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Journal of Applied Physics, ISSN 0021-8979, 09/2019, Volume 126, Issue 11, p. 113902
We improve thermal tolerance of a Co/Pt based synthetic ferrimagnetic (SyF) reference layer in a CoFeB/MgO-based perpendicular anisotropy magnetic tunnel... 
STT-MRAM | PHYSICS, APPLIED
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2013, Volume 34, Issue 2, pp. 232 - 234
Spin-transfer torque magnetic random access memory devices (STT-MRAMs) show great promise as a candidate technology for on-chip caches. In this letter, we... 
Torque | true self-reference differential STT-MRAM | Writing | spin-transfer torque MRAM (STT-MRAM) | Sensors | Improved dual pillar STT-MRAM | System-on-a-chip | Transistors | Delay | symmetric STT-MRAM write current | Magnetic tunneling | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Proceedings of the 40th Annual International Symposium on computer architecture, ISSN 1063-6897, 06/2013, pp. 189 - 200
With technology scaling, on-chip power dissipation and off-chip memory bandwidth have become significant performance bottlenecks in virtually all computer... 
TCAM | associative computing | STT-MRAM | Associative computing
Conference Proceeding
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 03/2018, Volume 26, Issue 3, pp. 470 - 483
In-memory computing is a promising approach to addressing the processor-memory data transfer bottleneck in computing systems. We propose spin-transfer torque... 
Torque | spintronic memories | processing-in-memory | Random access memory | spin-transfer torque magnetic RAM (STT-MRAM) | In-memory computing | Sensors | System-on-chip | Standards | Magnetic tunneling | Spintronics | CIRCUITS | DESIGN | COMPUTER SCIENCE, HARDWARE & ARCHITECTURE | EMBEDDED STT-MRAM | ARCHITECTURE | POWER | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, ISSN 0278-0070, 12/2019, Volume 38, Issue 12, pp. 2229 - 2242
As an important nonvolatile memory technology, spin transfer torque magnetoresistive RAM (STT-MRAM) is widely considered as a universal memory solution for... 
Program processors | Main memory | row buffer management | Nonvolatile memory | Microprocessors | Memory management | Random access memory | read disturbance | spin transfer torque magnetoresistive RAM (STT-MRAM) | Magnetic tunneling | main memory | STT-MRAM
Journal Article
Proceedings of the 37th annual international symposium on computer architecture, ISSN 1063-6897, 06/2010, pp. 371 - 382
As CMOS scales beyond the 45nm technology node, leakage concerns are starting to limit microprocessor performance growth. To keep dynamic power constant across... 
STT-MRAM | power-efficiency | Power-effciency
Conference Proceeding
JOURNAL OF PHYSICS D-APPLIED PHYSICS, ISSN 0022-3727, 01/2020, Volume 53, Issue 4, p. 44001
The magnetic stray field is an unavoidable consequence of ferromagnetic devices and sensors leading to a natural asymmetry in magnetic properties. Such... 
spintronics | PHYSICS, APPLIED | antiferromagnets | atomistic | MRAM | magnetism | STT-MRAM | magnetostatics | Physics - Materials Science
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 02/2014, Volume 22, Issue 2, pp. 384 - 395
Journal Article
IEEE Journal of Solid-State Circuits, ISSN 0018-9200, 02/2013, Volume 48, Issue 2, pp. 598 - 610
This paper explores the scalability of in-plane and perpendicular MTJ based STT-MRAMs from 65 nm to 8 nm while taking into consideration realistic variability... 
Random access memory | STT-MRAM | Stability analysis | roadmap | spin torque transfer (STT) | variability | Thermal stability | scalability | Resistance | Anisotropic magnetoresistance | Thermal factors | macromodel | magnetic tunnel junction (MTJ) | Magnetic tunneling | Cache | DESIGN | SRAM | WRITE | ENGINEERING, ELECTRICAL & ELECTRONIC | SPRAM | 65-NM CMOS TECHNOLOGY | CELL
Journal Article
Journal Article
Proceedings - Design Automation Conference, ISSN 0738-100X, 2008, pp. 278 - 283
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 07/2018, Volume 39, Issue 7, pp. 951 - 954
Journal Article
IEEE Transactions on Very Large Scale Integration (VLSI) Systems, ISSN 1063-8210, 01/2018, Volume 26, Issue 1, pp. 50 - 62
Journal Article
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