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1. Single event effects in aerospace
by Petersen, Edward
2011, 1st ed., ISBN 9780470767498, xiii, 502
Electromagnetic pulse | Electronic apparatus and appliances | Protection | Astrionics | Effect of radiation on | Semiconductors | Electronics | ECHNOLOGY & ENGINEERING
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2. Full Text An infrastructure for accurate characterization of single-event transients in digital circuits
by Savulimedu Veeravalli, Varadan and Polzer, Thomas and Schmid, Ulrich and Steininger, Andreas and Hofbauer, Michael and Schweiger, Kurt and Dietrich, Horst and Schneider-Hornstein, Kerstin and Zimmermann, Horst and Voss, Kay-Obbe and Merk, Bruno and Hajek, Michael
Microprocessors and microsystems, ISSN 0141-9331, 11/2013, Volume 37, Issue 8, pp. 772 - 791
Elastic pipelines | Single-event transients | Asynchronous digital design | Single-event upsets | Muller C-elements | Radiation fault-tolerance | SET injection experiments | LFSR counters | Spice models | TCAD models | Ion beam radiation
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3. Full Text High-performance and single event double-upset-immune latch design
by Zhang, Haineng and Liu, Zhongyang and Jiang, Jianwei and Xiao, Jun and Zhang, Zhengxuan and Zou, Shichang
Electronics letters, ISSN 0013-5194, 11/2020, Volume 56, Issue 23, pp. 1243 - 1245
Circuits and systems | recently reported latches | flip‐flops | MOSFET | interlocked branch circuits | SEDU | radiation hardening (electronics) | NMOS transistors | single event double‐upset‐fully‐tolerant latch | single event double‐upset‐immune latch design | PMOS transistors | CMOS logic circuits | 84.56% area‐power‐delay product saving | CMOS integrated circuits | logic design | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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4. Full Text Analyzing the Influence of the Angles of Incidence and Rotation on MBU Events Induced by Low LET Heavy Ions in a 28-nm SRAM-Based FPGA
by Tonfat, Jorge and Lima Kastensmidt, Fernanda and Artola, Laurent and Hubert, Guillaume and Medina, Nilberto H and Added, Nemitala and Aguiar, Vitor A. P and Aguirre, Fernando and Macchione, Eduardo L. A and Silveira, Marcilei A. G
IEEE transactions on nuclear science, ISSN 0018-9499, 08/2017, Volume 64, Issue 8, pp. 2161 - 2168
Sensitivity | single-event effects (SEEs) | Field-programmable gate array (FPGA) | multiple bit upset (MBU) | Organizations | Tools | layout analysis | Ions | SRAM cells | soft errors | Field programmable gate arrays | Engineering, Electrical & Electronic | Engineering | Technology | Nuclear Science & Technology | Science & Technology | Energy transformation | Usage | Ionizing radiation | Heavy ions | Digital integrated circuits | Random access memory | Reports | Research | Static random access memory | Memory cells | Single Event Effects | Radiation | Data processing | Rotation | Linear energy transfer (LET) | Irradiation | Incidence angle | Energy transfer | Instrumentation and Detectors | Micro and nanotechnologies | Microelectronics | Engineering Sciences | Physics
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5. Full Text Impact of Scaling on Neutron-Induced Soft Error in SRAMs From a 250 nm to a 22 nm Design Rule
by Ibe, Eishi and Taniguchi, Hitoshi and Yahagi, Yasuo and Shimbo, Ken-ichi and Toba, Tadanobu
IEEE transactions on electron devices, ISSN 0018-9383, 07/2010, Volume 57, Issue 7, pp. 1527 - 1538
Protons | scaling | multi-cell upset (MCU) | Random access memory | Neutrons | Ions | static random access memories (SRAMs) | Bit multiplicity | single event upset (SEU) | cosmic ray impact simulator (CORIMS) | Layout | Silicon | multi-node upset (MNU) | Numerical models | Engineering | Physical Sciences | Technology | Engineering, Electrical & Electronic | Physics | Science & Technology | Physics, Applied | Monte Carlo method | Usage | Scalability | Analysis | Design and construction | Simulation methods | Monte Carlo methods | Accelerators | Simulation | Soft errors | Field tests | Spreads | Devices | Nuclear reactions
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6. Full Text A fault tolerant architecture to avoid the effects of Single Event Upset (SEU) in avionics applications
by Ciani, Lorenzo and Catelani, Marcantonio
Measurement : journal of the International Measurement Confederation, ISSN 0263-2241, 08/2014, Volume 54, pp. 256 - 263
Fault tolerant techniques | Field Programmable Gate Array (FPGA) | Avionics device | Diagnostic system | Reliability | Single Event Upset (SEU) | Engineering | Technology | Engineering, Multidisciplinary | Instruments & Instrumentation | Science & Technology | Nuclear radiation | Avionics industry
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7. Single event phenomena
by Messenger, George C and Ash, Milton S
1997, ISBN 0412097311, xvii, 351
Cosmic rays
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8. Full Text Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM
by Heidel, D.F and Marshall, P.W and Pellish, J.A and Rodbell, K.P and LaBel, K.A and Schwank, J.R and Rauch, S.E and Hakey, M.C and Berg, M.D and Castaneda, C.M and Dodd, P.E and Friendlich, M.R and Phan, A.D and Seidleck, C.M and Shaneyfelt, M.R and Xapsos, M.A
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2009, Volume 56, Issue 6, pp. 3499 - 3504
Protons | single event upset | Circuits | NASA | Random access memory | Pulse width modulation | SRAM | Silicon on insulator technology | Space technology | Life estimation | Proton irradiation | CMOS technology | Error correction codes | Single event upset | Static random access memory | Electric properties | Testing | Accelerated tests | Error correcting codes | Orientation | Position (location) | Cross sections
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9. Full Text Flip-flops soft error rate evaluation approach considering internal single-event transient
by SONG RuiQiang CHEN ShuMing HE YiBai DU YanKang
Science China. Information sciences, ISSN 1674-733X, 2015, Volume 58, Issue 6, pp. 155 - 166
单事件 | 评价方法 | 评估方法 | 软错误率 | 内部设置 | 触发器 | 蒙特卡罗模拟 | 062403 | single-event upset | Monte Carlo | Computer Science | Information Systems and Communication Service | soft error rate | internal SET | flip-flops | Computer Science, Information Systems | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology | Approximation | Computer simulation | Soft errors | China | Chip formation | Mathematical models | Cross sections | Flip-flops
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10. Full Text The Effects of Neutron Energy and High-Z Materials on Single Event Upsets and Multiple Cell Upsets
by Clemens, M. A and Sierawski, B. D and Warren, K. M and Mendenhall, M. H and Dodds, N. A and Weller, R. A and Reed, R. A and Dodd, P. E and Shaneyfelt, M. R and Schwank, J. R and Wender, S. A and Baumann, R. C
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2011, Volume 58, Issue 6, pp. 2591 - 2598
neutron radiation effects | single event mechanism | Single event upset | Computer simulation | Neutrons | energy deposition | Monte Carlo methods | Charge collection | SRAM chips | multiple bit upsets | GEANT4 | Data models | nuclear reactions | Monte Carlo simulation | computer simulation | Electric charge and distribution | Electromagnetic waves | Electric waves | Electromagnetic radiation | Research | Properties | Static random access memory | Single event upsets | Charge | Collection | Devices | Charge materials | Energy (nuclear)
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11. Full Text Bias Dependence of Single-Event Upsets in 16 nm FinFET D-Flip-Flops
by Narasimham, Balaji and Hatami, Safar and Anvar, Ali and Harris, David M and Lin, Alvin and Wang, Jung K and Chatterjee, Indranil and Ni, Kai and Bhuva, Bharat L and Schrimpf, Ronald D and Reed, Robert A and McCurdy, Mike W
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2015, Volume 62, Issue 6, pp. 2578 - 2584
Protons | SER | finFET | single event | Single event upsets | soft error | Alpha particles | Neutrons | Flip-flops | FinFETs | latch | flip-flop | heavy-ions | protons | neutrons | Electric properties
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12. Full Text Physics of Multiple-Node Charge Collection and Impacts on Single-Event Characterization and Soft Error Rate Prediction
by Black, J. D and Dodd, P. E and Warren, K. M
IEEE transactions on nuclear science, ISSN 0018-9499, 06/2013, Volume 60, Issue 3, pp. 1836 - 1851
Charge sharing | multiple cell upset | SRAM cells | Silicon | single-event testing | Transistors | Photoconductivity | technology computer-aided design | Junctions | Integrated circuit modeling | multiple bit upset | multiple-node charge collection | Engineering, Electrical & Electronic | Engineering | Technology | Nuclear Science & Technology | Science & Technology
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13. Full Text Single event upset investigations on the “Flying Laptop” satellite mission
by Noeldeke, Christoph and Boettcher, Maximilian and Mohr, Ulrich and Gaisser, Steffen and Alvarez Rua, Mikel and Eickhoff, Jens and Leslie, Mike and Von Thun, Matt and Klinkner, Sabine and Varatharajoo, Renuganth
Advances in space research, ISSN 0273-1177, 03/2021, Volume 67, Issue 6, pp. 2000 - 2009
EDAC | “Flying Laptop” satellite | LEO radiation | Single Event Upsets (SEUs) | SRAM | Artificial satellites | Memory (Computers) | Analysis | Investigations | Radiation
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14. Full Text Low-cost single event double-upset tolerant latch design
by Jiang, Jianwei and Xu, Yiran and Ren, Jiangchuan and Zhu, Wenyi and Lin, Dianpeng and Xiao, Jun and Kong, Weiran and Zou, Shichang
Electronics letters, ISSN 0013-5194, 5/2018, Volume 54, Issue 9, pp. 554 - 556
Circuits and systems | flip‐flops | Muller C‐element | up‐to‐date single event double‐upset tolerant latches | soft error | area‐power‐delay product | radiation hardening (electronics) | up‐to‐date SEDU tolerant latch | clock gating | low‐cost single event double‐upset tolerant latch design | logic design | Engineering, Electrical & Electronic | Engineering | Technology | Science & Technology
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15. Full Text Electron-Induced Single-Event Upsets in Static Random Access Memory
by King, M. P and Reed, R. A and Weller, R. A and Mendenhall, M. H and Schrimpf, R. D and Sierawski, B. D and Sternberg, A. L and Narasimham, B and Wang, J. K and Pitta, E and Bartz, B and Reed, D and Monzel, C and Baumann, R. C and Deng, X and Pellish, J. A and Berg, M. D and Seidleck, C. M and Auden, E. C and Weeden-Wright, S. L and Gaspard, N. J and Zhang, C. X and Fleetwood, D. M
IEEE transactions on nuclear science, ISSN 0018-9499, 12/2013, Volume 60, Issue 6, pp. 4122 - 4129
Protons | Radiation effects | Energetic electron | single-event effects (SEEs) | Error analysis | Mesons | static random access memory (SRAM) | SRAM chips | error rate | Random access memory | Single event upsets | single-event upset (SEU) | CMOS | Errors | Photocurrent | Computer simulation | X-rays | Voltage | Charge | Deposition
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16. Full Text Radiation-Hardened 0.3-0.9-V Voltage-Scalable 14T SRAM and Peripheral Circuit in 28-nm Technology for Space Applications
by Han, Yuanyuan and Cheng, Xu and Han, Jun and Zeng, Xiaoyang
IEEE transactions on very large scale integration (VLSI) systems, ISSN 1063-8210, 04/2020, Volume 28, Issue 4, pp. 1089 - 1093
peripheral circuits | static random access memory (SRAM) | Single event upsets | SRAM cells | low supply voltage | Decoding | Error correction codes | Transistors | Decoder | Transient analysis | single-event upset (SEU) | Engineering, Electrical & Electronic | Engineering | Computer Science, Hardware & Architecture | Technology | Computer Science | Science & Technology
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17. Full Text Physical Mechanisms Inducing Electron Single-Event Upset
by Caron, P and Inguimbert, C and Artola, L and Chatry, N and Sukhaseum, N and Ecoffet, R and Bezerra, F
IEEE transactions on nuclear science, ISSN 0018-9499, 08/2018, Volume 65, Issue 8, pp. 1759 - 1767
field programmable gate array (FPGA) static random access memory (SRAM) based | Sensitivity | SEE | Bremsstrahlung | Scattering | Single event upsets | Electron | Silicon | Photonics | single-event upset (SEU) | Static random access memory | Random access memory | Field programmable gate arrays | Engineering Sciences | Physics
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18.