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RSC Advances, ISSN 2046-2069, 01/2019, Volume 9, Issue 5, pp. 2426 - 243
Morphology of 〈111〉-oriented 3C-SiC films was transformed from mosaic to whisker to cauliflower-like with the increased flow rate ( f ) of hexametyldisilane... 
CHEMICAL-VAPOR-DEPOSITION | HEXAMETHYLDISILANE | BETA-SIC FILMS | CHEMISTRY, MULTIDISCIPLINARY | EPITAXIAL-GROWTH | CERAMICS | Organic chemistry | Pyramids | Flow velocity | Aspect ratio | Chemical vapor deposition | Morphology
Journal Article
Thin Solid Films, ISSN 0040-6090, 02/2010, Volume 518, Issue 8, pp. 1851 - 1878
This article is a critical review of the M AX phases ("MAX phases", where n = 1, 2, or 3) from a materials science perspective. MAX phases are a class of... 
Nanolaminate | Ti | Physical vapor deposition | AlC | Ceramics | SiC | Carbides | Sputtering | Chemistry with specialization in Inorganic Chemistry | Teknik och teknologier | Ti3SiC2 | Ti2AlC | Chemical Sciences | TEKNIKVETENSKAP | Engineering and Technology | Chemistry | Naturvetenskap | Kemi | Oorganisk kemi | Natural Sciences | Inorganic Chemistry | TECHNOLOGY | Kemi med inriktning mot oorganisk kemi
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 04/2017, Volume 100, Issue 4, pp. 1634 - 1641
β‐SiC thin films have been epitaxially grown on Si(001) substrates by laser chemical vapor deposition. The epitaxial relationship was... 
silicon carbide | chemical vapor deposition | THIN-FILMS | DEFECTS | GROWTH | 3C-SIC FILMS | RAMAN | BETA-SIC FILMS | MATERIALS SCIENCE, CERAMICS | TWIN | Planes | Lasers | Epitaxial growth | Ceramics | Chemical vapor deposition | Cross sections | Substrates | Deposition
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 08/2019, Volume 102, Issue 8, pp. 4480 - 4491
Previously, we found 3C‐SiC films favor to grow in orientation on Si (110) (https://doi.org/10.1111/jace.15260). However, epitaxial growth of thick ‐3C‐SiC is... 
interfacial roughness | orientation | heteroepitaxial growth | 3C‐SiC films | LCVD | 3C-SiC films | Power electronics | Silicon carbide | Chemical vapor deposition | Epitaxy | Organic chemistry | Transmission electron microscopy | Nucleation | Lasers | Thick films | Silicon substrates | Epitaxial growth
Journal Article
Journal Article
Japanese Journal of Applied Physics, ISSN 0021-4922, 06/2017, Volume 56, Issue 6, p. 6
High-quality crystalline nano-thin SiC films on Si substrates were prepared by carbonization of polyimide (PI) Langmuir-Blodgett (LB) films. The obtained films... 
THIN-FILMS | PHYSICS, APPLIED | PRECURSOR | GROWTH | SILICON | GRAPHENE | SURFACE | STRUCTURAL-CHARACTERIZATION | 3C-SIC FILMS | PYROLYSIS | SUPRAMOLECULAR STRUCTURE FORMATION
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 03/2018, Volume 101, Issue 3, pp. 1048 - 1057
3C‐SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and... 
laser CVD | orientation | heteroepitaxial growth | 3C‐SiC | 3C-SiC | LOW-TEMPERATURE GROWTH | SI SUBSTRATE | DEFECTS | QUALITY | MECHANISM | EPITAXIAL-GROWTH | GRAPHENE | CRYSTAL | ROTATED EPITAXY | MATERIALS SCIENCE, CERAMICS | SILICON SUBSTRATE | Chemical vapor deposition | Epitaxy | Silicon carbide | Dilution | Lasers | Thick films | Silicon substrates | Epitaxial growth
Journal Article
Solar Energy Materials and Solar Cells, ISSN 0927-0248, 2009, Volume 93, Issue 6, pp. 1056 - 1061
Preparation of intrinsic hydrogenated amorphous silicon carbide (i-a-SiC:H) thin films for use as a top cell of triple junction solar cells is presented. These... 
Solar cell | Amorphous silicon carbide | Light stability | VHF-PECVD | Monomethyl silane | PHYSICS, APPLIED | MICROCRYSTALLINE SILICON | ALLOYS | ENERGY & FUELS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SIC-H | DILUTION | Thin films | Technology application | Usage | Silicon carbide | Solar energy industry | Silicon | Dielectric films | Silane
Journal Article
MRS Bulletin, ISSN 0883-7694, 06/2012, Volume 37, Issue 6, pp. 590 - 598
Complex prosthetic limbs, the bionic eye, or brain-computer interfaces implement microelectrode arrays to connect the nervous system to an electronic device.... 
WATER PERMEATION | PHYSICS, APPLIED | INTERFACE | VISUAL PROSTHESIS | MATERIALS SCIENCE, MULTIDISCIPLINARY | DROP-FOOT STIMULATOR | CUFF ELECTRODES | VAGAL NERVE-STIMULATION | INTRACORTICAL ELECTRODE ARRAY | POLYIMIDE | POLYMER-FILMS | NEURAL STIMULATION | Thin films | Arrays | Microelectrodes
Journal Article
Ceramics International, ISSN 0272-8842, 07/2018, Volume 44, Issue 10, pp. 11070 - 11076
In this study, pure Ni and Ni–TiN thin films were prefabricated from a reformative Watt nickel bath through ultrasonic electrodeposition (UE) under pulse... 
3D surface morphology | Ni-TiN thin film | Microstructure | Preparation | Wear assessment | SIC COMPOSITE COATINGS | PULSE ELECTRODEPOSITION | PREDICT | MATERIALS SCIENCE, CERAMICS | ARTIFICIAL NEURAL-NETWORKS | Thin films | Electrochemical reactions | Dielectric films | Hardness | Analysis
Journal Article
Applied Surface Science, ISSN 0169-4332, 03/2014, Volume 296, pp. 108 - 113
Ni–B/SiC composite films were electrodeposited using conventional Ni electrodeposition baths containing trimethylamine borane and SiC particles. In the present... 
Mechanical properties | Electrodeposition | Composites | Ni–B/SiC | Alloy | Ni-B/SiC | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PARTICLES | DEPOSITION | CHEMISTRY, PHYSICAL | MECHANICAL-PROPERTIES | NANOPARTICLES | B ALLOY-FILMS | NANOCRYSTALLINE NI | COATINGS | MATERIALS SCIENCE, COATINGS & FILMS | Hardness | Electrochemical reactions
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 01/2015, Volume 98, Issue 1, pp. 236 - 241
Two kinds of ‐oriented β‐SiC films with pyramidlike and needlelike morphologies were obtained by laser chemical vapor deposition. Their mean grain size ( ) as... 
Grain size | Crystal defects | Meetings | Lasers | Ceramics | Power law | Chemical vapor deposition | Deposition
Journal Article
Journal of the American Ceramic Society, ISSN 0002-7820, 09/2019, Volume 102, Issue 9, pp. 5668 - 5678
Journal Article