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Physical Review B - Condensed Matter and Materials Physics, ISSN 1098-0121, 08/2014, Volume 90, Issue 5
High-throughput density functional theory (DFT) calculations have been performed on the Li-Si and Li-Ge systems. Lithiated Si and Ge, including their... 
PHYSICS, CONDENSED MATTER | ION BATTERIES | PHASE | AMORPHOUS-SILICON | STRUCTURAL-CHANGES | CRYSTAL-STRUCTURE | AB-INITIO | ANODES | HIGH-CAPACITY | 1ST PRINCIPLES | ELECTRONIC-STRUCTURE | Physics - Materials Science
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 10/2017, Volume 50, Issue 45, p. 455301
The solid-phase reaction of ultrathin (<= 10 nm) Ni films with different Ge substrates (single-crystalline (100), polycrystalline, and amorphous) was studied.... 
solid-phase reaction | thin film | germanide | texture | PHYSICS, APPLIED | SILICON THIN-FILMS | AMORPHOUS-SILICON | NICKEL GERMANIDES | INDUCED CRYSTALLIZATION | AGGLOMERATION | TEMPERATURE | KINETICS | EPITAXIAL FORMATION | SILICIDES | NUCLEATION
Journal Article
Optics Express, ISSN 1094-4087, 02/2015, Volume 23, Issue 3, pp. 3316 - 3326
Platinum germanides (PtGe) were investigated for infrared plasmonic applications. Layers of Pt and Ge were deposited and annealed. X-ray diffraction identified... 
SILICIDES | OPTICS | METALS | PHOTONICS | DOPED SILICON
Journal Article
CrystEngComm, ISSN 1466-8033, 2017, Volume 19, Issue 15, pp. 2072 - 2078
We report the formation of NiGe nanowires by the thermal decomposition of diphenylgermane, in the presence of a bulk Ni foil, in a solvent vapor growth system.... 
SILICON-NANOWIRE | PERFORMANCE | AXIAL HETEROSTRUCTURE NANOWIRES | NANOSTRUCTURES | METAL | CRYSTALLOGRAPHY | TRANSPORT PROPERTIES | CHEMISTRY, MULTIDISCIPLINARY | CATALYSTS | Solvents | High resolution | Foils | Formations | Nickel | Vapour | Nanowires | Germanides
Journal Article
CrystEngComm, ISSN 1466-8033, 2017, Volume 19, Issue 15, pp. 2072 - 2078
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 06/2016, Volume 49, Issue 27, p. 275307
Silicon or germanium-based transistors are nowadays used in direct contact with silicide or germanide crystalline alloys for semiconductor device applications.... 
germanides | silicides | x-ray diffraction | thermal expansion | anisotropy | PHYSICS, APPLIED | MNP-TYPE PHASES | SILICON | TECHNOLOGIES | FILMS | COEFFICIENT | TRANSITIONS | STRESS
Journal Article
Optical Materials Express, ISSN 2159-3930, 04/2018, Volume 8, Issue 4, pp. 968 - 982
Metal germanide thin films were investigated for infrared plasmonic applications. Thin films of copper and nickel were deposited onto amorphous germanium thin... 
THIN-FILMS | MODES | PHOTONICS | MATERIALS SCIENCE, MULTIDISCIPLINARY | SIZE | SCHERRER | SILICIDES | COPPER | OPTICS | DOPED SILICON | Stoichiometry | Atomic force microscopy | Electrical properties | Atomic beam spectroscopy | Photomicrographs | X-ray diffraction | Polaritons | Palladium | Ellipsometry | Propagation modes | Thin films | Platinum | Spectrum analysis | Plasmonics | Complex permittivity | Germanides
Journal Article
Chemical communications (Cambridge, England), ISSN 1359-7345, 08/2019, Volume 55, Issue 64, pp. 9539 - 9542
We report herein the synthesis of symmetric and non-symmetric bis-amidinato-germylene Fe(CO)3 complexes, as well as the preparation of the corresponding... 
SILYLENE | LIGANDS SYNTHESES | N-HETEROCYCLIC GERMYLENES | STANNYLENES | SILICON | TIN | DERIVATIVES | CHEMISTRY, MULTIDISCIPLINARY
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 10/2012, Volume 33, Issue 10, pp. 1336 - 1338
We report high-performance p-channel Ω-gate germanium (Ge) p-channel multigate field-effect transistor (MuGFET) with low-temperature Si 2 H 6 surface... 
MuGFET | Doping | Logic gates | Germanium | Metal S/D | Silicon | Electron devices | Substrates | Passivation | Disilane passivation | germanium | FINFET | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 10/2013, Volume 25, Issue 39, pp. 395501 - 6
From first-principles calculations, we proposed a silicon germanide (SiGe) analog of silicene. This SiGe monolayer is stable and free from imaginary frequency... 
GRAPHENE | GAS | PHYSICS, CONDENSED MATTER | ENERGY | GROWTH | Band structure of solids | Condensed matter | Mathematical analysis | Monolayers | Electronics | Germanium | Hydrogen atoms | Silicon germanides
Journal Article
Applied Physics Reviews, ISSN 1931-9401, 09/2016, Volume 3, Issue 3
Silicides and germanides are compounds consisting of a metal and silicon or germanium. In the microelectronics industry, silicides are the material of choice... 
COBALT SILICIDES | TEXTURE | GERMANIUM | THIN FILMS | GRAIN BOUNDARIES | TITANIUM SILICIDES | GERMANIDES | SILICON | CRYSTALLOGRAPHY | NICKEL SILICIDES | MATERIALS SCIENCE | MICROELECTRONICS
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 02/2005, Volume 26, Issue 2, pp. 81 - 83
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric, HfN-TaN metal gate and... 
Schottky | MOSFET | Germanium | High-Κ | Metal gate | CONTACTS | FIELD-EFFECT TRANSISTOR | high-kappa | TEMPERATURE | ELECTRODE | SOURCE/DRAIN | germanium | metal gate | MOSFETS | ENGINEERING, ELECTRICAL & ELECTRONIC | Drains | Silicon | Dielectrics | Channels | MOSFETs | Gates | Contact
Journal Article
Journal of Physics Condensed Matter, ISSN 0953-8984, 09/2013, Volume 25, Issue 35, pp. 355403 - 6
Journal Article
Materials Science & Engineering B, ISSN 0921-5107, 2008, Volume 154, Issue 1-3, pp. 163 - 167
Thin film germanide reactions are often declared to be the same as silicides reactions which were far more studied. In this paper, we present a comparative... 
Thin films | Solid-state reaction | Linear-parabolic | Kinetics | Silicides | Germanides | THIN-FILMS | PHYSICS, CONDENSED MATTER | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | ANISOTROPY | ATOMIC-STRUCTURE | GROWTH-KINETICS | NUCLEATION | NISI SINGLE-CRYSTALS | Thermal properties | Nickel | Dielectric films | Anisotropy
Journal Article
Physical Review B (Condensed Matter and Materials Physics), ISSN 1098-0121, 08/2014, Volume 90, Issue 5
High-throughput density functional theory (DFT) calculations have been performed on the Li-Si and Li-Ge systems. Lithiated Si and Ge, including their... 
Stoichiometry | Electric potential | Mathematical analysis | Voltage | Lithium | Silicon | Atomic structure | Crystal structure
Journal Article
ECS Journal of Solid State Science and Technology, ISSN 2162-8769, 2015, Volume 4, Issue 9, pp. P387 - P392
Rhodium Schottky barrier contacts on germanium substrates are investigated in terms of electrical, physical, and chemical properties. The Rh, deposited by... 
NICKEL GERMANIDE | PHYSICS, APPLIED | FILMS | TEMPERATURE-DEPENDENCE | IRIDIUM | THERMAL-TREATMENT | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | PLATINUM | SILICIDES | DIODES | HEIGHT
Journal Article
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, ISSN 2162-8769, 2015, Volume 4, Issue 9, pp. P387 - P392
Rhodium Schottky barrier contacts on germanium substrates are investigated in terms of electrical, physical, and chemical properties. The Rh, deposited by... 
NICKEL GERMANIDE | PHYSICS, APPLIED | FILMS | TEMPERATURE-DEPENDENCE | IRIDIUM | THERMAL-TREATMENT | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | PLATINUM | SILICIDES | DIODES | HEIGHT
Journal Article
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