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Journal of magnetism and magnetic materials, ISSN 0304-8853, 2019, Volume 469, pp. 515 - 521
Journal Article
Nano Letters, ISSN 1530-6984, 12/2011, Volume 11, Issue 12, pp. 5438 - 5442
Journal Article
Nature photonics, ISSN 1749-4893, 2014, Volume 8, Issue 6, pp. 482 - 488
.... We show that Ge-rich Si1-xGex virtual substrates can act as a passive, high-quality optical waveguide on which low-temperature, epitaxial growth of Ge quantum-well devices can be realized... 
MONOLITHIC INTEGRATION | PHYSICS, APPLIED | QUANTUM-WELL STRUCTURES | HETEROSTRUCTURES | SI | WAVE-GUIDE PHOTODETECTOR | ABSORPTION | OPTICS | HIGH-SPEED | ELECTROABSORPTION MODULATOR | GE | RECEIVER | Quantum wells | Germanium | Silicon | Epitaxial growth | Devices | Interconnections | Silicon germanides | Photonics
Journal Article
Journal of Physics D: Applied Physics, ISSN 0022-3727, 09/2010, Volume 43, Issue 37, pp. 374012 - 374012
By forming an ultrathin (similar to 100 nm) SiC film on Si substrates and by annealing it at similar to 1500 K in vacuo, few-layer graphene is formed on Si substrates... 
PHONONS | PHYSICS, APPLIED | CARBON | FILM | RAMAN-SPECTROSCOPY | GROWTH | DISORDER | GRAPHITE | MONOMETHYLSILANE | STACKING ORDER | SCATTERING | CMOS | Annealing | Silicon carbide | Graphene | Silicon substrates | Feasibility | Silicon | Orientation
Journal Article
Journal of the American Chemical Society, ISSN 0002-7863, 04/2019, Volume 141, Issue 13, pp. 5392 - 5401
.... Here we present a MoS2–OH bilayer-mediated method that can fabricate inch-sized monolayer MoS2 on arbitrary substrates... 
LARGE-AREA | TRANSITION-METAL DICHALCOGENIDES | MONO LAYER | FILMS | CHEMICAL-VAPOR-DEPOSITION | WORK FUNCTION | ATOMIC LAYERS | LAYER MOS2 | SURFACE | PHASE GROWTH | CHEMISTRY, MULTIDISCIPLINARY | MATERIALS SCIENCE
Journal Article