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Physica B: Physics of Condensed Matter, ISSN 0921-4526, 08/2012, Volume 407, Issue 15, pp. 2981 - 2984
Carbon impurities in Si are common in floating-zone and cast-Si materials. The simplest and most discussed carbon complex is the interstitial–substitutional... 
Theory | Carbon pairs | Silicon | PHYSICS, CONDENSED MATTER | DEFECTS | LOCAL VIBRATIONAL-MODES | INTERSTITIAL-CARBON | ELASTIC BAND METHOD | SUBSTITUTIONAL-CARBON | PSEUDOPOTENTIALS | MINIMUM ENERGY PATHS | SADDLE-POINTS | SYSTEMS | Solar cells | Self-interstitials | Condensed matter | Mathematical analysis | Binding energy | Carbon | Vibrational spectra
Journal Article
Physica B: Physics of Condensed Matter, ISSN 0921-4526, 2001, Volume 308, pp. 513 - 516
The generation and annihilation of defects upon electron irradiation and subsequent annealing has been studied by high-resolution deep level transient... 
Laplace DLTS | Silicon | Vacancy–phosphorus pair | Carbon–carbon pair | Carbon-carbon pair | Vacancy-phosphorus pair | PHYSICS, CONDENSED MATTER | ELECTRON | silicon | carbon-carbon pair | laplace DLTS | vacancy-phosphorus pair | IRRADIATED SILICON | LEVEL | SUBSTITUTIONAL-CARBON
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 05/2008, Volume 77, Issue 20
The irradiation of c-Si produces self-interstitials (Si-i), which interact with substitutional carbon to produce interstitial carbon (O-i). The latter is... 
RADIATION-DAMAGE CENTERS | PHYSICS, CONDENSED MATTER | SUBSTITUTIONAL-CARBON PAIR | INTERSTITIAL-CARBON | CZOCHRALSKI SILICON | OXYGEN COMPLEX | SYSTEMS | FUNCTIONAL PERTURBATION-THEORY | ELECTRON-IRRADIATED SILICON | ABSORPTION | IDENTIFICATION
Journal Article
Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2008, Volume 78, Issue 8
Journal Article
PHYSICAL REVIEW B, ISSN 1098-0121, 04/2012, Volume 85, Issue 16
A first-principles method is applied to find the intra and intervalley n-type carrier scattering rates for substitutional carbon in silicon. The method builds... 
PHYSICS, CONDENSED MATTER | TRANSPORT | SI1-YCY | DEFECTS | SUBSTITUTIONAL-CARBON PAIR | INTERSTITIAL-CARBON | SILICON | BAND-GAPS | QUASI-NEWTON METHODS | RESISTIVITY | PRESSURE COEFFICIENTS
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 03/1997, Volume 12, Issue 3, pp. 284 - 290
A new metastable peak due to hole traps has been observed in DLTS measurements on as-processed diodes of high-resistivity floatzone silicon. The peak consists... 
PHYSICS, CONDENSED MATTER | SUBSTITUTIONAL-CARBON PAIR | K PM MATERIALS SCIENCE | SEMICONDUCTORS | ELECTRON-PARAMAGNETIC RESONANCE | DEFECT | K UK PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE | K IQ ENGINEERING, ELECTRICAL & ELECTRONIC | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 09/2001, Volume 64, Issue 12
Infrared absorption experiments and ab initio computer simulations are used to study tin-carbon centers in silicon. Electron irradiation of C and Sn doped Si... 
GOLD | PHYSICS, CONDENSED MATTER | N-TYPE SILICON | VACANCY PAIR | LOCAL VIBRATIONAL-MODES | EPR | INTERSTITIAL-CARBON | IRRADIATED SILICON | SUBSTITUTIONAL-CARBON | ACCEPTOR | ATOM
Journal Article
Physical Review B, ISSN 0163-1829, 1995, Volume 52, Issue 11, pp. 8121 - 8131
The results of a comprehensive Green's-function calculation are reported for the structure and dynamics of the amphoteric behavior of silicon... 
LOCALIZED VIBRATIONAL-MODES | PHYSICS, CONDENSED MATTER | DOPED GAAS | DX CENTERS | III-V SEMICONDUCTORS | SPECTROSCOPY | LATTICE SITES | MOLECULAR-BEAM EPITAXY | DEFECT COMPLEXES | SUBSTITUTIONAL CARBON | PAIRS
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 08/2002, Volume 92, Issue 3, pp. 1582 - 1587
Carbon often appears in Si in concentrations above its solubility. In this article, we propose a comprehensive model that, taking diffusion and clustering into... 
POINT-DEFECTS | PHYSICS, APPLIED | SELF-DIFFUSION | LOCAL VIBRATIONAL-MODES | EPR | DOPANT DIFFUSION | VACANCIES | SUBSTITUTIONAL CARBON | Silicon | Research | Diffusion | Carbon
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 03/2001, Volume 89, Issue 5, pp. 2580 - 2587
We report a detailed study of the dependence of the vibrational modes in rapid thermal chemical vapor deposition grown Si1-x-yGexCy samples on substitutional... 
PHYSICS, APPLIED | SUBSTITUTIONAL CARBON INCORPORATION | SI1-YCY ALLOYS | CHEMICAL-VAPOR-DEPOSITION | RAMAN-SPECTROSCOPY | SILICON | GROWTH | SI1-X-YGEXCY ALLOYS | LAYERS | Alloys | Research
Journal Article
Journal of Applied Physics, ISSN 0021-8979, 04/2018, Volume 123, Issue 16, p. 161592
A previously unreported electron spin resonance (ESR) spectrum was found in γ-ray irradiated silicon by the detection of the change in microwave... 
DEFECTS | PHYSICS, APPLIED | SUBSTITUTIONAL-CARBON | EPR
Journal Article
PHYSICAL REVIEW B, ISSN 2469-9950, 09/2000, Volume 62, Issue 12, pp. R7723 - R7726
Ab initio density-functional calculations, employing the generalized-gradient approximation, have been used to determine formation energies U and the strain... 
PHYSICS, CONDENSED MATTER | ELECTRON-GAS | SI1-YCY ALLOYS | SEMICONDUCTORS | STABILITY | GERMANIUM-CARBON ALLOYS | MOLECULAR-BEAM EPITAXY | SILICON | TOTAL-ENERGY CALCULATIONS | SUBSTITUTIONAL CARBON | WAVE BASIS-SET
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 05/2001, Volume 16, Issue 5, pp. R41 - R49
Si1-xCx alloys have been studied using self-consistent-charge density-functional-based right-binding calculations. The origin of experimentally observed... 
PHYSICS, CONDENSED MATTER | DEFECTS | SI1-YCY ALLOYS | PRECIPITATION | AMORPHOUS-SILICON | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | MOLECULAR-BEAM EPITAXY | INTERSTITIAL-CARBON | RAMAN-SPECTROSCOPY | SUBSTITUTIONAL-CARBON | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
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