X
Search Filters
Format Format
Format Format
X
Sort by Item Count (A-Z)
Filter by Count
Journal Article (1596) 1596
Conference Proceeding (214) 214
Publication (78) 78
Dissertation (65) 65
Book Chapter (41) 41
Book Review (7) 7
Magazine Article (6) 6
Government Document (4) 4
Book / eBook (2) 2
more...
Subjects Subjects
Subjects Subjects
X
Sort by Item Count (A-Z)
Filter by Count
silicon (784) 784
physics, applied (733) 733
engineering, electrical & electronic (535) 535
physics, condensed matter (407) 407
strained silicon (379) 379
materials science, multidisciplinary (330) 330
mosfets (269) 269
germanium (261) 261
mobility (257) 257
strained-si (252) 252
devices (230) 230
strain (228) 228
strained si (226) 226
analysis (183) 183
sige (180) 180
mosfet (167) 167
transistors (142) 142
silicium (131) 131
silicon germanium (131) 131
stress (131) 131
logic gates (119) 119
nanoscience & nanotechnology (115) 115
silicon germanides (113) 113
metal oxide semiconductor field effect transistors (110) 110
channels (109) 109
strained-silicon (109) 109
optics (108) 108
mos-fet (107) 107
semiconductors (107) 107
layers (105) 105
silicon compounds (105) 105
siliciumgermanid (99) 99
threshold voltage (99) 99
physics (98) 98
electric properties (96) 96
epitaxy (96) 96
cmos (93) 93
strained-layer superlattices (93) 93
growth (91) 91
heterostructures (91) 91
molecular-beam epitaxy (89) 89
materials science, coatings & films (87) 87
field-effect transistors (85) 85
electron mobility (77) 77
alloys (76) 76
physics, multidisciplinary (76) 76
relaxation (76) 76
performance (75) 75
substrates (75) 75
mosfet circuits (74) 74
scattering (70) 70
chemistry, multidisciplinary (69) 69
chemistry, physical (67) 67
materials science (67) 67
oxidation (67) 67
germaniumsiliciumlegierung (66) 66
nanostructure (65) 65
germanium silicon alloys (64) 64
elementhalbleiter (63) 63
gates (63) 63
integrated circuit fabrication (63) 63
usage (63) 63
soi (62) 62
stresses (62) 62
transport (61) 61
computer simulation (60) 60
mobility enhancement (60) 60
hole mobility (59) 59
semiconductor devices (59) 59
technology (59) 59
photoluminescence (58) 58
fabrication (57) 57
research (57) 57
simulation (57) 57
diffusion (56) 56
capacitive sensors (54) 54
temperature (54) 54
chemical-vapor-deposition (53) 53
model (53) 53
films (52) 52
mathematical models (52) 52
superlattices (52) 52
substrate (51) 51
optical and electronic materials (50) 50
silicon-on-insulator (49) 49
strained molecules (48) 48
drains (46) 46
nanowires (46) 46
si (46) 46
thin films (46) 46
layer (45) 45
raman spectroscopy (45) 45
soi-technik (45) 45
strained sige (45) 45
degradation (43) 43
performance evaluation (43) 43
strained-si-transistor (43) 43
electron-mobility (42) 42
heterostruktur (42) 42
mathematical analysis (42) 42
more...
Library Location Library Location
Language Language
Language Language
X
Sort by Item Count (A-Z)
Filter by Count
English (1843) 1843
Japanese (42) 42
Chinese (36) 36
Korean (2) 2
Dutch (1) 1
French (1) 1
German (1) 1
Portuguese (1) 1
more...
Publication Date Publication Date
Click on a bar to filter by decade
Slide to change publication date range


Journal of Optics (United Kingdom), ISSN 2040-8978, 08/2017, Volume 19, Issue 9, p. 93002
Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After... 
nonlinear optics | integrated optics | silicon photonics | integrated quantum optics | WIRE WAVE-GUIDE | 2-PHOTON ABSORPTION | SUPERCONTINUUM GENERATION | FREQUENCY COMB GENERATION | WAVELENGTH CONVERSION | STRAINED SILICON | STIMULATED BRILLOUIN-SCATTERING | 2ND-HARMONIC GENERATION | RAMAN AMPLIFICATION | ALL-OPTICAL MODULATION | OPTICS
Journal Article
Scientific Reports, ISSN 2045-2322, 12/2019, Volume 9, Issue 1, pp. 1088 - 12
Strained silicon waveguides have been proposed to break the silicon centrosymmetry, which inhibits second-order nonlinearities. Even if electro-optic effect... 
STRAINED SILICON | NONLINEARITY | RESONATORS | MULTIDISCIPLINARY SCIENCES | GAP | STRESS | MODULATION | Mechanical properties | Ultraviolet radiation | Silicon | U.V. radiation | Nonlinear systems | Silicon nitride
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2004, Volume 25, Issue 4, pp. 191 - 193
Journal Article
Nano Letters, ISSN 1530-6984, 08/2010, Volume 10, Issue 8, pp. 3204 - 3208
In this paper we demonstrate that under ultrahigh strain conditions p-type single crystal silicon nanowires possess an anomalous piezoresistance effect. The... 
Nanowire | mobility | piezoresitivity | strained silicon | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | CARRIER MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | BAND-STRUCTURE | STRAINED-SI | DEFORMATION | CHEMISTRY, MULTIDISCIPLINARY | FRACTURE | GROWTH
Journal Article
Nature Materials, ISSN 1476-1122, 12/2014, Volume 13, Issue 12, pp. 1122 - 1127
For decades now, silicon has been the workhorse of the microelectronics revolution and a key enabler of the information age. Owing to its excellent optical... 
PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | STRAINED SILICON | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | GENERATION | PHYSICS | MODULATION | Materials science | Silicon | Microelectronics | Crystallization | Reduction | Semiconductor materials | Fiber technology | Anisotropy | Laser processing | Electronics | Cladding | Photonics
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 01/2007, Volume 28, Issue 1, pp. 58 - 61
A flexure-based four-point mechanical wafer bending setup is used to apply large uniaxial tensile stress (up to 1.2 GPa) on industrial nMOSFETs with 0 to ~700... 
Piezoresistive devices | Predictive models | Calibration | MOSFETs | Degradation | Tensile stress | strained-silicon | Mechanical variables measurement | Silicon | wafer bending | Piezoresistance | Stress measurement | uniaxial | Uniaxial | Wafer bending | Strained-silicon | ELECTRON-MOBILITY | MECHANICAL-STRESS | piezoresistance | STRAIN | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Stresses | Drains | Bending | Devices | Channels
Journal Article
Nature Communications, ISSN 2041-1723, 2013, Volume 4, Issue 1, p. 1671
The development of silicon photonics could greatly benefit from the linear electro-optical properties, absent in bulk silicon, of ferroelectric oxides, as a... 
EPITAXY | OXIDE | TEMPERATURE | STRAINED SILICON | RESONATORS | MODULATORS | MULTIDISCIPLINARY SCIENCES | BATIO3 THIN-FILM | LITHIUM-NIOBATE | DEPENDENCE
Journal Article
Optics Express, ISSN 1094-4087, 08/2012, Volume 20, Issue 18, pp. 20506 - 20515
We describe a concept for second-order nonlinear optical processes in silicon photonics. A silicon-organic hybrid (SOH) double slot waveguide is... 
PLATFORM | MODES | OPTICAL-CONSTANTS | STRAINED SILICON | CONVERSION | PHOTONICS | ON-INSULATOR | GENERATION | OPTICS | ELECTROOPTIC MODULATOR | TECHNOLOGY | Surface Plasmon Resonance - instrumentation | Organic Chemicals - chemistry | Computer-Aided Design | Nonlinear Dynamics | Equipment Design | Silicon - chemistry | Equipment Failure Analysis
Journal Article
Optics Communications, ISSN 0030-4018, 11/2014, Volume 330, pp. 40 - 44
Here we report the demonstration of a GHz-speed Lithium Niobate (LiNbO3) modulator that uses an amorphous Silicon waveguide to strongly confine light. The... 
Hybrid | LiNbO3 | Silicon photonics | Modulator | STRAINED SILICON | GBIT/S | OPTICS | PHOTONIC DEVICES | LITHIUM-NIOBATE | RESONATOR
Journal Article
Applied Physics Letters, ISSN 0003-6951, 06/2015, Volume 106, Issue 24, p. 241104
We theoretically characterize the free-carrier plasma dispersion effect in fully etched silicon waveguides, with various dielectric material claddings, due to... 
STRAINED SILICON | PHYSICS, APPLIED | Physics - Optics
Journal Article
半导体学报:英文版, ISSN 1674-4926, 2014, Volume 35, Issue 10, pp. 30 - 36
The present work gives some insight into the subthreshold behaviour of short-channel double-material- gate strained-silicon on silicon-germanium MOSFETs in... 
MOSFET | 摆幅 | 模型 | 亚阈值电流 | 衬底 | 应变硅 | 硅锗 | 短沟道 | dual-metal gate | subthreshold current | strained-Si channel-Si | subthreshold swing | Gex substrate | Semiconductors | Mathematical analysis | Swing | Mathematical models | Devices | Channels | MOSFETs | Gates
Journal Article
Solid State Electronics, ISSN 0038-1101, 05/2018, Volume 143, pp. 62 - 68
•Silicon pTFET with average SS of 55 mV/dec over two decades of drain current.•The device relies on line-tunneling and possible reduction of TAT to achieve... 
Tunnel FET | Trap Assisted Tunneling (TAT) | Line-tunneling | STRAINED SI | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | ENGINEERING, ELECTRICAL & ELECTRONIC | Silicon | Taxation | Tunnels
Journal Article
Optics Express, ISSN 1094-4087, 12/2014, Volume 22, Issue 24, pp. 29927 - 29936
We demonstrate silicon-organic hybrid (SOH) electro-optic modulators that enable quadrature phase-shift keying (QPSK) and 16-state quadrature amplitude... 
IQ MODULATOR | OPTICS | HIGH-SPEED | STRAINED SILICON | ELECTROOPTIC MODULATOR | Electronics | Signal Processing, Computer-Assisted | Optics and Photonics - instrumentation | Electricity | Silicon - chemistry | Organic Chemicals - chemistry
Journal Article
Chemical Vapor Deposition, ISSN 0948-1907, 12/2013, Volume 19, Issue 10-11-12, pp. 363 - 366
The nucleation rate of hydrogenated microcrystalline silicon (µc‐Si:H) films deposited by plasma‐enhanced (PE)CVD on hydrogenated amorphous silicon (a‐Si:H)... 
Nucleation rate | Compressive stress | Microcrystalline silicon | Strained Si‐Si bonds | Thickness dependence | Strained Si-Si bonds | SOLAR-CELLS | CRYSTALLIZATION CONTROL | WINDOW | FILMS | NANOCRYSTALLINE SILICON | A-SI-H | GROWTH | STRESS | MATERIALS SCIENCE, COATINGS & FILMS | Chemical vapor deposition | Silicon | Correlation
Journal Article
Applied Physics A, ISSN 0947-8396, 1/2017, Volume 123, Issue 1, pp. 1 - 6
Journal Article