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Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 3/2017, Volume 28, Issue 5, pp. 3987 - 3996
Journal Article
Composites Part B, ISSN 1359-8368, 02/2014, Volume 57, pp. 25 - 30
Journal Article
by Sun, Y and Kang, XW and Zheng, YK and Lu, J and Tian, XL and Wei, K and Wu, H and Wang, WB and Liu, XY and Zhang, GQ
ELECTRONICS, ISSN 2079-9292, 05/2019, Volume 8, Issue 5, p. 575
Gallium nitride (GaN)-based vertical power Schottky barrier diode (SBD) has demonstrated outstanding features in high-frequency and high-power applications.... 
CONTACTS | FREESTANDING GAN | ACTIVATION | DESIGN | vertical power devices | P-GAN | BREAKDOWN-VOLTAGE | ENGINEERING, ELECTRICAL & ELECTRONIC | GaN | edge termination techniques | EDGE TERMINATION | LEAKAGE CURRENT MECHANISMS | CURRENT TRANSPORT | RECTIFIERS | Schottky barrier diode (SBD)
Journal Article
Journal of Materials Science: Materials in Electronics, ISSN 0957-4522, 1/2018, Volume 29, Issue 1, pp. 159 - 170
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2018, Volume 65, Issue 8, pp. 3507 - 3513
This paper reports a comprehensive study on the anisotropic electrical properties of vertical ( \overline {\textsf... 
Gallium | Anisotropic magnetoresistance | Crystal anisotropy | semiconductor | Surface morphology | Schottky barrier diodes (SBDs) | Crystals | gallium oxide | Rough surfaces | Substrates | power electronics | Optical surface waves
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 04/2013, Volume 34, Issue 4, pp. 493 - 495
We fabricated gallium oxide (Ga2O3) Schottky barrier diodes using beta-Ga2O3 single-crystal substrates produced by the floating-zone method. The crystal... 
gallium oxide (Ga2O3) | Breakdown voltage | single crystal | EDGE | Schottky barrier diode (SBD) | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
ECS Transactions, ISSN 1938-5862, 2013, Volume 53, Issue 2, pp. 171 - 176
Conference Proceeding
IEEE Electron Device Letters, ISSN 0741-3106, 2013, Volume 34, Issue 4, pp. 493 - 495
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 08/2008, Volume 55, Issue 8, pp. 1954 - 1960
Journal Article
Journal of Alloys and Compounds, ISSN 0925-8388, 2012, Volume 513, pp. 107 - 111
► – and / – characteristics of Al/rhodamine-101/ -GaAs SBDs were investigated in between 110 and 290 K at 1 MHz. ► The effect of was taken into account unlike... 
Temperature dependence | Intersection behavior of C– V– T plots | Series resistance | Al/rhodamine-101/ n-GaAs Schottky barrier diodes (SBDs) | Negative capacitance | Intersection behavior of C-V-T plots | Al/rhodamine-101/n-GaAs Schottky barrier diodes (SBDs)
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2018, Volume 65, Issue 2, pp. 622 - 628
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 09/2001, Volume 48, Issue 9, pp. 2148 - 2153
Journal Article
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, ISSN 0217-9792, 01/2018, Volume 32, Issue 1
Cross-linked polyvinyl alcohol (PVA) graphene oxide (GO) nanocomposites were prepared by simple solution-mixing route and characterized by Raman, UV visible... 
CAPACITANCE-VOLTAGE | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | poly(vinyl alcohol) | Schottky barrier diodes (SBDs) | Graphene oxide | PHYSICS, MATHEMATICAL | nanocomposites | cross-link
Journal Article
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