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IEEE Electron Device Letters, ISSN 0741-3106, 08/2014, Volume 35, Issue 8, pp. 868 - 870
We improved the characteristics of 4H-SiC Schottky barrier diodes (SBDs) by post-oxidation annealing in nitric oxide ambient (NO POA). Unlike the sacrificial... 
Breakdown voltage | Schottky diodes | Annealing | Silicon carbide | Schottky barriers | power semiconductor devices | Oxidation | semiconductor-metal interfaces | Leakage currents | Carbon | Surface treatment | silicon carbide (SiC) | SURFACE | SILICON-CARBIDE | RECTIFIERS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nano Letters, ISSN 1530-6984, 03/2015, Volume 15, Issue 3, pp. 2104 - 2110
The advent of chemical vapor deposition (CVD) grown graphene has allowed researchers to investigate large area graphene/n-silicon Schottky barrier solar cells.... 
silicon | native oxide | graphene | solar cell | LARGE-AREA | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | PERFORMANCE | MATERIALS SCIENCE, MULTIDISCIPLINARY | CHEMISTRY, PHYSICAL | NANOSCIENCE & NANOTECHNOLOGY | CHEMISTRY, MULTIDISCIPLINARY | FILMS | GROWTH | DIODES | LAYER | Solar cells | Semiconductors | Photovoltaic cells | Graphene | Barriers | Oxides | Devices | Optimization
Journal Article
VACUUM, ISSN 0042-207X, 01/2020, Volume 171, p. 109012
This study examined the temperature-dependent current-voltage (I-V) characteristics of the Ni/Au Schottky contact to beta-Ga2O3. The Au/Ni/beta-Ga2O3 Schottky... 
CONTACTS | Schottky diodes | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | HEIGHT | TRANSPORT | Schottky barrier parameters | ELECTRICAL CHARACTERISTICS | Double Gaussian distribution | Barrier inhomogeneities | Interface state density | beta-Ga2O3 | CURRENT-VOLTAGE CHARACTERISTICS
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2017, Volume 64, Issue 5, pp. 1932 - 1943
Journal Article
Semiconductor Science and Technology, ISSN 0268-1242, 10/2018, Volume 33, Issue 12, p. 125001
Temperature dependent electrical characterization of microscopic Pt/MoS2 Schottky diode fabricated using electron beam lithography has been studied. The diode... 
MoS | IV characteristics | barrier inhomogeneity | Schottky diode | CONTACTS | PHYSICS, CONDENSED MATTER | SEMICONDUCTOR | MoS2 | INSULATOR | HETEROSTRUCTURES | MATERIALS SCIENCE, MULTIDISCIPLINARY | IDEALITY | I-V characteristics | FIELD-EFFECT TRANSISTORS | DEPENDENCE | ENGINEERING, ELECTRICAL & ELECTRONIC | INTERFACES | METAL
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2019, Volume 40, Issue 9, pp. 1393 - 1395
Journal Article
IEEE Journal of Quantum Electronics, ISSN 0018-9197, 05/2010, Volume 46, Issue 5, pp. 633 - 643
Journal Article
Nano Letters, ISSN 1530-6984, 10/2016, Volume 16, Issue 10, pp. 6383 - 6389
Layered hexagonal boron nitride (h-BN) thin film is a dielectric that surpasses carrier mobility by reducing charge scattering with silicon oxide in diverse... 
MoS | Schottky barrier height | dipole alignment | substrate doping | h-BN | Coulomb scattering | interface trap density
Journal Article
Advanced Materials, ISSN 0935-9648, 10/2015, Volume 27, Issue 39, pp. 5875 - 5881
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 05/2017, Volume 64, Issue 5, pp. 2283 - 2290
Journal Article
Science, ISSN 0036-8075, 6/2012, Volume 336, Issue 6085, pp. 1140 - 1143
Despite several years of research into graphene electronics, sufficient on/off current ratio / on // off in graphene transistors with conventional device... 
Electric potential | Triodes | Schottky diodes | Semiconductors | Graphene | REPORTS | Antimony | Silicon | Transistors | Electric current | Diodes | LARGE-AREA | FILMS | DIODES | MULTIDISCIPLINARY SCIENCES | Engineering design | Usage | Semiconductor-metal boundaries | Materials | Design and construction | Methods | Electrons | Work functions | Barriers | Electronics | Pinning | Devices
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2019, Volume 30, Issue 3, p. 035206
Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However,... 
Coulomb screening | molybdenum ditelluride | Schottky barrier height | high-κ passivation | low-frequency noise | PHYSICS, APPLIED | MOS2 | MATERIALS SCIENCE, MULTIDISCIPLINARY | high-kappa passivation | NANOSCIENCE & NANOTECHNOLOGY | NOISE | SUPPRESSION | FIELD-EFFECT TRANSISTORS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 04/2018, Volume 39, Issue 4, pp. 556 - 559
Journal Article