variation of the charge pumping technique and transition state... 
PHYSICS, APPLIED | SI-SIO2 INTERFACE | VARIATIONS | CROSS SECTIONS | SILICON | INTERFACES | CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY | PUMPING | CAPTURE | CRYSTAL DEFECTS | SILICON OXIDES
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 03/2014, Volume 115, Issue 9, p. 93707
Journal Article
by Kim, GM and Oh, YJ and Chang, KJ
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 12/2013, Volume 114, Issue 22, p. 223705
We perform first-principles density functional calculations to find the migration pathway and barrier for B diffusion at the Si/SiO2 interface. For various... 
ENERGY | PHYSICS, APPLIED | SI-SIO2 INTERFACE | MODELS | AB-INITIO | SILICON | FINDING SADDLE-POINTS | SEGREGATION | Boron | Crystal defects | First principles | Diffusion barriers | Migration | Quartz | Bonding | Silicon dioxide | Defects | Barriers
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 07/2005, Volume 87, Issue 3, p. 32107
Combined electrical and electron spin resonance analysis reveals dramatic differences in the interface defect properties of the (100)Ge/GeOxNy/HfO2 and... 
HFO2 | ELECTRON-SPIN-RESONANCE | STATES | PHYSICS, APPLIED | GERMANIUM | AMORPHOUS-SILICON | PARAMAGNETIC DEFECTS | SI/SIO2
Journal Article
Physical Review Letters, ISSN 0031-9007, 05/2000, Volume 84, Issue 19, pp. 4393 - 4396
Using a Monte Carlo approach, we identify low-energy structures for the (001)-oriented Si-SiO2 interface. The optimal interface structure found consists of an... 
OXIDATION | SI/SIO2 INTERFACE | MODELS | PHYSICS, MULTIDISCIPLINARY | SIO2/SI INTERFACE
Journal Article
Current Applied Physics, ISSN 1567-1739, 07/2016, Volume 16, Issue 7, pp. 805 - 808
We conduct a first-principles total energy calculation of the atomic and electronic structures of the N defects near the Si(001)/ –quartz interface. We find... 
Silicon-induced gap state | N defect | Si/SiO2 interface | Interface electronic structure | Si/SiO | interface | Spectroscopy | Energy gap | Electronic structure | Mathematical analysis | Silicon | Atomic structure | Valence band | Defects
Journal Article
Physical Review Letters, ISSN 0031-9007, 03/2013, Volume 110, Issue 13, p. 136803
Combining orientation dependent electrically detected magnetic resonance and g tensor calculations based on density functional theory we assign microscopic... 
ELECTRON-SPIN-RESONANCE | TRANSPORT | DEFECTS | OXIDE | PHYSICS, MULTIDISCIPLINARY | BAND OFFSETS | SI/SIO2 INTERFACE | CENTERS | DETECTED MAGNETIC-RESONANCE | CHARGE
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 07/2006, Volume 53, Issue 7, pp. 1583 - 1592
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2017, Volume 121, Issue 13, p. 135301
The recombination of electric charge carriers at semiconductor surfaces continues to be a limiting factor in achieving high performance optoelectronic devices,... 
PHYSICS, APPLIED | SI-SIO2 INTERFACE | CHEMICAL-VAPOR-DEPOSITION | SILICON SOLAR-CELLS | SURFACE PASSIVATION | SIO2-SI INTERFACE | ELECTRICAL-PROPERTIES | STATE PARAMETERS | CARRIER RECOMBINATION | FIELD-EFFECT PASSIVATION | CRYSTALLINE SILICON | Silicon compounds | Research | Optical properties | Electric insulators | Electric properties
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 16, p. 161582
Electron spin resonance (ESR) spectra of surface and interface recombination centers recently observed on (001) silicon wafers, labeled Pm and KU1, were... 
POINT-DEFECTS | RECOMBINATION | PARAMAGNETIC-RESONANCE | STATES | PHYSICS, APPLIED | SI-SIO2 INTERFACE | SPECTROSCOPY | IRRADIATED SILICON | DEPENDENT MICROWAVE PHOTOCONDUCTIVITY
Journal Article
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 09/2013, Volume 721, pp. 26 - 34
Using the multi-channel transient current technique the currents induced by electron–hole pairs, produced by a focussed sub-nanosecond laser of 660 nm... 
X-ray-radiation damage | Si–SiO2 interface | Silicon strip sensors | Charge losses | XFEL | Accumulation layer | interface | Si-SiO | DETECTORS | INSTRUMENTS & INSTRUMENTATION | SPECTROSCOPY | NUCLEAR SCIENCE & TECHNOLOGY | Si-SiO2 interface | SILICON | PHYSICS, PARTICLES & FIELDS | Physics - Instrumentation and Detectors
Journal Article