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Journal of Crystal Growth, ISSN 0022-0248, 02/2019, Volume 507, pp. 154 - 156
Power devices with high-performance require long carrier lifetimes within their silicon crystals. This paper reports the in-situ measurement of carbon monoxide... 
A2. Czochralski method | A1. Mass transfer | A1. Impurities | PHYSICS, APPLIED | CARBON | Impurities | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | Czochralski method | CRYSTALLOGRAPHY | Mass transfer | Crystal growth | Single crystals | Electronic devices | Gas flow | Crystals | Flow velocity | Silicon | Carbon monoxide | Argon | Carbon | Contamination
Journal Article
International Journal of Heat and Mass Transfer, ISSN 0017-9310, 2005, Volume 48, Issue 21, pp. 4481 - 4491
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2010, Volume 312, Issue 20, pp. 2972 - 2976
For accurate prediction of carbon and oxygen impurities in a single crystal produced by the Czochralski method, global simulation of coupled oxygen and carbon... 
A1. Mass transfer | A1. Computer simulation | A1. Impurities | A2. Czochralski method | A1. Fluid flows | SYSTEM | Computer simulation | Impurities | SI MELT | Czochralski method | MAGNETIC-FIELD | CRYSTALLOGRAPHY | MODEL | Mass transfer | Fluid flows | FLOW | Crystal growth | Furnaces | Simulation | Transportation | Silicon | Transport | Carbon | Melts
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2002, Volume 234, Issue 1, pp. 32 - 46
To understand the characteristics of the Czochralski (Cz) furnace for the single-crystal growth of silicon, a set of global analyses of momentum, heat and mass... 
A1. Heat transfer | A1. Mass transfer | A1. Computer simulation | A2. Czochralski method | A1. Fluid flows | B2. Semiconducting silicon | SYSTEM | semiconducting silicon | MAGNETIC-FIELDS | HEAT-TRANSFER | MELT | Czochralski method | OXYGEN-TRANSPORT | CRYSTALLOGRAPHY | mass transfer | FLOW | SINGLE-CRYSTAL | CRYSTAL-GROWTH | fluid flows | computer simulation | heat transfer
Journal Article
International Journal of Heat and Mass Transfer, ISSN 0017-9310, 2005, Volume 48, Issue 21, pp. 4492 - 4497
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2004, Volume 267, Issue 3, pp. 466 - 474
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2003, Volume 255, Issue 1, pp. 81 - 92
Journal Article
International Journal of Heat and Mass Transfer, ISSN 0017-9310, 2003, Volume 46, Issue 15, pp. 2887 - 2898
Control of melt flow in crystal growth process by application of the magnetic field is a practical technique for silicon single crystals. In order to... 
OXYGEN-TRANSPORT | MECHANICS | THERMODYNAMICS | MELT FLOW | CRYSTAL-GROWTH | ENGINEERING, MECHANICAL
Journal Article
Crystal Research and Technology, ISSN 0232-1300, 07/2006, Volume 41, Issue 7, pp. 636 - 644
Journal Article
Journal of the Electrochemical Society, ISSN 0013-4651, 2010, Volume 157, Issue 2, pp. H153 - H159
For an accurate prediction of carbon and oxygen impurities in multicrystalline silicon material for solar cells, global simulation of coupled oxygen and carbon... 
SYSTEM | ELECTROCHEMISTRY | MELT | GAS-FLOW RATE | impurities | MODEL | TRANSVERSE MAGNETIC-FIELD | crystal growth from melt | furnaces | SILICON CZOCHRALSKI FURNACE | MULTICRYSTALLINE SILICON | heat radiation | convection | elemental semiconductors | PRESSURE | semiconductor growth | silicon | CRYSTAL-GROWTH | directional solidification | MATERIALS SCIENCE, COATINGS & FILMS
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 03/2011, Volume 318, Issue 1, pp. 224 - 229
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 2, pp. 306 - 312
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2007, Volume 303, Issue 1, pp. 165 - 169
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 07/2012, Volume 351, Issue 1, pp. 141 - 148
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 09/2012, Volume 355, Issue 1, pp. 122 - 128
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2006, Volume 292, Issue 2, pp. 515 - 518
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 2000, Volume 73, Issue 1, pp. 30 - 35
In the SSi project, the growth technologies for 400 mm silicon single crystals have been investigated by several numerical simulation techniques, global heat... 
STREAM | Numerical simulation | Czochralski silicon | FEMAG | Large diameter | PHYSICS, CONDENSED MATTER | large diameter | MATERIALS SCIENCE, MULTIDISCIPLINARY | numerical simulation
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2008, Volume 310, Issue 7, pp. 1790 - 1793
The solution growth technique is one of the key methods for fabricating gallium nitride (GaN) wafers with small dislocation density. Since the growth rate of... 
B2. Semiconductor gallium compounds | A2. Growth from solution | semiconductor gallium compounds | SINGLE-CRYSTALS | N-2 | MELT | growth from solution | NA FLUX METHOD | 750-DEGREES-C | CRYSTALLOGRAPHY | MODEL | SIMULATION | SILICON CZOCHRALSKI FURNACE | FLOW | Growth | Liquors | Methods
Journal Article
Journal of Crystal Growth, ISSN 0022-0248, 2005, Volume 283, Issue 3, pp. 563 - 575
Temperature field in an inductively heated graphite crucible in a Czochralski crystal growth furnace is investigated experimentally and numerically at three... 
A2. Czochralski method | A1. Heat transfer | A1. Computer simulation | GLOBAL SIMULATION | CRYSTAL-GROWTH PROCESS | computer simulation | Czochralski method | CRYSTALLOGRAPHY | MODEL | heat transfer | SILICON CZOCHRALSKI FURNACE | Computer-generated environments | Furnaces | Computer simulation | Graphite
Journal Article
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