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2017, 1, ISBN 9789814774093, viii, 297 pages
GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example,... 
Power electronics | Equipment and supplies | Materials | Gallium nitride | Materials Science | Optoelectronics | Microelectronics
Book
01/2011, 1, ISBN 9783642111242, 538
The book starts with basic semiconductor physics, followed by some aspects of production technology. It explains power diodes, thyristors, MOSFETs and IGBTs as... 
Power semiconductors | Research | Power Electronics, Electrical Machines and Networks | Condensed Matter Physics | Electronics and Microelectronics, Instrumentation | Engineering | Semiconductor switches | Power electronics | Diodes, Switching
eBook
SAE technical paper series, Volume 981284.
Silicon Carbide (SiC) is an emerging semiconductor material which has been widely predicted to be superior to both Si and GaAs in the area of power electronic... 
Fuels and Energy Sources | Semiconductors | Switches | Electric motors
eJournal
physica status solidi (a), ISSN 1862-6300, 01/2014, Volume 211, Issue 1, pp. 21 - 26
Gallium oxide (Ga2O3) is a strong contender for power electronic devices. The material possesses excellent properties such as a large bandgap of 4.7–4.9 eV for... 
field‐effect transistors | molecular beam epitaxy | Ga2O3 | Schottky barrier diodes | MESFET | power devices | field-effect transistors | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | MATERIALS SCIENCE, MULTIDISCIPLINARY | GAN | GROWTH | BETA-GA2O3 SINGLE-CRYSTALS | EDGE | Single crystals | Gallium oxides | Electronic devices | Semiconductors | Epitaxy | Breakdown | Molecular beam epitaxy | MESFETs
Journal Article
IEEE Transactions on Industrial Electronics, ISSN 0278-0046, 10/2017, Volume 64, Issue 10, pp. 8193 - 8205
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 12/2010, Volume 25, Issue 12, pp. 2889 - 2896
Microgrids with distributed generation sources are critical for reduction of greenhouse gas emissions and imported energy. However, power converters and... 
Insulated gate bipolar transistors | Thyristors | MOSFET | IGBT | Silicon carbide | microgrid | Converters | Logic gates | Silicon | SiC | MOSFETs | silicon carbide | IGBTS | ENGINEERING, ELECTRICAL & ELECTRONIC | Metal oxide semiconductor field effect transistors | Bipolar transistors | Forecasts and trends | Properties | Innovations
Journal Article
SAE technical paper series, Volume 2004-01-1682.
With the requirements for reducing the emissions and improving the fuel economy, the automotive companies are developing hybrid, 42 V and fuel cell vehicles.... 
Electronic equipment | Semiconductors | Fuel cells | Test procedures
eJournal
10/2018, Woodhead Publishing series in electronic and optical materials, ISBN 9780081023068, 420
This title provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an... 
Wide gap semiconductors | Power semiconductors
eBook
Japanese Journal of Applied Physics, ISSN 0021-4922, 04/2015, Volume 54, Issue 4, pp. 40103 - 1-040103-27
Journal Article
IEEE Journal of Emerging and Selected Topics in Power Electronics, ISSN 2168-6777, 09/2016, Volume 4, Issue 3, pp. 707 - 719
Journal Article
IEEE Transactions on Power Electronics, ISSN 0885-8993, 02/2020, Volume 35, Issue 2, pp. 1882 - 1898
State-of-the-art silicon carbide (SiC) power devices provide superior performance over silicon devices with much higher switching frequencies/speed and lower... 
Semiconductor device modeling | EMI | Adaptation models | MOSFET | Silicon carbide | Active gate driver (AGD) | Switches | Logic gates | Gate drivers | trajectory model
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 09/2017, Volume 38, Issue 9, pp. 1305 - 1308
In this letter, we introduce and demonstrate the concept of slanted tri-gates to enhance the breakdown voltage (V BR ) in lateral GaN power devices.... 
Electric breakdown | HEMT | breakdown | tri-gate | slanted tri-gate | Gallium nitride | field plate | GaN | Logic gates | Nanowires | Wide band gap semiconductors | Electric fields | Aluminum gallium nitride | ELECTRON-MOBILITY TRANSISTORS | PLATE MODEL | FIELD-EFFECT TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC | BREAKDOWN VOLTAGE | HFETS | ALGAN/GAN HEMTS
Journal Article
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