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Applied Surface Science, ISSN 0169-4332, 01/2019, Volume 465, pp. 591 - 595
In this study, a de-bondable wafer bonding method for silicon carbide (SiC) that can sustain rapid thermal annealing (RTA) at ∼1273 K has been realized. Two... 
Wafer bonding | Rapid thermal annealing | De-bonding | Precipitated carbon | Thin SiC device | Bonding interface | PHYSICS, CONDENSED MATTER | PHYSICS, APPLIED | GRAPHENE | CHEMISTRY, PHYSICAL | DIODE | SURFACE | MEMS | MATERIALS SCIENCE, COATINGS & FILMS | Annealing | Silicon | Silicon carbide | Precipitation (Meteorology) | Analysis | Production processes
Journal Article
Applied Surface Science, ISSN 0169-4332, 10/2014, Volume 316, Issue 1, pp. 643 - 648
Journal Article
Applied Surface Science, ISSN 0169-4332, 04/2013, Volume 270, pp. 219 - 224
Journal Article
Ceramics International, ISSN 0272-8842, 04/2019, Volume 45, Issue 5, pp. 6552 - 6555
Integration of Ga2O3 on SiC substrate with a high thermal conductivity is one of the promising solutions to reduce the self-heating of Ga2O3 devices. Direct... 
Direct wafer bonding | Ga2O3 | SiC | Room temperature | MATERIALS SCIENCE, CERAMICS | FIELD-EFFECT TRANSISTORS
Journal Article
Materials Science Forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 88 - 91
In this study, influence of both Si/H2 ratio and C/Si ratio on growth rate uniformity and carrier concentration uniformity of n-type 4H-SiC epitaxial films... 
Growth rate uniformity | Epitaxial growth | 4H-SiC | High speed wafer rotation vertical CVD tool | N-type doping | Carrier concentration uniformity | Growth rate | Carrier density | Rotation
Journal Article
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 07/2014, Volume 251, pp. 48 - 55
The application of catalyst nanoparticles in the slurry is developed for chemical mechanical planarization (CMP) of on-axis Si-face (0001) SiC wafer, so as to... 
Removal | Chemical mechanical planarization (CMP) | Silicon carbide (SiC) | Catalyst | Atomic step structure | PHYSICS, APPLIED | GAN | DAMAGE | MATERIALS SCIENCE, COATINGS & FILMS | Nanoparticles | Silicon carbide
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 1133 - 1136
Wafer-scale graphene on SiC with uniform structural features was grown on semi-insulating 4 inch on-axis 4H-SiC (0001) face. Growth was carried out in a... 
Epitaxial graphene | SiC | Wafer-scale | High mobility | Silicon carbide | Atmospheric pressure | Graphene | Variability | Morphology | Materials science | Hall effect | Electrostatics
Journal Article
Tribology International, ISSN 0301-679X, 07/2015, Volume 87, pp. 145 - 150
Towards sapphire and SiC wafer, clear and regular atomic step morphology could be observed all-over the surface via AFM. However, the variations of atomic step... 
Chemical mechanical polishing (CMP) | Atomic step | Sapphire | Silicon carbide (SiC) | Sapphire Silicon carbide (SiC) | CARBIDE | GAN | ENGINEERING, MECHANICAL | Atomic force microscopy | Silicon carbide | Analysis | Tribology | Mechanical polishing | Wafers | Morphology | Formations | Chemical-mechanical polishing
Journal Article
Journal Article
MRS Bulletin, ISSN 0883-7694, 11/2012, Volume 37, Issue 12, pp. 1149 - 1157
Epitaxial graphene (EG) has attracted considerable interest because of its extraordinary properties and ability to be synthesized on the wafer scale. These... 
6H-SIC | EVAPORATION | TRANSISTORS | PHYSICS, APPLIED | SI-FACE | CARRIER MOBILITY | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | HETEROEPITAXIAL GRAPHITE | SILICON-CARBIDE | BILAYER GRAPHENE | ELECTRONICS
Journal Article
Journal of Manufacturing Science and Engineering, Transactions of the ASME, ISSN 1087-1357, 12/2015, Volume 137, Issue 6
Wire saws with fixed diamond abrasive are often used to cut hard and brittle materials owning to the wire saw's narrow kerf, low cutting force, and minimal... 
wire saw force modeling | wire saw force adaptive control | SiC monocrystal | CARBIDE | INCLUSIONS | DIAMOND | SILICON | ENGINEERING, MANUFACTURING | INGOT | ENGINEERING, MECHANICAL
Journal Article
Materials Science Forum, ISSN 0255-5476, 10/2016, Volume 874, pp. 407 - 414
Experiment was performed to examine the plane polishing of SiC single crystal wafer by using the chemical magnetorheological finishing (CMRF) technique. The... 
Chemical magnetorheological finishing | Process parameter | SiC single crystal wafer | Surface roughness | Single crystals | Silicon carbide | Machining | Carbonyl powders | Polishing | Magnetorheological fluids | Finishing
Journal Article
Materials Science Forum, ISSN 0255-5476, 10/2016, Volume 874, pp. 415 - 419
In order to avoid the environmental pollution and the harm to body of traditional polishing slurries, an environment-friendly chemical mechanical polishing... 
Environment-friendly | SiC wafer | Chemical mechanical polishing | Slurry | Mechanical polishing | Dioxides | Silicon carbide | Wafers | Polishing | Nanostructure | Ultraviolet | Slurries
Journal Article
Materials Science Forum, ISSN 0255-5476, 05/2016, Volume 858, pp. 201 - 204
For the popularization of SiC power device, improvement on both productivity and quality of 150 mm diameter SiC epitaxial wafer is inevitable. With highly... 
C-face | 4H-SiC epitaxial growth | Surface defect | Surface morphology | 150-mm diameter | Uniformity | Productivity | Epitaxial layers | Silicon carbide | Reactors | Wafers | Variability | Epitaxy | Optimization
Journal Article
Surface & Coatings Technology, ISSN 0257-8972, 09/2016, Volume 302, pp. 320 - 326
Ion irradiation of interfaces causes intermixing of the adjacent regions, which leads to compound formation in certain cases. With the aim of building, some nm... 
Ion mixing | SiC nanoparticles | TRYDIN | Composite coating | SiC rich nano coating | PHYSICS, APPLIED | RESISTANCE | CORROSION | MATERIALS SCIENCE, COATINGS & FILMS | Silicon carbide | Ion irradiation | Simulation | Silicon substrates | Irradiation | Formations | Etching | Nanostructure
Journal Article
Journal Article
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