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Angewandte Chemie (International ed.), ISSN 1433-7851, 2010, Volume 49, Issue 25, pp. 4273 - 4277
Journal Article
Angewandte Chemie International Edition, ISSN 1433-7851, 12/2013, Volume 52, Issue 51, pp. 13769 - 13773
Journal Article
Applied Physics Letters, ISSN 0003-6951, 04/2017, Volume 110, Issue 14
We report on Sn-doped β -Ga2O3 MOSFETs grown by molecular beam epitaxy with as-grown carrier concentrations from 0.7 × 1018 to 1.6 × 1018 cm−3 and a fixed... 
SINGLE-CRYSTALS | PHYSICS, APPLIED
Journal Article
Journal of crystal growth, ISSN 0022-0248, 2014, Volume 405, pp. 6 - 10
Journal Article
Applied Physics Letters, ISSN 0003-6951, 08/2017, Volume 111, Issue 9, p. 92102
We have demonstrated that depletion/enhancement-mode β-Ga2O3 on insulator field-effect transistors can achieve a record high drain current density of 1.5/1.0... 
SINGLE-CRYSTALS | PHYSICS, APPLIED | MOSFETS
Journal Article
Journal of applied crystallography, ISSN 1600-5767, 2015, Volume 48, Issue 1, pp. 3 - 10
Journal Article
Advanced Materials, ISSN 0935-9648, 07/2018, Volume 30, Issue 29, p. n/a
By fine‐tuning the crystal nucleation and growth process, a low‐temperature‐gradient crystallization method is developed to fabricate high‐quality perovskite... 
digital imaging assembly | perovskite | low‐temperature‐gradient crystallization | single‐crystals | single-crystals | low-temperature-gradient crystallization | Crystal growth | Silicon wafers | Crystallization | Perovskites | Sensor arrays | Thin films | Single crystals | Digital imaging | Carrier lifetime | Silicon | Sensors | Carrier mobility | Assembly
Journal Article
Angewandte Chemie (International ed.), ISSN 1433-7851, 2015, Volume 54, Issue 17, pp. 5179 - 5182
Journal Article
13.