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Proceedings of the IEEE, ISSN 0018-9219, 11/2003, Volume 91, Issue 11, pp. 1860 - 1873
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2016, Volume 63, Issue 8, pp. 3028 - 3035
Journal Article
2001, 1st ed., ISBN 9786610264780, 424
A practical, comprehensive survey of SOI CMOS devices and circuits for microelectronics engineers The microelectronics industry is becoming increasingly... 
Integrated circuits | Very large scale integration | Metal oxide semiconductors, Complementary | Low voltage integrated circuits | TECHNOLOGY & ENGINEERING | Electronics | VLSI & ULSI | Circuits
eBook
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, ISSN 0894-3370, 01/2019, Volume 32, Issue 1, pp. e2460 - n/a
Journal Article
Journal of Micromechanics and Microengineering, ISSN 0960-1317, 05/2018, Volume 28, Issue 8, p. 85013
A maskless etching technique for fabrication of 3D MEMS structures has been presented. The technique has been applied to micro structures embedded during a... 
post CMOS processing | wall shear stress sensor | 3D MEMS | SOI CMOS MEMS | micro hot-wire/film | maskless etching | RIE | WALL SHEAR-STRESS | PHYSICS, APPLIED | OXIDE | CONTAMINATION | NANOSCIENCE & NANOTECHNOLOGY | DAMAGE | ENGINEERING, ELECTRICAL & ELECTRONIC | INSTRUMENTS & INSTRUMENTATION | SIO2
Journal Article
Solid-State Electronics, ISSN 0038-1101, 2015, Volume 108, pp. 30 - 35
In this work, we demonstrate the powerful methodology of electronic transport characterization in highly scaled (down to 14 nm-node) FDSOI CMOS devices using... 
Interface coupling measurement | Low temperature characterization | UTBB FD-SOI | Electronics transport | Interface-coupling measurement | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ULTRATHIN | CARRIER TRANSPORT | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
physica status solidi (c), ISSN 1862-6351, 12/2016, Volume 13, Issue 10‐12, pp. 740 - 745
Strain boosters are an effective way to improve performances in advanced CMOS FDSOI devices. Hole mobility is higher in pFETs with compressive channels.... 
FDSOI‐strain‐tensile stress‐STRASS | FDSOI-strain-tensile stress-STRASS | CMOS | Modules | Recrystallization | Silicon | Devices | Channels | Silicon germanides | Strain | Physics
Journal Article
Solid-State Electronics, ISSN 0038-1101, 2015, Volume 112, pp. 13 - 18
In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI CMOS devices are presented from 77 K to 300 K. At first, we analyzed... 
Neutral defects | UTBB | High-k/metal gate stack | FD-SOI
Journal Article
Solid State Electronics, ISSN 0038-1101, 10/2015, Volume 112, pp. 13 - 18
In this paper, carrier transport properties in highly scaled (down to 14 nm-node) FDSOI CMOS devices are presented from 77 K to 300 K. At first, we analyzed... 
UTBB | Neutral defects | High-k/metal gate stack | FD-SOI | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
Solid State Electronics, ISSN 0038-1101, 06/2015, Volume 108, pp. 30 - 35
In this work, we demonstrate the powerful methodology of electronic transport characterization in highly scaled (down to 14 nm-node) FDSOI CMOS devices using... 
Interface coupling measurement | UTBB FD-SOI | Low temperature characterization | Electronics transport | Complementary metal oxide semiconductors | Engineering Sciences | Micro and nanotechnologies | Microelectronics
Journal Article
International Journal of Numerical Modelling: Electronic Networks, Devices and Fields, ISSN 0894-3370, 11/2015, Volume 28, Issue 6, pp. 613 - 627
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 04/2003, Volume 50, Issue 4, pp. 988 - 994
We have developed high-performance strained-SOI CMOS devices on thin film relaxed SiGe-on-insulator (SGOI) substrates with high Ge content (25%) fabricated by... 
Ion implantation | Germanium alloys | Silicon alloys | SIMOX | Semiconductor materials | Charge carrier mobility | CMOS digital integrated circuits | Mobility | CMOS | Strained-SOI | SiGe | ITOX | mobility | PHYSICS, APPLIED | CHANNEL | SIMOX TECHNOLOGY | BUFFER LAYERS | strained-SOI | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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