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Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 307 - 310
A mirror projection electron microscopy (MPJ), non destructive, high spatial resolution and high throughput method, is useful for defect inspection in silicon carbide (SiC) wafer... 
Non destructive inspection | Mirror projection electron microscopy | SiC | Dislocation | Edge dislocations | Silicon carbide | Wafers | Morphology | Projection | Electron microscopy | Image contrast | Dislocations
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
Conference Proceeding
Journal of Nuclear Materials, ISSN 0022-3115, 03/2018, Volume 500, pp. 176 - 183
... on the type of sample. In this work five different types (coatings and wafers) of SiC produced by chemical vapor deposition were characterized by electron backscatter diffraction (EBSD... 
FISSION-PRODUCTS | PALLADIUM | SILVER TRANSPORT | DIFFUSION MECHANISMS | NUCLEAR SCIENCE & TECHNOLOGY | BEHAVIOR | MATERIALS SCIENCE, MULTIDISCIPLINARY | FUEL-PARTICLES | TRISO COATED PARTICLES | AGR-1 EXPERIMENT | SIC LAYER | MICROSTRUCTURE | Grain boundaries | Silicon | Silicon carbide | Coatings | Chemical vapor deposition
Journal Article
MATERIALS, ISSN 1996-1944, 10/2019, Volume 12, Issue 20, p. 3293
In this work, results related to the temperature influence on the homo-epitaxial growth process of 3C-SiC is presented. The seed for the epitaxial layer was... 
CVD | DEFECTS | growth temperature | KOH | stacking faults | 3C-SiC homo-epitaxy | MATERIALS SCIENCE, MULTIDISCIPLINARY | GROWTH | bulk growth | THIN-FILM | Organic chemistry | Thermal expansion | Crystal defects | Silicon carbide | Quality | Thick films | Silicon substrates | Silicon | Two materials | Chemical vapor deposition | Investigations | Defects | cvd | koh | 3c-sic homo-epitaxy
Journal Article
International Journal of Automation Technology, ISSN 1881-7629, 2018, Volume 12, Issue 2, pp. 160 - 169
Journal Article
Materials science forum, ISSN 0255-5476, 09/2007, Volume 556-557, pp. 753 - 756
We report SiC wafer polishing study to achieve high throughput with extremely flat, smooth and damageless surface... 
Wafer | Polish | CMP
Journal Article
Materials science forum, ISSN 0255-5476, 02/2014, Volume 778-780, pp. 402 - 406
...) wafer as non destructive, high spatial resolution and high throughput method. Each of three type dislocations, threading screw dislocation (TSD... 
Non destructive inspection | Mirror projection electron microscopy | SiC | Dislocation | Silicon carbide | Wafers | Inspection | Projection | Basal plane | Electron microscopy | Dislocations | Defects
Journal Article
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 271 - 274
In this paper, we report on a novel direct wafer bonding technique; Si (111) wafers to polycrystalline silicon carbide carrier wafers... 
MOS | Wafer bonding | Wafer bow | 3C-SiC | Platforms | Epitaxial layers | Silicon carbide | Wafers | Silicon | Epitaxial growth | Bonding | Crystal structure
Journal Article
Key engineering materials, ISSN 1013-9826, 07/2015, Volume 656-657, pp. 204 - 207
We have developed a novel polishing technique by scanning a small magnetic tool in hydrogen peroxide solution for smoothing a 2-inch SiC wafer... 
Hydroxyl radicals (OH radicals) | Local polishing | SiC substrate | Single crystals | Scanning | Hydrogen peroxide | Silicon carbide | Smoothing | Wafers | Polishing | Surface roughness
Journal Article
Materials science forum, ISSN 0255-5476, 09/2008, Volume 600-603, pp. 7 - 10
Recent advances in PVT c-axis growth process have shown a path for eliminating micropipes in 4HN-SiC, leading to the demonstration of zero micropipe density 100 mm 4HN-SiC wafers... 
Micropipe | Substrate | Silicon carbide | Seeded sublimation | 4HN-SiC | SiC | Diameter | Wafer | Crystal | Defects | Dislocation | PVT
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 172 - 175
We present in-situ observations of the dynamical operation of multiple double-ended Frank-Read dislocation sources in a PVT-grown 4H-SiC wafer under thermal gradient stresses... 
Frank-Read source | Heat treatment | In-situ studies | 4H-SiC | X-ray topography | X ray topography | Temperature | Synchrotron radiation | Crystals
Journal Article
Applied Physics Letters, ISSN 0003-6951, 2009, Volume 94, Issue 10, p. 103510
.... The quality of the SiO2, formed by oxidation of a wafer-bonded silicon layer reported here has the potential to realize a number of innovative heterojunction concepts and devices, including the fabrication of high quality and reliable SiO2 gate oxides. 
elemental semiconductors | semiconductor thin films | PHYSICS, APPLIED | silicon | silicon compounds | interface states | oxidation | semiconductor heterojunctions | SIC/SIO2 INTERFACE | MIS capacitors
Journal Article
Materials science forum, ISSN 0255-5476, 06/2015, Volume 821-823, pp. 524 - 527
A novel dicing technology that utilizes femtosecond pulsed lasers (FSPLs) are demonstrated as a high-speed and cost-effective dicing process for SiC wafers... 
SiC wafer | Femtosecond pulsed laser | Dicing | Silicon carbide | Wafers | Chips | High speed | Lattice strain | Cleavage | Femtosecond pulsed lasers | Saws
Journal Article
SOLAR ENERGY MATERIALS AND SOLAR CELLS, ISSN 0927-0248, 09/2008, Volume 92, Issue 9, pp. 1059 - 1066
Commercial multicrystalline Si (mc-Si) wafers containing SiC and Si3N4 inclusions and wire-sawing defects oil their surfaces were collected from an mc-Si wafer manufacturer... 
PARTICLES | wire sawing | ENERGY & FUELS | multicrystalline silicon | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | SiC particles | photovoltaic materials | Si3N4 particles
Journal Article
Materials science forum, ISSN 0255-5476, 06/2018, Volume 924, pp. 527 - 530
.... This process uses a polarized light microscope to scan the wafer. The pictures taken are analyzed with a program that produces a micropipe map as well as numerical defect distribution data in a text file... 
Characterization | Micropipe | Micropipe density | Non-destructive | SiC | Defect counting | Pictures | X ray topography | Mapping | Polarized light | Substrates
Journal Article
2016 European Conference on Silicon Carbide & Related Materials (ECSCRM), ISSN 1662-9752, 09/2016, Volume 897, pp. 1 - 1
...m thick 4" n-SiC epitaxial free standing wafers by separating them from a 350 μm thick n+ SiC substrate. After the substrate is completely removed, free standing... 
Insulated gate bipolar transistors | Microwave measurement | IGBT | Silicon carbide | wide bandgap semiconductor | Power device | Etching | Epitaxial growth | SiC | Substrates | Electrochemical etching | Wide bandgap semiconductor
Conference Proceeding
Materials science forum, ISSN 0255-5476, 01/2013, Volume 740-742, pp. 193 - 196
We grew epitaxial layers on 3-inch epitaxial wafers with a vicinal off-angle, using a horizontal hot-wall chemical vapor deposition system that had a reactor capacity of 3 x 150 mm. Uniformity (σ/mean... 
Off angle | Morphology | Vicinal | Triangular defect | Epitaxial growth | 4H-SiC | Uniformity | Electric potential | Epitaxial layers | Wafers | Materials science | Inclusions | Diodes | Carrier density | Chemical vapor deposition
Journal Article
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