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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, 09/2019, p. 162794
Journal Article
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, 10/2019, p. 162850
Journal Article
Superlattices and Microstructures, ISSN 0749-6036, 11/2017, Volume 111, pp. 1233 - 1243
The performance of the planar junctionless devices is improved using corrugated substrate also known as SegFET device. Bulk and SOI based planar junctionless... 
TCAD and fT | VSTI | BPJL SegFET | SOIJL SegFET | TCAD and f | FIELD-EFFECT TRANSISTOR | PHYSICS, CONDENSED MATTER | DESIGN | SILICON | TCAD and f(T) | Usage | Analysis | Numerical analysis
Journal Article
Solid State Electronics, ISSN 0038-1101, 10/2017, Volume 136, pp. 75 - 80
In this work, new design strategies for 10 nm node NMOS bulk FinFET transistors are investigated to meet low power (LP) (20 pA/μm < I < 50 pA/μm) and ultralow... 
3D TCAD | FinFET | GIDL | Ultra-low power
Journal Article
IEEE Transactions on Terahertz Science and Technology, ISSN 2156-342X, 11/2019, pp. 1 - 1
Technology computer-aided design (TCAD) models for AlGaAs/InGaAs and AlGaN/GaN and silicon SOI TeraFETs are in good agreement with the measured current-voltage... 
MOSFET | modeling | terahertz detection | HFET | TCAD | TeraFET
Journal Article
2019, ISBN 3039210106
What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power... 
MOSFET | n/a | total ionizing dose (TID) | low power consumption | process simulation | two-dimensional material | negative-capacitance | power consumption | technology computer aided design (TCAD) | thin-film transistors (TFTs) | band-to-band tunneling (BTBT) | nanowires | inversion channel | metal oxide semiconductor field effect transistor (MOSFET) | spike-timing-dependent plasticity (STDP) | field effect transistor | segregation | systematic variations | Sentaurus TCAD | indium selenide | nanosheets | technology computer-aided design (TCAD) | high-? dielectric | subthreshold bias range | statistical variations | fin field effect transistor (FinFET) | compact models | non-equilibrium Green’s function | etching simulation | highly miniaturized transistor structure | compact model | silicon nanowire | surface potential | Silicon-Germanium source/drain (SiGe S/D) | nanowire | plasma-aided molecular beam epitaxy (MBE) | phonon scattering | mobility | silicon-on-insulator | drain engineered | device simulation | variability | semi-floating gate | synaptic transistor | neuromorphic system | theoretical model | CMOS | ferroelectrics | tunnel field-effect transistor (TFET) | SiGe | metal gate granularity | buried channel | ON-state | bulk NMOS devices | ambipolar | piezoelectrics | tunnel field effect transistor (TFET) | FinFETs | polarization | field-effect transistor | line edge roughness | random discrete dopants | radiation hardened by design (RHBD) | low energy | flux calculation | doping incorporation | low voltage | topography simulation | MOS devices | low-frequency noise | high-k | layout | level set | process variations | subthreshold | metal gate stack | electrostatic discharge (ESD)
eBook
Nuclear Inst. and Methods in Physics Research, A, ISSN 0168-9002, 09/2016, Volume 831, pp. 99 - 104
The proposed Circular Electron Positron Collider (CEPC) will be primarily aimed for precision measurements of the discovered Higgs boson. Its innermost vertex... 
Charge collection | TCAD simulation | CEPC vertex detector | Radiation damage | CPS
Journal Article
IEEE ELECTRON DEVICE LETTERS, ISSN 0741-3106, 08/2017, Volume 38, Issue 8, pp. 1035 - 1038
We report the effect of repeated tensile bending on the performance of amorphous indium-galliumzinc oxide (a-IGZO) thin-film transistors (TFTs) on 15-mu m... 
a-IGZOTFTs | PI substrate | INSTABILITY | TCAD | tensile bending | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Journal of Low Power Electronics and Applications, ISSN 2079-9268, 09/2019, Volume 9, Issue 4, p. 29
Low power consumption has become one of the major requirements for most microelectronic devices and systems. Increasing power dissipation may lead to... 
CMOS | SELBOX | SOI | TCAD | kink effect
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 11/2019, Volume 66, Issue 12, pp. 1 - 8
This article presents device design insights and design challenges for drain-extended FinFET devices with embedded silicon-controlled rectifier (SCR)... 
silicon-controlled rectifier (SCR) | technology computer-aided design (TCAD) | Drain-extended FinFET (DeFinFET) | electrostatic discharge (ESD)
Journal Article
Key Engineering Materials, ISSN 1013-9826, 05/2015, Volume 645-646, pp. 70 - 74
An embedded SiGe layer was applied in the source/drain areas (S/D) of a field-effect transistor to boost the performance in the p channels. Raised SiGe S/D... 
Strain engineering | SiGe | TCAD simulation
Journal Article
Nanotechnology, ISSN 0957-4484, 01/2019, Volume 30, Issue 3, p. 035205
Thyristor random access memory without a capacitor has been highlighted for its significant potential to replace current dynamic random access memory. We... 
wet etching | TCAD simulatio | capacitorless DRAM | thyristor memory | PHYSICS, APPLIED | TCAD simulation | OPERATION | MATERIALS SCIENCE, MULTIDISCIPLINARY | SILICON | CAPACITORLESS 1T-DRAM | NANOSCIENCE & NANOTECHNOLOGY | LOW-POWER | RAM
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 02/2019, Volume 66, Issue 2, pp. 1118 - 1122
Journal Article
International Journal of Power Electronics and Drive Systems, ISSN 2088-8694, 03/2019, Volume 10, Issue 1, pp. 398 - 405
Journal Article
Optik, ISSN 0030-4026, 11/2019, p. 163715
Journal Article
2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), 09/2019, pp. 1 - 4
In this work, we present a unique approach of combining TCAD modelling and machine learning to detect the defect locations of a bridging defect in a single-fin... 
Defect Location Prediction | TCAD | FinFET | Machine Learning
Conference Proceeding
IEEE Transactions on Nuclear Science, ISSN 0018-9499, 08/2007, Volume 54, Issue 4, pp. 898 - 903
Journal Article
IEEE Electron Device Letters, ISSN 0741-3106, 03/2014, Volume 35, Issue 3, pp. 411 - 413
In this letter, we report for the first time a distinctive approach of implementing a junctionless transistor (JLT) without doping (doping-less) the ultrathin... 
Metals | simulation | Doping | variability | random dopant fluctuation (RDF) | Charge-plasma | TCAD | Logic gates | Silicon | Semiconductor process modeling | sensitivity | Transistors | doping-less | NANOWIRE TRANSISTORS | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
IEEE Transactions on Electron Devices, ISSN 0018-9383, 01/2017, Volume 64, Issue 1, pp. 325 - 328
Temperature variation during semiconductor device operation can be significant and how this affects contact resistance is investigated. This paper reports... 
Thyristors | Analytical models | technology computer–aided design (TCAD) | Ohmic contact | specific contact resistance (SCR) | Doping | Contact resistance | Iron | Silicon | Schottky barrier | technology computer-aided design (TCAD) | PHYSICS, APPLIED | THERMIONIC EMISSION | RICHARDSON CONSTANT | SILICON | DIODES | MODEL | BAND-GAP | ENGINEERING, ELECTRICAL & ELECTRONIC
Journal Article
Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, ISSN 0168-9002, 2019
Its radiation resilience has established p-type silicon as tracking detector baseline material in upcoming high-luminosity physics experiments. Electric... 
MOSFET | p-stop | TCAD simulations | Inter-strip resistance | Silicon microstrip sensors | Strip isolation
Journal Article
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