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ChemSusChem, ISSN 1864-5631, 05/2017, Volume 10, Issue 9, pp. 1892 - 1897
...‐pot reductive amination of carbonyl compounds with nitro compounds using formic acid as the hydrogen donor over a heterogeneous non‐noble‐metal catalyst (Co‐Nx/C‐800... 
transfer hydrogenation | nitro compounds | secondary amines | reductive amination | carbonyl compounds | Pyrolysis | Oxidoreductases | Cobalt | Hydrogenation | Formic acid | Organic acids | Noble metals | Catalysts | Silicon dioxide
Journal Article
Advances in silicon chemistry, ISSN 1059-4256, 1991
Journal
Chemistry : a European journal, ISSN 0947-6539, 2015, Volume 21, Issue 52, pp. 18930 - 18933
.... Compound 2, when reacted with one molar equiv selenium and sulfur, affords the silanechalcogenones 4 a and 4 b (ArSi(NHC)(E)PPh2, 4 a: E=Se, 4 b: E=S), respectively... 
SERIES | STABLE SILYLENES | N-HETEROCYCLIC-CARBENE | REACTIVITY | STRUCTURAL-CHARACTERIZATION | olefin analogues | SILANONE | silicon | LIGANDS | DOUBLE-BONDS | CHEMISTRY | zwitterions | multiple bonds | phosphorus | CHEMISTRY, MULTIDISCIPLINARY | Nitrous oxides | Carbon dioxide | Insertion | Selenium | Sulfur | Bonding | Conversion | Adducts
Journal Article
Angewandte Chemie (International ed.), ISSN 1433-7851, 2017, Volume 56, Issue 27, pp. 7720 - 7738
Journal Article
Angewandte Chemie (International ed.), ISSN 1433-7851, 2014, Volume 53, Issue 50, pp. 13698 - 13700
.... Theoretical investigations of compound 2 reveal a significant valence 5s‐orbital contribution of the tin atom forming six strongly polarized tin–carbon bonds. Add in to tin... 
tin | metalates | computational chemistry | hypercoordinate compounds | pyridyl ligands | Tin | Computational chemistry | Hypercoordinate compounds | Metalates | Pyridyl ligands | LITHIUM-TIN EXCHANGE | COMPLEXES | 10-C-5 BEARING | CHEMISTRY, MULTIDISCIPLINARY | MOLECULES | CARBON COMPOUND | POPULATION ANALYSIS | LIGAND | BOND | Synthesis | Chemical bonds | Forming | Ligands | Silicon | Inert | Octets | Carbon
Journal Article
Nature (London), ISSN 1476-4687, 2011, Volume 479, Issue 7373, pp. 317 - 323
...: group III-V compound semiconductors. The outstanding electron transport properties of these materials might be central to the development of the first nanometre... 
CAPACITANCE-VOLTAGE | TRANSISTOR | SIGE | INAS PHEMTS | MOBILITY | MULTIDISCIPLINARY SCIENCES | GHZ | ATOMIC-LAYER-DEPOSITION | FUTURE | AL2O3 | MOSFETS | Nanoparticles | Semiconductors | Forecasts and trends | Models | Microelectronics | Properties | Miniature electronic equipment | Electric properties | Manufacturing | Quality | Semiconductor research | Satellite communications | CMOS | Semiconductor devices | Electronics | Silicon | Logic | Transistors | Density
Journal Article