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Surface Science, ISSN 0039-6028, 10/2013, Volume 616, pp. 120 - 124
We examine the shape instability of dislocation-free strained islands in heteroepitaxial growth, using continuum elasticity theory. Using the dipole... 
Critical island size | Strained islands | Continuum elasticity theory | Shape instability | PSEUDOPOTENTIALS | PHYSICS, CONDENSED MATTER | ELECTRON-GAS | CHEMISTRY, PHYSICAL | HETEROEPITAXIAL METAL GROWTH | RELIEF | STRESS | Mathematical analysis | Continuums | Elasticity | Instability | Copper | Islands | Density | Dipole interactions
Journal Article
Nano Letters, ISSN 1530-6984, 06/2016, Volume 16, Issue 6, pp. 3919 - 3924
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 07/2015, Volume 83, pp. 834 - 840
In this paper, the growth mechanism and the morphologies of GaSb islands grown on Si (1 0 0) by low-pressure metal-organic chemical vapor deposition have been... 
MOCVD | GaSb island | Si | TRANSMISSION ELECTRON-MICROSCOPY | PHYSICS, CONDENSED MATTER | STRAINED ISLANDS | QUANTUM DOTS | Chemical vapor deposition | Chemical properties
Journal Article
Physical Review Letters, ISSN 0031-9007, 2002, Volume 89, Issue 19, pp. 196104/4 - 196104
The initial stages of the formation of SiGe islands on Si(001) pose a long-standing puzzle. We show that the behavior can be consistently explained by one... 
SHAPE TRANSITION | PHYSICS, MULTIDISCIPLINARY | PATHWAY | SURFACTANTS | STRAINED ISLANDS | GROWTH | STRESS | LAYERS
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 2006, Volume 73, Issue 19
We report on the energy band gap and band lineup of SiGe/Si heterostructures either in the case of coherently strained quantum wells or in the case of SiGe/Si... 
PHYSICS, CONDENSED MATTER | ENERGY | GERMANIUM-SILICON ALLOYS | PHOTOLUMINESCENCE | SINGLE | MOBILITY | STRAINED-LAYER HETEROSTRUCTURES | GAP | GE/SI
Journal Article
Physical Review Letters, ISSN 0031-9007, 10/2012, Volume 109, Issue 15, pp. 156101 - 156101
We show that on suitably pit-patterned Si(001), deposition of just a few atomic layers of Ge can trigger a far larger flow of Si into the pits. This surprising... 
NANOSTRUCTURES | EVOLUTION | PHYSICS, MULTIDISCIPLINARY | SURFACE SEGREGATION | STRAINED ISLANDS
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2004, Volume 84, Issue 11, pp. 1922 - 1924
We report on a combination of lithography and self-assembly techniques which results in long-range two-dimensionally ordered Ge islands. Island lattices with... 
PHYSICS, APPLIED | DOTS | EPITAXIAL-GROWTH | HETEROEPITAXY | STRAINED ISLANDS
Journal Article
APPLIED PHYSICS LETTERS, ISSN 0003-6951, 03/2004, Volume 84, Issue 13, pp. 2262 - 2264
The sequence of shape transitions in low mismatch, dilute coherent Si1-xGex (x<0.2) alloy islands was documented by scanning tunneling microscopy and... 
TRANSITION | PHYSICS, APPLIED | DOMES | STRAINED ISLANDS | GROWTH | ENERGETICS | COHERENT | PYRAMIDS | SURFACES
Journal Article
Physical Review Letters, ISSN 0031-9007, 03/1999, Volume 82, Issue 13, pp. 2745 - 2748
The evolution of the size and shape of individual {105} faceted Ge islands on Si(001)is measured with a high temperature scanning tunneling microscope during... 
MECHANISMS | PHYSICS, MULTIDISCIPLINARY | STRAINED ISLANDS | LAYERS
Journal Article
JOURNAL OF APPLIED PHYSICS, ISSN 0021-8979, 01/2014, Volume 115, Issue 1, p. 13502
Strained Ge islands have been grown on fully relaxed Si0.5Ge0.5 substrate by pulsed laser ablation technique. The formation of strained Ge islands has been... 
BUFFERS | PHYSICS, APPLIED | PHOTOLUMINESCENCE | STRAINED-GE | TEMPERATURE | HETEROSTRUCTURES | STABILITY | LAYER | THICKNESS | MOSFETS | Photoluminescence | Silicon substrates | X-ray diffraction | Laser ablation | Raman spectroscopy | Pulsed lasers | Thickness | Spectrum analysis | Optical properties | Germanium | Oxidation | X ray spectra | Islands
Journal Article
CRYSTAL GROWTH & DESIGN, ISSN 1528-7483, 09/2010, Volume 10, Issue 9, pp. 3949 - 3955
We study theoretically new effects during the stress-driven nucleation of three-dimensional (3D) crystal islands in lattice mismatched material systems. It is... 
TRANSITION | EPITAXY | MECHANISM | SEMICONDUCTORS | MATERIALS SCIENCE, MULTIDISCIPLINARY | STRAINED ISLANDS | GROWTH | SILICON | SURFACE | CRYSTALLOGRAPHY | GAAS | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
Applied Physics Letters, ISSN 0003-6951, 1995, Volume 67, Issue 13, pp. 1850 - 1852
Using the strained-induced 2D-3D transition, InAs dots have been grown on InP(001) and examined by transmission electron microscopy, Two different modes of... 
HIGHLY STRAINED INXGA1-XAS | PHYSICS, APPLIED | GAAS | INGAAS
Journal Article
Physical Review Letters, ISSN 0031-9007, 1998, Volume 80, Issue 5, pp. 984 - 987
The size distribution of self-assembled heteroepitaxial islands is critical to their application as quantum dots in novel devices, In situ, real time UHV... 
COHERENT ISLANDS | TRANSITION | MICROSTRUCTURAL EVOLUTION | PHYSICS, MULTIDISCIPLINARY | HETEROEPITAXY | MOLECULAR-BEAM EPITAXY | STRAINED ISLANDS | INAS ISLANDS | ISLAND FORMATION | STRANSKI-KRASTANOV GROWTH
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 0163-1829, 04/2004, Volume 69, Issue 16, pp. 1 - 165413
The stability of islands against coarsening during the self-assembly process of the Stranski-Krastanow systems was explored by an energy analysis and by... 
TRANSITION | PHYSICS, CONDENSED MATTER | FILMS | INSTABILITY | STRAINED ISLANDS | EQUILIBRIUM | SURFACE | PYRAMIDS | STRANSKI-KRASTANOV GROWTH
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 02/2004, Volume 95, Issue 3, pp. 1572 - 1576
The evolution of the shape and size of TiSi2 islands on Si (111) surfaces is explored with real time ultraviolet photoelectron emission microscopy. During... 
SELF-LIMITING GROWTH | TRANSITION | PHYSICS, APPLIED | EPITAXIAL-GROWTH | STRAINED ISLANDS | SILICIDE | ELECTRON-MICROSCOPE | NANOWIRES | ERBIUM | Titanium | Silicon | Research | Epitaxy | Electric properties
Journal Article
Surface Science, ISSN 0039-6028, 2007, Volume 601, Issue 3, pp. 757 - 762
Journal Article
Applied Physics Letters, ISSN 0003-6951, 03/2005, Volume 86, Issue 11, pp. 113106 - 113106-3
Nucleation and growth of (In,Ga)As-GaAs(100) islands with low In content by molecular-beam epitaxy is investigated by scanning tunneling microscopy. The... 
EPITAXY | ATOMIC-STRUCTURE | PHYSICS, APPLIED | ASSEMBLED QUANTUM DOTS | SHAPE TRANSITION | STRAINED ISLANDS | GROWTH | EQUILIBRIUM | INAS ISLANDS | GAAS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 01/2003, Volume 93, Issue 1, pp. 291 - 295
The effect of the deposition rate on the size, density, and uniformity of Ge islands grown on Si(100) is investigated. Upon changing the growth rate from 4 to... 
GE ISLANDS | PHYSICS, APPLIED | ATOMIC-FORCE MICROSCOPY | EVOLUTION | CHEMICAL-VAPOR-DEPOSITION | SHAPE TRANSITIONS | STRAINED ISLANDS | COHERENT | SURFACE | Thermal properties | Germanium | Silicon | Research
Journal Article
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