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IEEE Micro, ISSN 0272-1732, 03/2016, Volume 36, Issue 2, p. 64
  Broad social and economic trends are challenging the semiconductor industry to adapt to the next generation of systems and services. These trends were in... 
Economic trends | Semiconductors | Conferences | Silicon
Journal Article
IEEE Micro, ISSN 0272-1732, 03/2016, Volume 36, Issue 2, pp. 64 - 69
This column discusses some of the designs and presentations from the 2015 Hot Chips Symposium. 
Hot Chips | system on chip | SoC | datacenter | graphics | field-programmable gate array | Internet of Things | deep learning | multimedia | silicon | Sparc | Moore's law | global cache coherency | wireless | cloud computing | social media | high-performance computing | Chips
Journal Article
Solar Energy, ISSN 0038-092X, 02/2013, Volume 88, pp. 31 - 41
► Simulation study of silicon HJ and HIT solar cell by AFORS-HET software. ► Optimization of layers thickness and cell structure for producing high efficiency.... 
Simulation | HIT Structure | Silicon solar cells | Solar cells | Silicon | Solar energy industry | Solar batteries | Solar energy
Journal Article
Materials Science in Semiconductor Processing, ISSN 1369-8001, 08/2018, Volume 83, pp. 1 - 11
The production and thermal stability of the irradiation paramagnetic point defects (IPPDs) in the as-grown, standard float-zone silicon (STFZ) and oxygen doped... 
Multivacancies | Silicon | Irradiation defects | Electron spin resonance | POINT-DEFECTS | PHYSICS, CONDENSED MATTER | COMPLEX | PHYSICS, APPLIED | DIVACANCY | EPR | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | STATE | CENTERS | ENGINEERING, ELECTRICAL & ELECTRONIC | DETECTORS | SPIN-RESONANCE | RADIATION-DAMAGE | Annealing | Electrons
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 12/2017, Volume 122, Issue 21
Recently, 27 new half-Heusler compounds XYZ (X = Co, Rh, Fe, Ru, Ni; Y = Sc, Ti, V; Z = P, As, Sb, Si, Ge, Sn, Al, Ga, In) with 18 valence electrons are... 
Conduction bands | Semiconductors | Aluminum | Insulators | Antimony | Electronegativity | Lattice parameters | Tin | Germanium | Density functional theory | Silicon | Nickel | Yttrium
Journal Article
IEEE Sensors Journal, ISSN 1530-437X, 09/2016, Volume 16, Issue 17, pp. 6551 - 6558
We report the design, fabrication, and characterization of an ultrasensitive resonant (~300-400 Hz) magnetometer with 0.67-mV/nT sensitivity. The sensor was... 
Magnetic flux | Sensitivity | Magnetometers | Magnetomechanical effects | Magnetic sensors | Magnetic resonance | magnetometer | MEMS | parametric amplification | MAGNETIC-FIELD SENSOR | DESIGN | INSTRUMENTS & INSTRUMENTATION | PHYSICS, APPLIED | EEG | ENGINEERING, ELECTRICAL & ELECTRONIC | Amplification | Brain | Climate | Silicon nitride | Constants | Sensors | Magnetic fields | Chemical vapor deposition
Journal Article
SOLAR ENERGY, ISSN 0038-092X, 02/2013, Volume 88, pp. 31 - 41
Optimization of thicknesses of n-type a-Si:H emitter layer, front a-Si:H i-layer and p-type c-Si base wafer as well as optimum heterojunction (HJ) and HJ with... 
Silicon solar cells | Simulation | ENERGY & FUELS | HIT Structure
Journal Article
Applied Physics Letters, ISSN 0003-6951, 09/2018, Volume 113, Issue 12, p. 122104
The dielectric spectral response of Ge1-xSnx thin film alloys with relatively high Sn contents (0.15 ≤ x ≤ 0.27) and thickness from 42 to 132 nm was... 
TEMPERATURE | PHYSICS, APPLIED | SILICON
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 11/2019, Volume 40, Issue 11, pp. 1792 - 1795
The measured electrical characteristics of 600 V planar-gate inversion-channel 4H-SiC power MOSFETs fabricated in a 6 inch commercial foundry with 27 nm gate... 
MOSFET | Cgd | Voltage measurement | 600 V | planar-gate MOSFET | gate oxide | Qgd | Ron | Silicon carbide | inversion channel | Logic gates | Capacitance | Silicon | 4H-SiC | Electric fields | sp | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Small, ISSN 1613-6810, 07/2019, Volume 15, Issue 27, pp. 1970143 - n/a
Microscale energy storage for embedded electronics remains a major challenge at the dawn of the Internet of Things. In article number 1901224, David Pech,... 
pseudocapacitance | microfabrication | microsupercapacitors | interdigitated | Capacitance | Silicon wafers | Energy storage
Journal Article
RADIATION PROTECTION DOSIMETRY, ISSN 0144-8420, 08/2018, Volume 180, Issue 1-4, pp. 329 - 333
Journal Article
PHYSICAL REVIEW LETTERS, ISSN 0031-9007, 08/2017, Volume 119, Issue 7
The existence of Al-26 (t(1/2) = 7.17 x 10 (5) yr ) in the interstellar medium provides a direct confirmation of ongoing nucleosynthesis in the Galaxy. The... 
CHONDRITE | MASSIVE STARS | NUCLEI | PHYSICS, MULTIDISCIPLINARY | EARLY SOLAR-SYSTEM | RADIOACTIVE AL-26 | THERMONUCLEAR REACTION-RATES | PROTON | NUCLEOSYNTHESIS | SILICON-CARBIDE | EMISSION
Journal Article
Small, ISSN 1613-6810, 07/2015, Volume 11, Issue 27, pp. 3337 - 3337
Underwater smart surfaces that can switch between superoleophobicity and superoleophilicity are fabricated by L. Jiang and co‐workers with a combination of... 
underwater | wettability | adhesion | smart surfaces | Silanes | Underwater | Switches | Silicon | Nanostructure | Arrays | Adhesion | Switching
Journal Article
Materials Science Forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 847 - 850
In this work, we report our recently developed 27 kV, 20 A 4H-SiC n-IGBTs. Blocking voltages exceeding 24 kV were achieved by utilizing thick (210 mu m and 230... 
Electric potential | Silicon carbide | Data buses | Voltage | Materials science | Drift | Thermal analysis | Devices
Journal Article
Journal of Colloid And Interface Science, ISSN 0021-9797, 2006, Volume 293, Issue 1, pp. 151 - 157
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 16
Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics... 
Particle beams | Neutron flux | Point defects | Stability | Vacancies | Fluence | Neutrons | Electron spin | Divacancies | Silicon | Transformations | Electron paramagnetic resonance | Spin resonance | Radiation damage
Journal Article
Journal Article
Physical Review. C, Nuclear Physics, ISSN 0556-2813, 09/2011, Volume 84, Issue 3
Journal Article
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